Patents by Inventor Chun Ming (Jimmy) YEH

Chun Ming (Jimmy) YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods to Authenticate a Security Device
    Publication number: 20220050982
    Abstract: Systems and methods to authenticate a security device are disclosed. In one aspect, embodiments of the present disclosure include a method for capturing, by an optical sensor, sequential image frames of the security device. From the sequential image frames of the security device, changes to an optical property of the security device can be measured. The optical property can include an optical refractive property. In a further embodiment, changes in optical refractive properties of the security device can be identified from the changes to the optical property measured from the security device. It can be further determined whether the changes in the optical property matches or fails to match a valid change.
    Type: Application
    Filed: July 28, 2021
    Publication date: February 17, 2022
    Inventors: Nova Spivack, Allie Zhang, Chun Ming Chin
  • Systems and methods for Physical Control Verification and Authentication Event Scan Logging
    Publication number: 20220050983
    Abstract: Systems and methods to perform verification of physical control of a security device by a user are disclosed. In one aspect, embodiments of the present disclosure include a method for identifying a symbol in a first image frame of a microlens array of the security device and/or determining a position of the symbol relative to a predetermined point on a 2D plane of the security device. In a further embodiment, a rate of change of the position of the symbol between a second image and the first image frame of the microlens array can be determined. The physical control of the security device by the user is, for example, ascertained if the user is in close proximity to the security device of if the security device is within a line of sight of the user.
    Type: Application
    Filed: July 28, 2021
    Publication date: February 17, 2022
    Inventors: Nova Spivack, Allie Zhang, Chun Ming Chin
  • Surface light source LED device
    Patent number: 11248758
    Abstract: A surface light source LED device includes a circuit board, at least one power input and at least two LED bar elements, the at least two LED bar elements are arranged in a staggered manner, and each of the LED bar elements includes a plurality of LED bars arranged linearly on the circuit board. Each of the LED bars has a straight strip structure and has a plurality of LED dies of the same type provided inside. The plurality of LED dies is arranged linearly at equal intervals.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: February 15, 2022
    Assignee: EXCELLENCE OPTOELECTRONICS INC.
    Inventors: Wei-Po Shen, Chun-Ming Lai, Chih-Chiang Chang, Wen-Hsing Huang, Tzeng-Guang Tsai, Kuo-Hsin Huang
  • SEMICONDUCTOR DEVICE
    Publication number: 20220045203
    Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, a group III-V gate structure and a group III-V patterned structure. The group III-V body layer and the group III-V barrier layer are disposed on the substrate. The group III-V gate structure is disposed on the group III-V barrier layer within the active region. The group III-V patterned structure is disposed on the group III-V barrier layer within the isolation region. The composition of the group III-V patterned structure is the same as the composition of the group III-V gate structure.
    Type: Application
    Filed: October 24, 2021
    Publication date: February 10, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Wen-Jung Liao
  • METHOD AND SYSTEM FOR IMPROVING EFFICIENCY OF PROTECTING MULTI-CONTENT PROCESS
    Publication number: 20220035751
    Abstract: The invention provides method and system for improving efficiency of protecting multi-content process. The system may cooperate with a memory, and may comprise one or more hardware IPs (intellectual properties) for content processing, one of the one or more IPs may be associated with multiple access identities. The memory may comprise multiple different ranges, each range may register an access of one of the multiple access identities as a permissible access. The method may comprise: selecting one of the access identities for processing a first content, and using the selected access identity when said IP accesses the memory during processing of the first content; selecting a different one of the access identities for processing a second content, and using the selected different access identity when said IP accesses the memory during processing of the second content.
    Type: Application
    Filed: April 8, 2021
    Publication date: February 3, 2022
    Inventors: Yu-Tien CHANG, Lin-Ming HSU, Chun-Ming CHOU
  • High electron mobility transistor and method for fabricating the same
    Patent number: 11239338
    Abstract: According to an embodiment of the present invention, a method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: February 1, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou, Chih-Tung Yeh
  • METHOD FOR FABRICATING ELECTRONIC PACKAGE AND CARRIER STRUCTURE THEREOF
    Publication number: 20220028721
    Abstract: A carrier structure having a strengthening layer is provided. The strengthening layer comprises 5 to 30% by weight polysiloxane, 1 to 20% by weight silicon dioxide, and 60 to 85% by weight polyethylene terephthalate (PET) film. The carrier structure is used in a semiconductor packaging process for improving the process reliability.
