Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: Provided is a method for skin conditioning comprising administering to a subject in need thereof a composition comprising a Dan Feng peony extract, where the Dan Feng peony extract is extracted from flowers of Dan Feng peony. The Dan Feng peony extract is used to increase the production of hyaluronic acid, maintain the structure of skin keratinocytes, and regulate the moisture content of skin cells.

Abstract: An elastic physiological patch includes a patch assembly and an implant assembly. The patch assembly includes an electronic device, and a soft patch body defining a chamber for receiving the electronic device. The implant assembly is mountable to the electronic device and includes an implant which is capable of being driven to partially pass through the patch body and which is adapted to be implanted in the skin of a subject. The implant and the patch body cooperatively seal the chamber.

Abstract: A semiconductor device includes a substrate, first and second stacks of semiconductor nanosheets, a gate structure, first and second strained layers and first and second dielectric walls. The substrate includes first and second fins. The first and second stacks of semiconductor nanosheets are disposed on the first and second fins respectively. The gate structure wraps the first and second stacks of semiconductor nanosheets. The first and second strained layers are respectively disposed on the first and second fins and abutting the first and second stacks of semiconductor nanosheets. The first dielectric wall is disposed on the substrate and located between the first and second strained layers. The second dielectric wall is disposed on the first dielectric wall and located between the first and second strained layers. A top surface of the second dielectric wall is lower than top surfaces of the first and second strained layers.

Abstract: A working fluid recovery device includes an air moving unit, a water removal unit, a working fluid recovery unit, a condenser, and a working fluid collection tank. The air moving unit is configured to suck in a mixed gas including a non-condensable gas, a steam and a vapor phase of working fluid. The water removal unit is connected to the air moving unit, and configured to remove the steam. The working fluid recovery unit is connected to the water removal unit, and configured to recover the vapor phase of the working fluid and exhaust the non-condensable gas. The condenser is connected to the working fluid recovery unit, and configured to condense the vapor phase of the working fluid into a liquid phase of the working fluid. The working fluid collection tank is connected to the condenser, and configured to store the liquid phase of the working fluid.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first horizontal nanostructures formed over a substrate, and a plurality of second horizontal nanostructures adjacent to the first horizontal nanostructures. The semiconductor structure includes a dielectric wall formed between the first horizontal nanostructures and the second horizontal nanostructures. The semiconductor structure also includes a vertical nanostructure between the dielectric wall and the first horizontal nanostructures, and the vertical nanostructure is connected to and in direct contact with the dielectric wall. The semiconductor structure includes a gate structure surrounding the first horizontal nanostructures, the second horizontal nanostructures and the vertical nanostructure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A striking practice device includes a striking body, a cover, a connecting rod and an outer fixing plate. The striking body includes a hollow portion inside, an assembly hole formed along a direction of the striking body and a cover bole formed along another direction of the striking body. The assembly hole has an inner junction at the hollow portion of the striking body and an outer junction outside the striking body; the cover has a shape corresponding to the cover hole for sealing the cover hole; the connecting rod is installed to the assembly hole and has an inner fixing plate at an end; the inner fixing plate is greater than the assembly hole and disposed at the inner junction; and the outer fixing plate is fixed to the connecting rod and the outer junction of the striking body.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: An electronic device has sensors. More particularly, the electronic device is a small form factor electronic device such as earbuds, styluses, or electronic pencils, earphones, and so on. In some implementations, one or more touch sensors and one or more force sensors are coupled to a flexible circuit. In various implementations, the touch sensor and the force sensor are part of a single module controlled by a single controller. In a number of implementations, the flexible circuit is laminated to one or more portions of an interior surface of the electronic device.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure formed over a substrate, and the first stack structure includes a plurality of nanostructures that extend along a first direction. The semiconductor structure includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of nanostructures that extend along the first direction. The semiconductor structure includes a first gate structure formed over the first stack structure, and the first gate structure extends along a second direction. The semiconductor structure also includes a dielectric wall between the first stack structure and the second stack structure, and the dielectric wall includes a low-k dielectric material, and the dielectric wall is connected to the first stack structure and the second stack structure.

Abstract: A method for performing network control in a wireless communications system and associated apparatus are provided. The method may include: carrying a set of link information in a preamble of a first data transmission frame transmitted from the first network device to a second network device, wherein the set of link information may include at least one indication among the following indications: a destination device indication, a device assignment indication and a transmission power control indication; wherein a third network device is arranged to monitor wireless transmission in the wireless communications system to obtain the set of link information from the first data transmission frame, and determine spatial reuse (SR) transmission availability of the third network device based on the set of link information.

Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.

Abstract: A system and method of docking an information handling system to an intelligent wireless fan dock comprising a docking sensor to detect a docking event, a wireless module to establish a wireless link of the intelligent wireless fan dock with the docked information handling system upon detection of a docking event and to receive a dynamic fan speed request command to adjust extended fan cooling airflow from fan dock control system operating at the docked information handling system, where the fan dock control system has determined that the docked information handling system and the intelligent wireless fan dock pairing enables an increased performance mode and altered power draw limitations for the docked information handling system relative to the information handling system in an undocked state, and increasing the extended fan cooling airflow of a cooling fan based on the dynamic fan speed request command from the docked information handling system.

Abstract: Antenna rotation structure includes a rotating member and an angle adjusting member. The rotating member is rotatably disposed along an axial direction in an accommodating space of the housing and includes a holding portion and a pushing portion disposed at one side of the holding portion spaced apart from the axial direction. The angle adjusting member includes a pressing portion bonded to a through hole of the housing and made of an elastic material and, an abutting portion connected to the pressing portion and corresponding to the pushing portion. When the pressing portion is pressed by a force, it deforms and drives the abutting portion to push the pushing portion to drive the holding portion to rotate about the axial direction to adjust the angle of the antenna.

Abstract: An antenna device and a method for configuring the same are provided. The antenna device includes a grounding metal, a grounding part, a radiating part, a feeding part, a proximity sensor, and a sensing metal. The radiating part is electrically connected to the grounding metal through the grounding part. The feeding part is coupled to the grounding metal through a feeding point. The sensing metal is electrically connected to the proximity sensor. The sensing metal is separated from the radiating part at a distance. The distance is less than or equal to one thousandth of a wavelength corresponding to an operating frequency of the antenna device.

Abstract: An integrated driving device is provided. The integrated driving device includes a touch sensing circuit and an optical sensing circuit. The touch sensing circuit is configured to perform touch sensing in a plurality of touch sensing periods during a first frame period. The optical sensing circuit is configured to perform optical sensing during at least one optical sensing period during the first frame period to obtain optical sensing signals for generating first ambient light information. The touch sensing periods and the optical sensing period are non-overlapping. Correspondingly, an operation method of an integrated driving device is also provided.

Abstract: A casing structure of electronic device including a metal base plate, a transparent cathodic electrodeposition paints layer, and a transparent paints coating layer is provided. The metal base plate has brushed texture and high gloss surface. The transparent cathodic electrodeposition paints layer is disposed on the base metal base plate. The transparent paints coating layer is disposed on the transparent cathodic electrodeposition paints layer. A manufacturing method of casing structure of electronic device is also provided.

Abstract: An example method for optimizing data deletion in a storage system comprises: detecting a command to delete data from a storage volume using a file system, the data stored on one or more blocks within a storage device associated with the storage volume; monitoring a load metric associated with the storage volume, the load metric indicative of a dynamically changing operational load of the storage volume; and initiating, based on the detecting the command and on the monitored load metric, a discard request for the storage device, the discard request commanding the storage device to indicate that the one or more blocks are free for use by the file system to store additional data.