Abstract: A data packet processing method comprises: receiving data packet including a key message; analyzing the key message; determining whether the data packet is a high priority data packet or a normal data packet according to a result of analyzing the first key message of the data packet; and executing an Rx high priority interrupt in response to determining that the data packet is the high priority data packet. The Rx high priority interrupt is to immediately transmit an interrupt signal to interrupt receiving of the data packets.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first buffer layer on the first fin-shaped structure and the second fin-shaped structure; removing the first buffer layer on the first region; and performing a curing process so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure.

Abstract: A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure; a first oxide layer on the first fin-shaped structure; a second oxide layer on and directly contacting the first oxide layer and the STI; and a third oxide layer on the second fin-shaped structure, wherein a thickness of the third oxide layer is less than a thickness of the first oxide layer.

Abstract: The present invention provides an image based blood pressure monitoring method, comprising: acquiring at least a human image information of at least a human skin area; according to the human image information to locate at least a ROI; extracting the human image information of the ROI, and calculate; filtering the average value of the human image information; monitoring the filtered signal; calculating an image pulse transmit time of the filtered signal, and calculating an inter-beat interval of the filtered signal; and employ the specific prediction model, to calculate a systolic pressure value and a diastolic pressure value.

Abstract: A tunnel field effect transistor (TFET) includes: a first gate structure on a substrate; a source region having a first conductive type on one side of the first gate structure; a drain region having a second conductive type on another side of the first gate structure; a first isolation structure adjacent to the source region; and a second isolation structure adjacent to the drain region. Preferably, the first isolation and the second isolation comprise different material and different depths or same material and different depths.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A barrier layer is formed in a first region and a second region of a semiconductor substrate. The barrier layer formed in the first region is thinned before a step of forming a first work function layer on the barrier layer. The first work function layer formed on the first region is then removed. The process of thinning the barrier layer in the first region and the process of removing the first work function layer in the first region are performed separately for ensuring the coverage of the first work function layer in the second region. The electrical performance of the semiconductor device and the uniformity of the electrical performance of the semiconductor device may be improved accordingly.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first gate structure on the first region and a second gate structure on the second region; forming a first spacer around the first gate structure; forming a first epitaxial layer adjacent to two sides of the first spacer; forming a buffer layer on the first gate structure; and forming a contact etch stop layer (CESL) on the buffer layer on the first region and the second gate structure on the second region.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first buffer layer on the first fin-shaped structure and the second fin-shaped structure; removing the first buffer layer on the first region; and performing a curing process so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure.

Abstract: A recording device includes a camera component, a temperature sensor, and a processing component. The camera component is configured to capture a video to generate video data. The temperature sensor is configured to detect an operating temperature of the recording device. The processing component is configured to process the video data, and to enable the camera component to dynamically adjust at least one of a data rate of the video data and a frame rate of the video data according to the operating temperature during the camera component captures the video.

Abstract: A tunnel field effect transistor (TFET) includes: a first gate structure on a substrate; a source region having a first conductive type on one side of the first gate structure; a drain region having a second conductive type on another side of the first gate structure; a first isolation structure adjacent to the source region; and a second isolation structure adjacent to the drain region. Preferably, the first isolation and the second isolation comprise different material and different depths or same material and different depths.

Abstract: A control circuit of a client-side game console includes: a processor and a storage circuit for storing a computer program product. The processor is arranged to operably execute the computer program product to perform following operations: establishing networking connection between the client-side game console and a master-side game console; receiving client-side input values generated by a user control device of the client-side game console; transmitting the client-side input values to the master-side game console; receiving a target instruction and a pseudo clock indicator value transmitted from the mater-side game console; executing the target instruction in a client-side emulating environment based on the pseudo clock indicator value; and rendering an updated client-side game screen according to execution results of the target instruction and displaying the updated client-side game screen on a display device.

Abstract: A control circuit of a master-side game console includes: a processor and a storage circuit for storing a computer program product.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first gate structure on the first region and a second gate structure on the second region; forming a first spacer around the first gate structure; forming a first epitaxial layer adjacent to two sides of the first spacer; forming a buffer layer on the first gate structure; and forming a contact etch stop layer (CESL) on the buffer layer on the first region and the second gate structure on the second region.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first gate structure on the first region and a second gate structure on the second region; forming a first spacer around the first gate structure; forming a first epitaxial layer adjacent to two sides of the first spacer; forming a buffer layer on the first gate structure; and forming a contact etch stop layer (CESL) on the buffer layer on the first region and the second gate structure on the second region.

Abstract: A docking device includes a bus interface and a network interface controller. The bus interface is configured to be connected to a host device. The network interface controller is coupled to the bus interface and configured to receive a host-based MAC address of the host device and load the host-based MAC address for a network communication, if the host device is connected to the docking device via the bus interface. The host-based MAC address is stored in a table with a vendor specific format structure in a BIOS of the host device.

Abstract: A docking station includes a network interface controller (NIC), a dock-side controller and a dock-side connector interface. The NIC is configured to transmit one or more management component transport protocol (MCTP) packets via a system management bus (SMbus). The dock-side controller is electrically coupled to the SMbus, and configured to encode the one or more MCTP packets to one or more vendor specific protocol (VSP) packets. The dock-side connector interface is electrically coupled to the dock-side controller, and configured to transmit the one or more VSP packets to an electrical device to control a basic input output system (BIOS) of the electrical device on the condition that the electrical device is connected to the docking station via the dock-side connector interface.

Abstract: A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure; a first oxide layer on the first fin-shaped structure; a second oxide layer on and directly contacting the first oxide layer and the STI; and a third oxide layer on the second fin-shaped structure, wherein a thickness of the third oxide layer is less than a thickness of the first oxide layer.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a first gate structure and a second gate structure on the fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; removing the second gate structure and part of the fin-shaped structure to forma first trench; forming a dielectric layer into the first trench; and planarizing part of the dielectric layer to form a single diffusion break (SDB) structure. Preferably, the top surfaces of the SDB structure and the first gate structure are coplanar.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.

Abstract: A control circuit of a client-side game console includes: a processor and a storage circuit for storing a computer program product. The processor is arranged to operably execute the computer program product to perform following operations: establishing networking connection between the client-side game console and a master-side game console; receiving client-side input values generated by a user control device of the client-side game console; transmitting the client-side input values to the master-side game console; receiving a target instruction and a pseudo clock indicator value transmitted from the mater-side game console; executing the target instruction in a client-side emulating environment based on the pseudo clock indicator value; and rendering an updated client-side game screen according to execution results of the target instruction and displaying the updated client-side game screen on a display device.