Abstract: A method of social key recovery for a first communication device supporting blockchain technology with asymmetric cryptographic algorithm is disclosed. The method comprises transmitting a device identity of the first communication to a second communication on the blockchain, performing a verification operation with the second communication device, receiving a message including a verification code of the first communication device and a public key of the second communication device, from the second communication device, wherein the first message is encrypted with a public key of the first communication device, decrypting the message with a private key of the first communication device, to obtain the public key of the second communication device, and transmitting seed phrases encrypted with the public key of the second communication device for restoring a crypto wallet on the blockchain, to the second communication device.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: The present invention provides a hardware setting device and hardware setting method thereof. The hardware setting device is configured to: boot an operating system; retrieve at least one hardware setting corresponding to a peripheral device from a pre-boot memory; and configure the peripheral device according to the at least one hardware setting.

Abstract: A semiconductor device includes a gate isolation structure on a shallow trench isolation (STI), a first epitaxial layer on one side of the gate isolation structure, a second epitaxial layer on another side of the gate isolation structure, first fin-shaped structures directly under the first epitaxial layer, and second fin-shaped structures directly under the second epitaxial layer, in which the STI surrounds the first fin-shaped structures and the second fin-shaped structures.

Abstract: A method for fabricating semiconductor device includes: forming a fin-shaped structure on a substrate, wherein the fin-shaped structure is extending along a first direction; forming a gate layer on the fin-shaped structure; removing part of the gate layer and part of the fin-shaped structure to form a first trench for dividing the fin-shaped structure into a first portion and a second portion, wherein the first trench is extending along a second direction; forming a patterned mask on the gate layer and into the first trench; removing part of the gate layer and part of the fin-shaped structure to form a second trench, wherein the second trench is extending along the first direction; and filling a dielectric layer in the first trench and the second trench.

Abstract: A data transceiver device and an operation method are provided. The data transceiver device receives input data and transmits output data. The data transceiver device includes a buffer circuit, a storage circuit, a timing circuit and a control circuit. The buffer circuit is configured to store input data. The storage circuit is configured to store the output data. The timing circuit is configured to generate a time-out signal according to the set time. The control circuit is configured to process the input data to generate the output data, to store the output data in the storage circuit, and to transmit the output data according to an output data threshold value and the time-out signal. The control circuit adjusts the set time and/or the output data threshold value based on an initial condition and the state of the buffer circuit.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: A method for fabricating semiconductor device includes: forming a fin-shaped structure on a substrate, wherein the fin-shaped structure is extending along a first direction; forming a gate layer on the fin-shaped structure; removing part of the gate layer and part of the fin-shaped structure to form a first trench for dividing the fin-shaped structure into a first portion and a second portion, wherein the first trench is extending along a second direction; forming a patterned mask on the gate layer and into the first trench; removing part of the gate layer and part of the fin-shaped structure to form a second trench, wherein the second trench is extending along the first direction; and filling a dielectric layer in the first trench and the second trench.

Abstract: A method for fabricating semiconductor device includes: forming a fin-shaped structure on a substrate, wherein the fin-shaped structure is extending along a first direction; forming a gate layer on the fin-shaped structure; removing part of the gate layer and part of the fin-shaped structure to form a first trench for dividing the fin-shaped structure into a first portion and a second portion, wherein the first trench is extending along a second direction; forming a patterned mask on the gate layer and into the first trench; removing part of the gate layer and part of the fin-shaped structure to form a second trench, wherein the second trench is extending along the first direction; and filling a dielectric layer in the first trench and the second trench.

Abstract: The present invention provides an image based blood pressure monitoring method, comprising: acquiring at least a human image information of at least a human skin area; according to the human image information to locate at least a ROI; extracting the human image information of the ROI, and calculate; filtering the average value of the human image information; monitoring the filtered signal; calculating an image pulse transmit time of the filtered signal, and calculating an inter-beat interval of the filtered signal; and employ the specific prediction model, to calculate a systolic pressure value and a diastolic pressure value.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first gate structure on the first region and a second gate structure on the second region; forming a first spacer around the first gate structure; forming a first epitaxial layer adjacent to two sides of the first spacer; forming a buffer layer on the first gate structure; and forming a contact etch stop layer (CESL) on the buffer layer on the first region and the second gate structure on the second region.

Abstract: A docking device includes a bus interface and a network interface controller. The bus interface is configured to be connected to a host device. The network interface controller is coupled to the bus interface and configured to receive a host-based MAC address of the host device and load the host-based MAC address for a network communication, if the host device is connected to the docking device via the bus interface. The host-based MAC address is stored in a table with a vendor specific format structure in a BIOS of the host device.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.

Abstract: A method of social key recovery for a first communication device supporting blockchain technology with asymmetric cryptographic algorithm is disclosed. The method comprises transmitting a device identity of the first communication to a second communication on the blockchain, performing a verification operation with the second communication device, receiving a message including a verification code of the first communication device and a public key of the second communication device, from the second communication device, wherein the first message is encrypted with a public key of the first communication device, decrypting the message with a private key of the first communication device, to obtain the public key of the second communication device, and transmitting seed phrases encrypted with the public key of the second communication device for restoring a crypto wallet on the blockchain, to the second communication device.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.

Abstract: A data packet processing method comprises: receiving data packet including a key message; analyzing the key message; determining whether the data packet is a high priority data packet or a normal data packet according to a result of analyzing the first key message of the data packet; and executing an Rx high priority interrupt in response to determining that the data packet is the high priority data packet. The Rx high priority interrupt is to immediately transmit an interrupt signal to interrupt receiving of the data packets.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a first gate structure and a second gate structure on the fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; removing the second gate structure and part of the fin-shaped structure to forma first trench; forming a dielectric layer into the first trench; and planarizing part of the dielectric layer to form a single diffusion break (SDB) structure. Preferably, the top surfaces of the SDB structure and the first gate structure are coplanar.