Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.

Abstract: Disclosures of the present invention describe an optical proximity sensor, which is particularly designed to have functionality of canceling an ambient light noise and/or an optical crosstalk noise by using light-to-frequency conversion technique, and comprises: a controlling and processing circuit, a lighting unit, a light receiving unit, an analog adder, a first DAC unit, a second DAC unit, and a light-to-digital conversion (LDC) unit. In the controlling of the controlling and processing circuit, the first DAC unit and the second DAC unit would respectively generate a first compensation current signal and a second compensation current signal to the analog adder, such that a noise signal of ambient light and a noise signal of optical crosstalk existing in an optical current signal of object reflection light would be canceled by the two compensation current signals in the analog adder.

Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The staked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.

Abstract: A light sensor device is provided. It is controlled with a dual-mode master-and-slave microcontroller unit (MCU) application. An MCU is embedded into a light sensor chip. The original dual-mode master-and-slave dual-CPU architectures are combined to be operated as a single-CPU architecture. Since the original circuit pin design is followed, it is possible to be compatible with the old circuit design. The present invention uses a single-CPU architecture to directly control light sensors. Through the configuration of RAM, an inter-integrated circuit bus (I2C I/F) can be redirected to an internal non-volatile memory to switch the operational mode of the light sensor chip from a slave machine to a host machine which switches off the interrupt pin and, then, turns to a GPIO pin. Thus, the present invention provides a simple single-CPU architecture with easy use and effectively-lowered cost.

Abstract: The invention is related to a method of three-dimensional face reconstruction by inputting a single face image to reconstruct a three-dimensional face model, therefore, the human face image is seen at various angles of three-dimensional face through rotating the model images.

Abstract: The present invention provides a contactless-type sport training monitor method, comprising: selecting at least an image database to recognize a plurality of expressions in the image database; making pre-processing for the plurality of expressions: using a convolutional neural network as a feature point extraction model; acquiring a human image; tracking a first target region and a second target region in the human image; making chrominance-based rPPG trace extraction; using the deep level model to compare the second target region image; and to calculate a post-exercise heart rate recovery achievement ratio, to judge the Rating of Perceived Exertion, and judging whether the human body is under overtraining status or not.

Abstract: A facial expression recognition training system includes a training module, feature database, a capturing module, a recognition module and an adjusting module. The training module trains a facial expression feature capturing model according to known face images. The feature database stores known facial expression features of the known face images. The capturing module continuously captures first face images, and the facial expression feature capturing model outputs facial expression features of the first face images according to the first face images. The recognition module compares the facial expression features and the known facial expression features, and fit the facial expression features to the first known facial expression features that is one kind of the known facial expression feature accordingly. The adjusting module adjusts the facial expression feature capturing model to reduce the differences between the facial expression features and the known facial expression features.

Abstract: A tiled display device includes a first panel. The first panel includes a first lower substrate and a first upper substrate disposed opposite to the first lower substrate. The first upper substrate includes a first upper surface, a first lower surface and a first side surface located between the first upper surface and the first lower surface. The tiled display device further includes a second panel disposed adjacent to the first panel. The second panel includes a second lower substrate and a second upper substrate disposed opposite to the second lower substrate. The second upper substrate includes a second upper surface, a second lower surface and a second side surface located between the second upper surface and the second lower surface. The second side surface is disposed adjacent to the first side surface.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: An electronic package is provided, including: a first substrate having a first insulating portion; a first electronic component disposed on the first substrate; a second substrate having a second insulating portion and stacked on the first substrate through a plurality of conductive elements; and a first encapsulant formed between the first substrate and the second substrate. The first insulating portion of the first substrate differs in rigidity from the second insulating portion of the second substrate. As such, during a high temperature process, one of the first substrate and the second substrate pulls at the other to bend toward the same direction, thereby reducing warpage deviation of the overall electronic package. The present invention further provides a method for fabricating the electronic package.

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.

Abstract: A people-flow analysis system includes an image source, a computing device, and a host. The image source captures a first image and a second image. The computing device is connected to the image source. The computing device identifies the first image according to a data set to generate a first detecting image. The first detecting image has a position box corresponding to a pedestrian in the first image. The computing device generates a tracking image according to the data set and a difference between the first detecting image and the second image. The tracking image has another position box corresponding to a pedestrian in the second image. The host is connected to the computing device and generates a people-flow list according to the first detecting image and the tracking image.

Abstract: The invention is related to a method of three-dimensional face reconstruction by inputting a single face image to reconstruct a three-dimensional face model, therefore, the human face image is seen at various angles of three-dimensional face through rotating the model images.

Abstract: A method of forming a semiconductor structure is disclosed. A fin structure is formed on a substrate and a trench is formed in the fin structure. The trench has a top corner, an upper portion having an upper sidewall and a lower portion having a lower sidewall. A first dielectric layer is then formed on the substrate and fills the lower portion of the trench. After that, a second dielectric layer is formed on the substrate and covers the top corner and the upper sidewall of the trench. The second dielectric layer also covers an upper surface of the first dielectric layer.

Abstract: A display device is provided. The display device includes a plurality of pixels. At least one of the pixels includes a semiconductor device having a light-emitting area, a first light conversion layer disposed on the semiconductor device and a first scattering layer disposed on the semiconductor device. The first scattering layer is disposed on the first light conversion layer.

Abstract: The disclosure provides a display apparatus. The display apparatus of the disclosure includes a substrate having a plurality of pixel regions, a plurality of active elements, a plurality of first signal lines and second signal lines, a plurality of ground signal lines and a plurality of light emitting diodes (LEDs). The plurality of ground signal lines are disposed on the substrate and arranged to alternate with the first signal lines. At least one LED has first and second electrodes. The first electrode of at least one LED is electrically connected with a corresponding active element. A second electrode of at least one LED is electrically connected with a corresponding ground signal line. At least two LEDs disposed in an identical pixel region is electrically connected with an identical ground signal line between two first signal lines adjacent to each other. The display apparatus of the disclosure has high resolution.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A magnetic tunnel junction (MTJ) structure of a magnetic random access memory (MRAM) cell includes an insulation layer, a patterned MTJ film stack, an aluminum oxide protection layer, an interlayer dielectric, and a connection structure. The patterned MTJ film stack is disposed on the insulation layer. The aluminum oxide protection layer is disposed on a sidewall of the patterned MTJ film stack, and the aluminum oxide protection layer includes an aluminum film oxidized by an oxidation treatment. The interlayer dielectric covers the aluminum oxide protection layer and the patterned MTJ film stack. The connection structure penetrates the interlayer dielectric above the patterned MTJ film stack, and the connection structure is electrically connected to a topmost portion of the patterned MTJ film stack.

Abstract: An electronic package is provided, including: a first substrate having a first insulating portion; a first electronic component disposed on the first substrate; a second substrate having a second insulating portion and stacked on the first substrate through a plurality of conductive elements; and a first encapsulant formed between the first substrate and the second substrate. The first insulating portion of the first substrate differs in rigidity from the second insulating portion of the second substrate. As such, during a high temperature process, one of the first substrate and the second substrate pulls at the other to bend toward the same direction, thereby reducing warpage deviation of the overall electronic package. The present invention further provides a method for fabricating the electronic package.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a substrate, and an interlayer dielectric disposed on the substrate which has agate structure therein. The gate structure further includes a gate electrode with a protruding portion, and a gate dielectric layer disposed between the gate electrode and the substrate. A spacer is disposed between the interlayer dielectric and the gate electrode. An insulating cap layer is disposed atop the gate electrode and encompasses the top and the sidewall of the protruding portion.