Abstract: A semiconductor device includes a substrate, a first stack of semiconductor nanosheets, a second stack of semiconductor nanosheets, a gate structure and a first dielectric wall. The substrate includes a first fin and a second fin. The first stack of semiconductor nanosheets is disposed on the first fin. The second stack of semiconductor nanosheets is disposed on the second fin. The gate structure wraps the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall is disposed between the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall includes at least one neck portion between adjacent two semiconductor nanosheets of the first stack.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A vaporizer device includes various modular components. The vaporizer device includes a first subassembly. The first subassembly includes a cartridge connector that secures a vaporizer cartridge to the vaporizer device and includes at least two receptacle contacts that electrically communicate with the vaporizer cartridge. The vaporizer device includes a second subassembly. The second subassembly includes a skeleton defining a rigid tray that retains at least a power source. The vaporizer device also includes a third subassembly. The third subassembly includes a plurality of charging contacts that supply power to the power source, and an end cap that encloses an end of the vaporizer device.

Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.

Abstract: A magnetic component includes a core, a winding, a lead frame and a conductive material. The winding is disposed in the core. A winding end of the winding extends to an outer periphery of the core. The lead frame is disposed on the outer periphery of the core. At least one hole is formed on the lead frame and corresponds to the winding end. The conductive material is disposed in the at least one hole. The conductive material is in contact with the winding end.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: A computer system (such as a controller) that selects channels and/or channel widths for use during communication in a shared band of frequencies is described. During operation, the computer system may receive, associated with access points in a region (such as a zone), information specifying unavailable channels associated with the shared band of frequencies, where the unavailable channels are currently used by the access points. For example, the information may be included in access-point status reports from the access points. Then, based at least in part on the unavailable channels, the computer system may determine the channels and/or the channel widths for use by the access points during communication in the shared band of frequencies in the region. Next, the computer system may provide, addressed to the access points, second information specifying the determined channels and/or the channel width.

Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A voltage tracking circuit is provided. The voltage tracking circuit includes first and second P-type transistors and a control circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The gate and the drain of the second P-type transistor are respectively coupled to the first voltage terminal and a second voltage terminal. The control circuit is coupled to the first and second voltage terminals and generates a control voltage according to the first voltage and the second voltage. The sources of the first and second P-type transistors are coupled to an output terminal of the voltage tracking circuit, and the output voltage is generated at the output terminal. In response to the second voltage being higher than the first voltage, the control circuit generates the control signal to turn off the first P-type transistor.

Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: A marking method on image combined with sound signal, a terminal apparatus, and a server are provided. In the method, a first image is displayed. A selection command is detected. A target sound signal is embedded into a speech signal so as to generate a combined sound signal. The combined sound signal is transmitted. The selection command corresponds to a target region in the first image, and the selection command is generated selecting the target region through an input operation. The target sound signal corresponds to the target region of the selection command, and the speech signal is obtained by receiving sound. Accordingly, all attendants in the video conference are able to make makings on a shared screen.

Abstract: An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate.

Abstract: A method includes forming a source/drain region in a semiconductor fin; after forming the source/drain region, implanting first impurities into the source/drain region; and after implanting the first impurities, implanting second impurities into the source/drain region. The first impurities have a lower formation enthalpy than the second impurities. The method further includes after implanting the second impurities, annealing the source/drain region.

Abstract: An example method includes detecting, using sensors, packets throughout a datacenter. The sensors can then send packet logs to various collectors which can then identify and summarize data flows in the datacenter. The collectors can then send flow logs to an analytics module which can identify the status of the datacenter and detect an attack.

Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: A wearable device and a method for performing a registration process in the wearable device are provided. The wearable device includes a light source, a light sensor and a microcontroller that performs the method. In the method, the light source is activated to emit a detection light and the light sensor senses a reflected light. A light intensity of the reflected light is calculated. Specifically, an upper limit and a lower limit are referred to for detecting whether the wearable device is properly worn by a person. For example, since the wearable device can be worn on the person's wrist, the registration value is used to detect whether the wearable device is away from the wrist.

Abstract: A chip packaging structure and a chip packaging method are provided. The chip packaging structure includes a first substrate, an image sensing chip, a supporting member, a second substrate, and an encapsulant. The image sensing chip is disposed on an upper surface of the first substrate, and the image sensing chip has an image sensing region. The supporting member is disposed on an upper surface of the image sensing chip and surrounds the image sensing region. The supporting member is formed by stacking microstructures with each other, so that the supporting member has pores. The second substrate is disposed on an upper surface of the supporting member, and the second substrate, the supporting member, and the image sensing chip define an air cavity. The encapsulant is attached to the upper surface of the first substrate and a side surface of the second substrate and filled into the pores.

Abstract: A system including a processor configured to perform generating a plurality of different layout blocks; selecting, among the plurality of layout blocks, layout blocks corresponding to a plurality of blocks in a floorplan of a circuit; combining the selected layout blocks in accordance with the floorplan into a layout of the circuit; and storing the layout of the circuit in a cell library or using the layout of the circuit to generate a layout for an integrated circuit (IC) containing the circuit. Each of the plurality of layout blocks satisfies predetermined design rules and includes at least one of a plurality of different first block options associated with a first layout feature, and at least one of a plurality of different second block options associated with a second layout feature different from the first layout feature.