Abstract: A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.

Abstract: A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.

Abstract: The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.

Abstract: An alignment mark is fabricated containing a mark portion and a trench structure. The trench structure surrounds the mark portion and is at a distance from the mark portion. The mark portion has a plurality of notches. Due to the erosion effect caused by the trench structure, it can prevent the residue leave in the notches of the alignment mark.

Abstract: A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. The CMP process is performed to the test wafer to remove the to-be-polished layer until the material layer is exposed while the reflection of the test beam during the polish process is continuously detected. The reflection tendency is detected when the to-be-polished layer is to be completely removed and when the CMP process reaches the interface between the to-be-polished layer and the material layer. If the reflection tendency is gradually weakened, the test beam with the wavelength is chosen for the subsequent polish process.

Abstract: The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.

Abstract: A circuit and method for the display of a high frequency periodic signal on a display (21) having a maximum response frequency less than the periodic signal frequency includes a signal period counter (12) for counting the number of periods in the high frequency periodic signal, a sampling control counter (16) for counting at a frequency substantially greater than the frequency of the high frequency periodic signal, and a comparator (17) for comparing the counts in the signal period counter (12) and the sampling control counter (16) and indicating a match thereof. When a match count is indicated, some electrical parameter of the high frequency periodic signal is sampled and held by a sample and hold circuit (20) until the next match count is indicated, thereby accurately reproducing the high frequency periodic signal at another frequency in a range of frequencies from zero up to and including the maximum response frequencies of the display.

Abstract: Disclosed is an automatically tunable notch filter and method for suppression of acoustical feedback in an audio signal. The apparatus includes a selectively tunable notch filter having a center frequency which is variable over at least a substantial portion of the audio frequency spectrum. The apparatus receives an audio signal which is substantially non-periodic in the absence of acoustical feedback and substantially periodic with an instantaneous dominant frequency in the presence of the same. The duration of successive periods are monitored and compared by an up/down counter to determine whether the audio input signal is substantially periodic and to determine the instantaneous dominant frequency of such audio signal. Upon detection of an audio signal which is substantially periodic, the notch filter is tuned to the instantaneous dominant frequency so as to suppress the acoustical feedback.

Abstract: Disclosed is a digital control system and method for synchronizing audio-visual equipment for the presentation of film slides with corresponding sound narrations. As the film passes through conventional projecting equipment each slide receives a sequential address. Simultaneously, the sound narrations, passing through the audio equipment on a continuous media, receive identification numbers from a pulse generating means indicative of the outset of each narration, which numbers are stored in the system correlated with the proper sequential address. Means are further provided for skipping ahead or back to desired film slides rapidly, without loss of synchronization between the audio and visual portions of the program.