Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

Abstract: To provide an inhibitor inhibiting a cytokine storm in a living body due to infectious disease. An inhibitor for inhibiting a cytokine storm includes a fermented composition as a main raw material, the fermented composition is obtained by fermentation and aging of a plurality of substances belonging to fruits, citrus fruits, burdock, and carrot belonging to root vegetables, cereals, sesames, seaweeds, and sugars.

Abstract: The present application discloses a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a conductive line of an Nth metal layer, a first insulating layer, a dielectric layer, a second insulating layer, an interconnect base, and an interconnect body. The first insulating layer is on the conductive line and free from covering a portion of the conductive line. The dielectric layer is on the first insulating layer and free from covering the portion of the conductive line. The second insulating layer is on the dielectric layer and free from covering the portion of the conductive line. The interconnect base is laterally surrounded by the dielectric layer, the first insulating layer, and the second insulating layer. A top surface of the interconnect base and a top surface of the second insulating layer are coplanar.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A semiconductor device includes a fin structure, a metal gate stack, a barrier structure and an epitaxial source/drain region. The fin structure is over a substrate. The metal gate stack is across the fin structure. The barrier structure is on opposite sides of the metal gate stack. The barrier structure comprises one or more passivation layers and one or more barrier layers, and the one or more passivation layers have a material different from a material of the one or more barrier layers. The epitaxial source/drain region is over the barrier structure.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A server device includes a casing, an electronic assembly, a cover, and a heat dissipation device. The electronic assembly includes a circuit board and at least one heat source. The circuit board is disposed on the casing, and the heat source is disposed on the circuit board. The cover is removably disposed on the casing. The heat dissipation device includes at least one air cooling heat exchanger and at least one liquid cooling heat exchanger. The air cooling heat exchanger is fixed on and thermally coupled with the heat source. The liquid cooling heat exchanger is fixed on the cover and thermally coupled with the air cooling heat exchanger.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A display may include an array of pixels. A pixel can include an organic light-emitting diode, up to three thin-film transistors, and up to two capacitors. The pixel can include a drive transistor, an emission transistor, and a select transistor. The select transistor can be used to apply a reference voltage to the gate of the drive transistor during a global reset phase and during a global threshold voltage sampling phase and can also be used to apply a data voltage to the gate of the drive transistor during a data programming phase. The drive transistor can receive a power supply voltage that toggles between a low voltage during the global reset phase and a high voltage during other phases of operation. Configured and operated in this way, the pixel need not include separate dedicated anode reset and initialization transistors.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: A method includes depositing a hard mask over a target layer. Depositing the hard mask includes depositing a first hard mask layer having a first density and depositing a second hard mask layer over the first hard mask layer, the second hard mask layer having a second density greater than the first density. The method further includes forming a plurality of mandrels over the hard mask; depositing a spacer layer over and along sidewalls of the plurality of mandrels; patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels; after patterning the spacer layer, removing the plurality of mandrels; transferring a patterning the plurality of spacers to the hard mask; and patterning the target layer using the hard mask as a mask.

Abstract: A computing device obtains a video and obtains a target facial image, where the target facial image comprises a target face to be edited. The computing device determines a target facial feature vector from the target facial image to be edited. For each of a plurality of frames in the video, the computing device is further configured to: identify facial regions of individuals depicted in the video, generate candidate facial feature vectors for each of the identified facial regions, compare each of the candidate facial feature vectors to the target facial feature vector, and apply a mask effect to facial regions of corresponding facial feature vectors based on the comparison to generate an edited video.

Abstract: A focal length adjustment mechanism, adapted for adjusting a focal length adjustment device located in a housing of a projector. The focal length adjustment mechanism includes a knob and a first stroke adjustment member. The first stroke adjustment member is located in the housing and includes a first end and a second end opposite to each other and a first pivot located between the first end and the second end. The first end is connected to the focal length adjustment device. The knob is connected to the second end. The knob rotates to drive the first stroke adjustment member to rotate around the first pivot. A distance between the first pivot and the first end is less than a distance between the first pivot and the second end, such that a movement path of the first end is less than a movement path of the second end.

Abstract: The present disclosure provides a method for forming a multilayer wiring structure, which includes: forming a patterned copper-phosphorous alloy layer over a carrier by performing a plating operation, and forming a dielectric layer over the patterned copper-phosphorous alloy layer. The forming the patterned copper-phosphorous alloy layer includes providing a plating solution having a copper source and a phosphorous source.

Abstract: A first packet flow and a second packet flow support a first protocol, a third packet flow and a fourth packet flow support a second protocol, and a priority of the first protocol is lower than a priority of the second protocol. The first packet flow and the third packet flow are transmitted from a first ingress port to a first egress port. The second packet flow and the fourth packet flow are transmitted from a second ingress port to a second egress port. When the packet processing device is in a congested state, a bandwidth modulator performs a first suppression process on the first packet flow at the first ingress port, and the bandwidth modulator performs a second suppression process on the second packet flow at the second egress port or on the third packet flow at the first ingress port.

Abstract: The present teaching, which includes methods, systems and computer-readable media, relates to providing query suggestions based on a number of data sources that include person's personal data and non-personal data. The disclosed techniques may include receiving an input from a person, obtaining a first set of suggestions based on a person corpus derived from at least one data source private to the person, obtaining a second set of suggestions based on information from an additional data source, ranking the first and second sets of suggestions to generate a ranked list of suggestions, and presenting at least some of the ranked suggestions.

Abstract: The present invention relates to cereal grain comprising an aleurone, an embryo, a starchy endosperm and a reduced level and/or activity of a mitochondrial single-stranded DNA binding (mtSSB) polypeptide, a RECA3 polypeptide or a TWINKLE polypeptide. Grain of the invention, or aleurone therefrom, has improved nutritional properties, and hence is particularly useful for human and animal feed products.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A video device, a wireless audio device and a method for performing audio and video (AV) synchronization between the video device and the wireless audio device are provided. The method includes: utilizing a controller of the video device to determine a video delay of the video device; utilizing the controller to determine an audio delay of the video device; utilizing the controller to receive information of a communications quality of the wireless audio device from the wireless audio device, to determine a wireless communications delay between the video device and the wireless audio device according to the communications quality; utilizing the controller to generate a time map information according to the video delay, the audio delay and the wireless communications delay; and transmitting the time map information from the video device to the wireless audio device for AV synchronization between the video device and the wireless audio device.