    Type: Application
    Filed: March 23, 2021
    Publication date: January 27, 2022
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Tse-Yuan Lin, Chun-Ming Laio, Yu-Chih Cheng
  • SURFACE LIGHT SOURCE LED DEVICE
    Publication number: 20220018503
    Abstract: A surface light source LED device includes a circuit board, at least one power input and at least two LED bar elements, the at least two LED bar elements are arranged in a staggered manner, and each of the LED bar elements includes a plurality of LED bars arranged linearly on the circuit board. Each of the LED bars has a straight strip structure and has a plurality of LED dies of the same type provided inside. The plurality of LED dies is arranged linearly at equal intervals.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 20, 2022
    Inventors: WEI-PO SHEN, CHUN-MING LAI, CHIH-CHIANG CHANG, WEN-HSING HUANG, TZENG-GUANG TSAI, KUO-HSIN HUANG
  • Architecture for microcontroller and method for reading data applied to microcontroller
    Patent number: 11188483
    Abstract: An architecture for a microcontroller includes a microcontroller, a system memory, an instruction memory, a data memory, a first bus, and a second bus, where the first and second buses perform functions of a single bus. The microcontroller connects to both buses. The instruction memory and the data memory are connected to the first bus. The system memory is connected to the second bus. The microcontroller transmits and receives data to and from the instruction memory and the data memory through the first bus. The microcontroller transmits and receives data to and from the system memory through the second bus. The instruction memory and the data memory transmit and receive data to and from the system memory through the second bus connected to the first bus, avoiding delays caused by rights and priorities and arbitration of same.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: November 30, 2021
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Chun-Ming Lu, Chien-Fa Chen
  • POWER LINE STRUCTURE
    Publication number: 20210368614
    Abstract: A power line structure includes a dielectric layer, a first conductive component, a second conductive component, and a third conductive component. The first conductive component is disposed at a first side of the dielectric layer. The second conductive component is disposed at the first side of the dielectric layer. The third conductive component is disposed at the first side of the dielectric layer and between the first conductive component and the second conductive component. Each of the voltage of the first conductive component and the second conductive component is equal to a ground voltage. The third conductive component is configured to receive a first power voltage.
    Type: Application
    Filed: March 25, 2021
    Publication date: November 25, 2021
    Inventors: Chun-Ming HUANG, Ruey-Beei WU, Shih-Hung Wang, Ting-Ying WU, Ming-Chung Huang
  • Semiconductive device with mesa structure and method of fabricating the same
    Patent number: 11177377
    Abstract: A mesa structure includes a substrate. A mesa protrudes out of the substrate. The mesa includes a slope and a top surface. The slope surrounds the top surface. A lattice damage area is disposed at inner side of the slope. The mesa can optionally further includes an insulating layer covering the lattice damage area. The insulating layer includes an oxide layer or a nitride layer.
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: November 16, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Wen-Jung Liao, Chun-Liang Hou
  • Security Device with Chaosmetric Patterns
    Publication number: 20210347195
    Abstract: Apparatuses of a security device with chaosmetric patterns are disclosed. In one aspect, embodiments of the present disclosure include a security device having a physical surface having formed thereon a composite pattern. The composite pattern can be created from overlap of the imprinting of a first halftone pattern and a second halftone pattern. The first halftone pattern can be created from a first basic building block which forms chaosmetric artifacts in the physical surface upon printing.
    Type: Application
    Filed: May 5, 2021
    Publication date: November 11, 2021
    Inventors: Nova Spivack, Allie Zhang, Chun Ming Chin
  • Semiconductor device and fabricating method thereof
    Patent number: 11171227
    Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, a group III-V gate structure and a group III-V patterned structure. The group III-V body layer and the group III-V barrier layer are disposed on the substrate. The group III-V gate structure is disposed on the group III-V barrier layer within the active region. The group III-V patterned structure is disposed on the group III-V barrier layer within the isolation region. The composition of the group III-V patterned structure is the same as the composition of the group III-V gate structure.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: November 9, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Wen-Jung Liao
  • THERMAL TRANSFER MASSAGER AND A TRANSFER REPLACEMENT STRUCTURE THEREOF
    Publication number: 20210338518
    Abstract: The present invention discloses a thermal transfer massager and a transfer replacement structure thereof. The massager performs a thermal therapy to tendons and includes a spherical main body which is held by a palm for operation. The heat mass stored in the main body is released directionally, and an opening for the access of thermal transfer substance is blocked effectively by a sealing cap with radial thermal expansion effect. At the orientation in which the main body is used, the main body can be replaced at a three-dimensional angular position. In addition, by the symmetry of an outer curve, a provided heat-resistant sheath unit is replaceably covered on two axial ends of the main body to change the flow of heat balance, thereby achieving a multifunctional massaging effect.
