Abstract: A processor circuit sends a read request. A clock signal of the processor circuit corresponds to a first counting value. A memory circuit stores data and sends a data strobe signal in response to the read request. The data strobe signal corresponds to a second counting value. The processor circuit includes a selector circuit and a feedback circuit. The selector circuit selects and outputs a flag signal from a plurality of flag control signals according to the second counting value. The feedback circuit generates an enable signal according to a set signal associated with the first counting value, the flag signal associated with the second counting value, and a data strobe gate signal, and generates the data strobe gate signal according to the enable signal and the data strobe signal. The processor circuit reads the data according to the data strobe gate signal.

Abstract: A test method for a delay circuit and a test circuitry are provided. The test circuitry incudes the delay circuit that essentially includes multiple serially connected logic gates, a clock pulse generator at an input end of the delay circuit for generating one or more cycles of clock signals, and a counter at an output end of the delay circuit for counting the clock signals passing through the delay circuit. The test circuitry implements a test mode by switching lines to the clock pulse generator and the counter. The test circuitry relies on a comparison result of a counting result made by the counter and a number of the cycles of the clock signals to test any failure of the delay circuit.

Abstract: The embodiments of the disclosure provide a patterning method, which includes the following processes. A target layer is formed on a substrate. A hard mask layer is formed over the target layer. A first patterning process is performed on the hard mask layer by using a photomask having a first pattern with a first pitch. The photomask is shifted along a first direction by a first distance. A second patterning process is performed on the hard mask layer by using the photomask that has been shifted, so as to form a patterned hard mask. The target layer is patterned using the patterned hard mask to form a patterned target layer. The target layer has a second pattern with a second pitch less than the first pitch.

Abstract: A detection circuit and a detection method are provided. The detection circuit is suitable for a system-on-chip (SoC). The SoC is coupled to an alarm pin of a DDR4 memory through a connection pad, and the detection circuit includes a control circuit coupled to the connection pad. In response to the DDR4 memory performing a refresh process or a specific event occurring, the control circuit outputs a test signal with a first voltage level to the connection pad, and determines whether a voltage level of the connection pad is tied to a second voltage level. In response to determining that the voltage level of the connection pad is tied to the second voltage level, the control circuit outputs an interrupt signal to a CPU of the SoC, and the interrupt signal indicates that the alarm pin of the DDR4 memory is not controlled normally by the DDR4 memory.

Abstract: A method of foreground auto-calibrating data reception window for a DRAM system is disclosed. The method comprises receiving data strobe and data from a DRAM of the DARM system, capturing a data strobe clock according to the received data strobe, generating three time points with a period of the data strobe clock, sampling the data at the three time points, to obtain three sampled data, determining whether to adjust positions of the three time points according to a comparison among the three sampled data, and configuring the valid data reception window according to the positions of the three time points when determining not to adjust the positions of the three time points.

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

Abstract: The present disclosure discloses a memory access interface device. The clock generation circuit thereof generates reference clocks. Each of the DDR access signal transmission circuits thereof, under a DDR mode, adjusts a phase and a duty cycle of one of DDR access signals according to one of DDR reference clock signals to generate one of output access signals to access the memory device. The data signal transmission circuit thereof, under an SDR mode, applies a minimum latency on an SDR data signal according to the command and address reference clock signal to generate an output SDR data signal to access the memory device. The command and address signal transmission circuit thereof, under either the DDR or SDR mode, applies a programmable latency on a command and address signal according to the command and address reference clock signal to generate an output command and address signal to access the memory device.

Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates a command reference clock signal. Each of the access signal transmission circuits adjusts a phase and a duty cycle of one of access signals from a memory access controller according to the command reference clock signal to generate one of output access signal including an output external read enable signal to activate a memory device and an output internal read enable signal. The data reading circuit samples a data signal from the activated memory device according to a sampling signal to generate and transmit a read data signal to the memory access controller. The multiplexer generates the sampling signal according to the output internal read enable signal under a SDR mode and generates the sampling signal according to a data strobe signal from the activated memory device under a DDR mode.

Abstract: Disclosed is a DDR SDRAM signal calibration device capable to adapting to the variation of voltage and/or temperature. The device includes: an enablement signal setting circuit configured to generate data strobe (DQS) enablement setting; a signal pad configured to output a DQS signal; a signal gating circuit configured to generate a DQS enablement setting signal and a DQS enablement signal according to the DQS enablement setting and then output a gated DQS signal according to the DQS enablement signal and the DQS signal; and a calibration circuit configured to output a calibration signal according to the DQS enablement setting signal and at least one of the DQS enablement signal and the DQS signal so that the enablement signal setting circuit can maintain or adjust the DQS enablement setting according to the calibration signal.

