Patents by Inventor Chun-Hung Lin

Chun-Hung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12009216
    Abstract: A semiconductor structure includes a semiconductor fin extending from a substrate, a source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the S/D feature, where the silicide layer extends along a sidewall of the S/D feature, and an etch-stop layer (ESL) disposed along a sidewall of the silicide layer.
    Type: Grant
    Filed: July 25, 2023
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
  • Patent number: 12009215
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an epitaxial structure over the fin portion. The semiconductor device structure includes a dielectric fin over the base portion. The semiconductor device structure includes a silicide layer between the dielectric fin and the epitaxial structure. A void is between the silicide layer and the dielectric fin.
    Type: Grant
    Filed: April 21, 2023
    Date of Patent: June 11, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsiung Lin, Jung-Hung Chang, Shih-Cheng Chen, Kuo-Cheng Chiang, Chih-Hao Wang
  • Publication number: 20240186323
    Abstract: An integrated circuit includes a plurality of transistors and a vertical local interconnection. The transistors include a plurality of gate components, a plurality of front-side source/drain epitaxies and a plurality of back-side source/drain epitaxies, wherein the front-side source/drain epitaxies are closer to a front-side side of the integrated circuit than the back-side source/drain epitaxies. The vertical local interconnection connects a first connected-one of the front-side source/drain epitaxies with a second connected-one of the back-side source/drain epitaxies. A covered-one of the gate components is located between the first connected-one and the second connected-one, the covered-one comprises an front-side portion, a back-side portion and a covered portion connecting the front-side portion with the back-side portion, and the vertical local interconnection crosses the covered portion and exposes the front-side portion and the back-side portion.
    Type: Application
    Filed: January 20, 2023
    Publication date: June 6, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Yu LIN, Chun-Fu CHENG, Hsiang-Hung HUANG
  • Publication number: 20240178102
    Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.
    Type: Application
    Filed: April 21, 2023
    Publication date: May 30, 2024
    Inventors: Chun-Ti LU, Hao-Yi TSAI, Chiahung LIU, Ken-Yu CHANG, Tzuan-Horng LIU, Chih-Hao CHANG, Bo-Jiun LIN, Shih-Wei CHEN, Pei-Rong NI, Hsin-Wei HUANG, Zheng GangTsai, Tai-You LIU, Steve SHIH, Yu-Ting HUANG, Steven SONG, Yu-Ching WANG, Tsung-Yuan YU, Hung-Yi KUO, CHung-Shi LIU, Tsung-Hsien CHIANG, Ming Hung TSENG, Yen-Liang LIN, Tzu-Sung HUANG, Chun-Chih CHUANG
  • Patent number: 11993674
    Abstract: A functional resin material is manufactured by the following reagents including a polyol, a polyamine, a first cross-linking agent, a second cross-linking agent, and a nanocellulose. Each of the first cross-linking agent and the second cross-linking agent includes an isocyanate block.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: May 28, 2024
    Assignee: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Sun-Wen Juan, Chun-Hung Lin, Yi-Ching Sung
  • Patent number: 11996483
    Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin, Chih-Hao Wang
  • Patent number: 11990507
    Abstract: A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: May 21, 2024
    Assignee: United Microelectronics Corp.
    Inventors: Chin-Hung Chen, Ssu-I Fu, Chih-Kai Hsu, Chun-Ya Chiu, Chia-Jung Hsu, Yu-Hsiang Lin
  • Publication number: 20240161843
    Abstract: An anti-fuse memory device includes an anti-fuse module, a reference current circuit and a controller. A write enable signal enables a write controller and a write buffer of the anti-fuse module to program a selected anti-fuse memory cell in an anti-fuse array of the anti-fuse module, and a timing controller of the anti-fuse module stops a program operation of the anti-fuse array after a sense amplifier of the anti-fuse module changes a state of a readout data signal for a predetermined time duration.
    Type: Application
    Filed: September 20, 2023
    Publication date: May 16, 2024
    Applicant: eMemory Technology Inc.
    Inventors: Chia-Fu Chang, Chun-Hung Lin, Jen-Yu Peng, You-Ruei Chuang
  • Publication number: 20240156440
    Abstract: A method of reconstructing transcranial images using a dual-mode ultrasonic phased array includes steps of: controlling channels to emit energy toward an intracranial target point of a patient; respectively generating backscattered radiofrequency (RF) data by using the channels to receive backscattered energy reflected from the intracranial target; and reconstructing an acoustic distribution image based on those backscattered RF data in real-time. Compared with Pre-Treatment Ray Tracing Method, the present invention can display intracranial pressure distribution in real-time; compared with MR Thermometry, the present invention can be applied to low-energy applications without temperature change; and compared with Passive Cavitation Imaging, the present invention can stably present acoustic distribution images without relying on microbubbles.