    Type: Application
    Filed: June 30, 2020
    Publication date: November 4, 2021
    Inventor: Chun-Ming YU
  • Apparatus for Reducing Optical Cross-Talk in Image Sensors
    Publication number: 20210335871
    Abstract: According to one example, a device includes a semiconductor substrate. The device further includes a plurality of color filters disposed above the semiconductor substrate. The device further includes a plurality of micro-lenses disposed above the set of color filters. The device further includes a structure that is configured to block light radiation that is traveling towards a region between adjacent micro-lenses. The structure and the color filters are level at respective top surfaces and bottom surfaces thereof.
    Type: Application
    Filed: July 9, 2021
    Publication date: October 28, 2021
    Inventors: Chin-Min Lin, Ching-Chun Wang, Dun-Nian Yaung, Chun-Ming Su, Tzu-Hsuan Hsu
  • METHOD FOR ACCESSING DATA BUS, ACCESSING SYSTEM, AND DEVICE
    Publication number: 20210334230
    Abstract: A method for accessing a data bus includes setting a first-come-first-served basis for determining priorities between masters in addition to a fixed priority being set between the same masters. A number of master ports are connected to a number of masters, and a number of slave ports are connected to a number of slaves. First and second multiplexers are connected between the master ports and the slave ports, a number of decoders are connected to the second multiplexers, and a number of arbiters are connected to the first multiplexers. The master ports have a fixed priority, but each arbiter, in receiving an access-request signal sent by a master port, can determine an order as to which of multiple master ports can access a slave port according to a combination of the fixed priority basis and the first-come-first-served basis. A system and a relevant device are also disclosed.
    Type: Application
    Filed: August 5, 2020
    Publication date: October 28, 2021
    Inventor: CHUN-MING LU
  • HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FABRICATING THE SAME
    Publication number: 20210328050
    Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covering the second III-V compound layer. Numerous electrodes are disposed on the insulating layer and contact the insulating layer, wherein the electrodes are positioned between the gate electrode and the drain electrode and a distribution of the electrodes decreases along a direction toward the gate electrode.
    Type: Application
    Filed: June 29, 2021
    Publication date: October 21, 2021
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Chih-Tung Yeh
  • GATE RESISTANCE IMPROVEMENT AND METHOD THEREOF
    Publication number: 20210296483
    Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially coplanar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 23, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ju-Li HUANG, Hsin-Che CHIANG, Yu-Chi PAN, Chun-Ming YANG, Chun-Sheng LIANG, Ying-Liang CHUANG, Ming-Hsi YEG
  • Thin heat pipe structure
    Patent number: 11125508
    Abstract: A thin heat pipe structure includes a main body having a chamber. The chamber has a wick structure and a working fluid provided therein, and internally defines an evaporating section and at least one condensing section. The condensing section is extended towards at least one or two ends of the evaporating section. The wick structure is provided with at least one groove. The groove is extended through the wick structure along a thickness direction of the main body to connect to two opposite wall surfaces of the chamber, and also extended along a length direction of the main body to communicate with the condensing section and the evaporating section. With these arrangements, the thin heat pipe structure has an extremely small overall thickness and is flexible.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: September 21, 2021
    Assignee: Asia Vital Components Co., Ltd.
    Inventor: Chun-Ming Wu
  • HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
    Publication number: 20210288149
    Abstract: A method for forming a high-electron mobility transistor is disclosed. A substrate is provided. A buffer layer is formed over the substrate. A GaN channel layer is formed over the buffer layer. An AlGaN layer is formed over the GaN channel layer. A GaN source layer and a GaN drain layer are formed on the AlGaN layer within a source region and a drain region, respectively. A gate recess is formed in the AlGaN layer between the source region and the drain region. A p-GaN gate layer is then formed in and on the gate recess.
    Type: Application
    Filed: June 3, 2021
    Publication date: September 16, 2021
    Inventors: Shin-Chuan Huang, Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Wen-Jung Liao, Chun-Liang Hou