Abstract: A semiconductor device includes a substrate having an input/output (I/O) region, an one time programmable (OTP) capacitor region, and a core region, a first metal gate disposed on the I/O region, a second metal gate disposed on the core region, and a third metal gate disposed on the OTP capacitor region. Preferably, the first metal gate includes a first high-k dielectric layer, the second metal gate includes a second high-k dielectric layer, and the first high-k dielectric layer and the second high-k dielectric layer include an I-shape.

Abstract: Disclosures of the present invention describe an optical proximity sensor, which is particularly designed to have functionality of canceling an ambient light noise and/or an optical crosstalk noise by using light-to-frequency conversion technique, and comprises: a controlling and processing circuit, a lighting unit, a light receiving unit, an analog adder, a first DAC unit, a second DAC unit, and a light-to-digital conversion (LDC) unit. In the controlling of the controlling and processing circuit, the first DAC unit and the second DAC unit would respectively generate a first compensation current signal and a second compensation current signal to the analog adder, such that a noise signal of ambient light and a noise signal of optical crosstalk existing in an optical current signal of object reflection light would be canceled by the two compensation current signals in the analog adder.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate, and includes a first electrode and a second electrode. The transistor is disposed on the substrate and electrically connected to the light-emitting element. The transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The first electrode and the second electrode of the light-emitting element do not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: A method for fabricating semiconductor device includes the steps of providing a substrate having a first region and a second region, forming a first fin-shaped structure on the first region, removing part of the first fin-shaped structure to form a first trench, forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure, forming a first gate structure and a second gate structure on the DDB structure as a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure, and forming a contact plug between the first gate structure and the second gate structure on the DDB structure.

Abstract: An electronic device includes multiple light-emitting boards, a second circuit board, a control board, and multiple conductive members. Each light-emitting board includes a first circuit board and multiple light-emitting elements. Multiple light-emitting elements are disposed on the first circuit board and are electrically connected to the first circuit board. Multiple light-emitting boards are disposed on the second circuit board and are electrically connected to the second circuit board. The control board is disposed on the second circuit board. Multiple conductive members are disposed on at least one side of the second circuit board. The control board is electrically connected to the second circuit board through multiple conductive members.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

Abstract: A method for fabricating a nanowire transistor includes the steps of first forming a nanowire channel structure on a substrate, in which the nanowire channel structure includes first semiconductor layers and second semiconductor layers alternately disposed over one another. Next, a gate structure is formed on the nanowire channel structure and then a source/drain structure is formed adjacent to the gate structure, in which the source/drain structure is made of graphene.

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a gate electrode on the barrier layer, a field plate adjacent to two sides of the gate electrode, and a first passivation layer adjacent to two sides of the gate electrode. Preferably, a sidewall of the field plate includes a first curve.

Abstract: An electronic device including a substrate, an electronic unit, a data line, a control unit, a test pad and a test switch element is provided by the present disclosure. The substrate includes a first surface and a second surface opposite to the first surface, wherein the first surface includes an active area. The electronic unit is disposed on the substrate and located in the active area. The data line is disposed on the substrate. The control unit is disposed on the substrate and located in the active area, and the control unit is electrically connected between the electronic unit and the data line. The test pad is disposed on the second surface of the substrate. The test switch element is disposed on the substrate and located in the active area, and the test switch element is electrically connected between the data line and the test pad.

Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The staked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.

Abstract: A method for fabricating a buried word line (BWL) of a dynamic random access memory (DRAM) includes the steps of: forming a first doped region in a substrate; removing part of the first doped region to form a trench in the substrate; forming a gate structure in the trench; and forming a barrier structure between the gate structure and the first doped region.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure; and forming a first gate structure and a second gate structure on the DDB structure. Preferably, a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure; and forming a first gate structure and a second gate structure on the DDB structure. Preferably, a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure.

Abstract: A semiconductor device for internet of things (IoT) device includes a substrate having an array region defined thereon and a ring of dummy pattern surrounding the array region. Preferably, the ring of dummy pattern includes a plurality of magnetic tunneling junctions (MTJs) and a ring of metal interconnect pattern overlapping the MTJs and surrounding the array region. The semiconductor device further includes a gap between the array region and the ring of dummy pattern.

Abstract: A display device includes a substrate, a first signal line disposed on the substrate, and a first pixel including a first transistor having a gate electrode, a source electrode and a drain electrode, wherein the source electrode is electrically connected to the first signal line. The display device includes a fan-out line electrically connected to the first signal line, wherein the fan-out line partially overlaps the first pixel and is formed in a layer different from layers of the gate electrode, the source electrode and the drain electrode.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: An electronic device is provided, the electronic device includes a driving substrate (13), the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, and a plurality of disc-shaped electronic components, at least one disc-shaped electronic component is disposed in at least one circular groove, an alignment element positioned on a top surface of the at least one disc-shaped electronic component, a diameter of the at least one disc-shaped electronic component is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the disc-shaped electronic component and the rectangular groove satisfy the condition of (R+r)/2>(w2+H2)1/2.

Abstract: An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, a plurality of disc-shaped light-emitting units, at least one disc-shaped light-emitting unit is disposed in at least one circular groove, and the at least one disc-shaped light-emitting unit includes an alignment element positioned on a top surface of the at least one disc-shaped light-emitting unit, a diameter of the at least one disc-shaped light-emitting unit is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the at least one disc-shaped light-emitting unit and the at least one rectangular groove satisfy the condition of (R+r)/2>(w2+H2)1/2.