Abstract: A liquid cooled heat sink has a thermal conduction plate and a liquid cooling module. The liquid cooling module is attached securely to the thermal conduction plate and has a distribution tank, a collection tank and a pipe assembly. The pipe assembly has multiple pipes of at least two different gauges and each pipe has a pipe inlet and a pipe outlet respectively secured to the distribution tank and the collection tank. Since a sum of the gauges is increased and each pipe need not to be coiled, an extra strong pumping system is not needed and design complexity is reduced.

Abstract: An electrical energy storage system for maximizing the utilization of renewable energy. In the system an inverter connected to at least one battery module is integrated with a grid power source and home or office electrical devices. Additionally, a renewable energy source can be included in the system. A controller is used to control the components for reducing demands on the grid power source during peak demand periods and for maximizing the utilization of the renewable energy source connected to the system.

Abstract: A method for driving LCD backlight modules provides a constant operational current during a first predetermined period for adjusting the brightness of a backlight from a first brightness to a second brightness. After the brightness of the backlight reaches the second brightness, the method provides an impulse-type operational current during a second predetermined period for improving motion blur.

Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.

Abstract: A semiconductor cleaning method and apparatus and a controlling method of semiconductor cleaning are disclosed. The developing method includes the following steps. A developing solution is applied onto a wafer having a photoresist layer. Next, the wafer is rotated to scatter the developing solution over the photoresist layer. Then, a nozzle upon the center of the wafer ejects a non-reactive liquid onto the photoresist layer for a time period. Next, the nozzle is moved in a radial direction of the wafer to at least one next location and then ejects the liquid onto the photoresist layer for at least one next time period. The wafer is then rinsed until the developing solution and the unnecessary photoresist dissolved in the developing solution are washed away and a patterned photoresist layer is revealed.

Abstract: A rechargeable battery and a method of fabricating which includes stacking a plurality of electrode pages having an uncoated portion between portions coated with an active electrode material. The electrode pages are arranged in a stack and an overall current collector is connected at the uncoated portion in order to form an electrode booklet. The overall current collector maintains the arrangement of the electrode pages and electrically connects all of the uncoated portions of the electrode pages. A tilted stack of electrode pages is utilized when a large number of electrodes are desired to result in a battery cell having a vertical orientation.

Abstract: An electrical connector (1), which is adapted for mounting to a circuit board (5), has a mounting foot (21) with a top mounting surface (211), an elongated base portion (23) protruded outwardly from said top mounting surface (211) and fitting members (4) set on the top mounting surface (211). In assembly, the top mounting surface (211) is face to the back of the circuit board (5), and the whole mounting foot (21) is left below the circuit board (5), which can minimize the mounting profile of the connector (1) effectively.

Abstract: An liquid crystal display including a backlight module and an LCD panel is disclosed. The backlight module has a white light source, and the normalized optical spectrum of the backlight module is BL(?). The LCD panel includes a red color filter layer, a green color filter layer and a blue color filter layer. The green color filter layer and the backlight module are subject to the following relationship: E=C/D and E?0.8, wherein A is defined as the wavelength corresponding to the maximum peak value of CFGreen(?)×BL(?)×x(?); B is defined as the wavelength corresponding to the maximum peak value of CFGreen(?)×BL(?)×y(?); C is defined as the integral on CFGreen(?)×BL(?)×x(?) over the interval between A and B; D is defined as the integral on CFGreen(?)×BL(?)×y(?) over the interval larger than B, CFGreen(?) is the transmission spectrum of the green color filter layer; and x(?) and y(?) are color matching functions.

Abstract: An image sensor includes a semiconductor substrate, a guard ring structure in the substrate, and at least one pixel surrounded by the guard ring structure. The guard ring structure is implanted in the substrate by high-energy implantation.

Abstract: A method of making a transistor device having silicided source/drain is provided. A gate electrode is formed on a substrate with a gate dielectric layer therebetween. A spacer is formed on sidewalls of the gate electrode. A source/drain is implanted into the substrate. A pre-amorphization implant (PAI) is performed to form an amorphized layer on the source/drain. A post-PAI annealing process is performed to repair defects formed during the PAI process. A metal silicide layer is then formed from the amorphized layer.

Abstract: An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.

Abstract: A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.

Abstract: A rechargeable battery, battery set or battery pack having a circuit or a plurality of circuits for providing self-discharging thereof electrically connected in parallel are used to form rechargeable battery assemblies and electric power supply systems for use in electric and hybrid vehicles and the like.

Abstract: A rechargeable battery, battery set or battery pack having a circuit or a plurality of circuits for providing self-discharging thereof electrically connected in parallel are used to form rechargeable battery assemblies and electric power supply systems for use in electric and hybrid vehicles and the like.

Abstract: A high color expression display device and a method for manufacturing the same are provided. The display device includes a backlight module and a display panel for receiving light from the backlight module. The display panel has a color filter layer which consists of a plurality of color resists above the backlight module. Lights from the backlight module pass through the color resists and out of the display panel to form an output light. A NTSC saturation of the output light may be greater or smaller than 60%, and a CIE standard illuminant C test result of the color resists may correspondingly fall into different predetermined scopes to prevent color shift and maintain brightness of the display device.

Abstract: The present invention is a portable otoscope device that is mainly a single machine-operated structural design for convenient usage by users. It includes a grip styled main body with a protruding conical shape body set on the front end of its upper portion and a base portion set in the rear side, and it combines with a display panel. There is a control circuitry system set inside the main body that is including at least picture-taking and displaying mechanism. The protruding conical shape body is used to extend it into the patient's ears such that the images can be transferred to the display panel through the picture-taking mechanism. It then can provide a fast and simple surveillance and diagnosis, and it thus can obtain the practical advancement.

Abstract: A pixel structure including a gate, a gate dielectric layer, a patterned semiconductor layer having a channel area disposed above the gate, a patterned dielectric layer having an etching-stop layer disposed above the gate and a number of bumps, a patterned metal layer having a reflective pixel electrode, a source and a drain, an overcoat dielectric layer, and a transparent pixel electrode sequentially disposed on a substrate is provided. The source and the drain respectively cover portions of the channel area. The reflective pixel electrode connects the drain and covers the bumps to form an uneven surface. The overcoat dielectric layer disposed on a transistor constituted by the gate, the gate dielectric layer, the patterned semiconductor layer, the source and the drain has a contact opening exposing a portion of the reflective pixel electrode. The transparent pixel electrode is electrically connected to the reflective pixel electrode through the contact opening.

Abstract: A high color expression display device and a method for adjusting the displayed color are provided. The display device includes a backlight source, a transmittance adjusting layer, and a display panel for receiving light from the backlight source. The display panel has a color filter disposed above the backlight source. A CIE standard illuminant C test result of the color filter falls into a predetermined scope. In a transmittance spectrum of the transmittance adjusting layer, an average transmittance at wavelength shorter than 495 nm is smaller than that at wavelength greater than 570 nm.

Abstract: A display device and a color adjusting method are provided. The display device includes a backlight source and color resists disposed above the backlight source for filtering the light from the backlight source. An intensity spectrum of the backlight source has several segments which includes a first segment having a peak value existing at a wavelength between 515 nm and 535 nm. The color resists have a peak transmittance, which is smaller than 75%, existing at a wavelength between 520 nm and 540 nm. In addition, the transmittance of the color resists is smaller than 0.05% at the wavelength of 730 nm. Since the wavelength ranges in the range mentioned above are correlated, the color resists are capable of adjusting the light from the backlight source to enhance the color saturation.

Abstract: A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.