    Type: Application
    Filed: November 8, 2023
    Publication date: May 16, 2024
    Inventors: HAO-LI LIU, HSIANG-CHING LIN, ZHEN-YUAN LIAO, HSIANG-YANG MA, CHIH-HUNG TSAI, CHUN-HAO CHEN
  • Patent number: 11980193
    Abstract: Pesticidal compositions for improving physical characteristics of pesticide formulations which comprise natural pesticidal oil active ingredients are disclosed. One such composition comprises a pesticidal natural oil active ingredient, a surfactant to disperse the active ingredient in a water emulsion, a polymeric pour point depressant effective to reduce a pour point temperature of the pesticidal natural oil active ingredient and a hydrocarbon solvent. Methods for providing pesticidal compositions and application to control one or more pests are also disclosed.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: May 14, 2024
    Assignee: Terramera, Inc.
    Inventors: Hangsheng Li, Doug Ta Hung Chou, Steven Chun Hon Lin
  • Publication number: 20240152187
    Abstract: A foldable electronic device including a first body, a second body, a hinge module, and a cover is provided. The hinge module is connected to the first body and the second body, such that the first body and the second body are rotated relatively to be folded or unfolded via the hinge module. The hinge module has a protruding rod eccentric to a rotation center of the hinge module. The cover is pivoted to the second body and located on a moving path of the protruding rod. The hinge module drives the cover to be rotated relative to the second body via the protruding rod.
    Type: Application
    Filed: October 24, 2023
    Publication date: May 9, 2024
    Applicant: Acer Incorporated
    Inventors: Chun-Hung Wen, Chun-Hsien Chen, Hui-Ping Sun, Wen-Neng Liao, Yu-Ming Lin, Kuan-Lin Chen
  • Patent number: 11978511
    Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Huei Lee, Chun-Wei Chang, Jian-Hong Lin, Wen-Hsien Kuo, Pei-Chun Liao, Chih-Hung Nien
  • Publication number: 20240142664
    Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.
    Type: Application
    Filed: February 12, 2023
    Publication date: May 2, 2024
    Inventors: Han-Yi CHANG, Chun-Han CHEN, Tsung-Kao HSU, Wei-che WANG, Yu-Hung LIN, Wan-Ying GAO, Li-Hao LIU
  • Publication number: 20240145641
    Abstract: A color conversion panel and a display device are provided. The color conversion panel includes an opaque substrate and a sapphire substrate. The opaque substrate includes a plurality of first pixel openings, a plurality of second pixel openings and a plurality of third pixel openings. The first pixel openings are filled with red quantum dot material, and the second pixel openings are filled with green quantum dot material. The sapphire substrate is on the opaque substrate. A first surface of the sapphire substrate that faces the opaque substrate has a plurality of first arc surfaces corresponding to the first pixel openings, a plurality of second arc surfaces corresponding to the second pixel openings, and a plurality of third arc surfaces corresponding to the third pixel openings.
    Type: Application
    Filed: December 15, 2022
    Publication date: May 2, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Kai-Ling Liang, Wei-Hung Kuo, Hui-Tang Shen, Chun-I Wu, Suh-Fang Lin
  • Publication number: 20240124844
    Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 18, 2024
    Inventors: Chia-Hsin Lee, Po-Cheng Lin, Yong-Cheng Kao, Ming-Hsi Chuang, Chun-Hung Chen, Chao-Liang Chang, Kai-Ling Zhang
  • Publication number: 20240128127
    Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.
    Type: Application
    Filed: December 28, 2023
    Publication date: April 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Kai Hsu, Ssu-l Fu, Chun-ya Chiu, Chi-Ting Wu, Chin-HUNG Chen, Yu-Hsiang Lin
  • Publication number: 20240113010
    Abstract: A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.
    Type: Application
    Filed: September 20, 2023
    Publication date: April 4, 2024
    Inventors: Po-Hsien Huang, Yu-Huei Lee, Hsin-Hung Lin, Chun-Yuan Shih, Lien-Chieh Yu
  • Publication number: 20240098932
    Abstract: A foldable electronic device, including a first body, a second body, an air valve movably disposed in the first body, at least one triggering member, and a hinge connecting the first body and the second body, is provided. The first body has multiple openings respectively located at two opposite surfaces. The triggering member is movably disposed in the first body and has a part exposed outside the first body. The air valve and the triggering member are mutually on moving paths of each other. The first body and the second body are rotated to be folded or unfolded relative to each other by the hinge. A part of the triggering member is suitable for bearing a force such that the triggering member drives the air valve, so that the air valve opens or closes the openings.
    Type: Application
    Filed: July 19, 2023
    Publication date: March 21, 2024
    Applicant: Acer Incorporated
    Inventors: Hui-Ping Sun, Jui-Yi Yu, Chun-Hung Wen, Yen-Chou Chueh, Yu-Ming Lin, Chun-Hsien Chen
  • Publication number: 20240094559
    Abstract: A contact lens includes a central region, an annular region and a peripheral region. The central region includes a central point of the contact lens. The annular region symmetrically surrounds the central region. The peripheral region symmetrically surrounds the annular region. The peripheral region includes at least one color pattern portion. The annular region includes at least one power of critical point.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 21, 2024
    Inventors: En-Ping LIN, I-Wei LAI, Chun-Hung TENG
  • Patent number: D1026838
    Type: Grant
    Filed: April 26, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN MICROLOOPS CORP.
    Inventor: Chun-Hung Lin