Abstract: A method of forming gates includes the following steps. Dummy gates are formed on a substrate. A spacer material is deposited to conformally cover the dummy gates. A removing process is performed to remove parts of the spacer material and the dummy gates, thereby forming spacers and recesses in the spacers.

Abstract: A memory controller comprising: a delay circuit, configured to use a first delay value and a second delay value to respectively delay a sampling clock signal to generate a first and a second delayed sampling clock signal; a sampling circuit, configured to use a first edge of the first delayed sampling clock signal to sample a data signal to generate a first sampling value, and configured to use a second edge of the second delayed sampling clock signal to sample the data signal to generate a second sampling value; and a calibrating circuit, configured to generate a sampling delay value according to the first delay value based on the first sampling value and the second sampling value. The delay circuit uses the sampling delay value to generate an adjusted sampling clock signal and the sampling circuit sample the data signal by the adjusted sampling clock signal.

Abstract: A method of foreground auto-calibrating data reception window for a DRAM system is disclosed. The method comprises receiving data strobe and data from a DRAM of the DARM system, capturing a data strobe clock according to the received data strobe, generating three time points with a period of the data strobe clock, sampling the data at the three time points, to obtain three sampled data, determining whether to adjust positions of the three time points according to a comparison among the three sampled data, and configuring the valid data reception window according to the positions of the three time points when determining not to adjust the positions of the three time points.

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

Abstract: A method of forming gates includes the following steps. Dummy gates are formed on a substrate. A spacer material is deposited to conformally cover the dummy gates. A removing process is performed to remove parts of the spacer material and the dummy gates, thereby forming spacers and recesses in the spacers.

Abstract: A memory access interface device that includes a clock generation circuit that generates reference clock signals according to a source clock signal and access signal transmission circuits are provided. Each of the access signal transmission circuits includes a first and a second clock frequency division circuits, a phase adjusting circuit and a duty cycle adjusting circuit. The first and the second clock frequency division circuits sequentially divide the frequency of one of the reference clock signals to generate a first and a second frequency divided clock signals respectively. The phase adjusting circuit adjusts the phase of an access signal according to the second frequency divided clock signal to generate a phase-adjusted access signal. The duty cycle adjusting circuit adjusts the duty cycle of the phase-adjusted access signal to be a half of the time period to generate an output access signal to access a memory device.

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

Abstract: Disclosed is a DDR SDRAM physical layer interface circuit including: a multiphase clock generator generating a plurality of clocks including a reference clock, a first clock, a second clock and a third clock; a frequency dividing circuit generating a PHY clock according to the first clock; a clock output path outputting the reference clock to a storage circuit; a first output circuit outputting a first output signal to the storage circuit according to a first input signal of a memory controller, the first clock and the PHY clock; a second output circuit outputting a second output signal to the storage circuit according to a second input signal of the memory controller, the second clock and the PHY clock; and a third output circuit outputting a third output signal to the storage circuit according to a third input signal of the memory controller, the third clock and the PHY clock.

Abstract: Disclosed is a DDR SDRAM physical layer interface circuit including: a multiphase clock generator generating a plurality of clocks including a reference clock, a first clock, a second clock and a third clock; a frequency dividing circuit generating a PHY clock according to the first clock; a clock output path outputting the reference clock to a storage circuit; a first output circuit outputting a first output signal to the storage circuit according to a first input signal of a memory controller, the first clock and the PHY clock; a second output circuit outputting a second output signal to the storage circuit according to a second input signal of the memory controller, the second clock and the PHY clock; and a third output circuit outputting a third output signal to the storage circuit according to a third input signal of the memory controller, the third clock and the PHY clock.

Abstract: The present disclosure provides a memory control circuit configured to precede a data-reading process with a memory. For the data-reading process, the memory transmits a DQ and a DQS indicating a time to read the DQ. The DQS includes a preamble. The memory control circuit includes a control circuit and a sampling circuit. The control circuit is configured to generate an enabling signal. The sampling circuit coupled to the control circuit is configured to sample the DQS based on the enabling signal in order to determine a sampling level. The control circuit determines whether the sampling level matches a signal level of the preamble or not.