Abstract: A spliced micro light-emitting-diode display panel includes multiple circuit boards spliced with each other and multiple micro light-emitting-diode modules. Each circuit board includes at least one driver IC. The micro light-emitting-diode modules are disposed separately on each circuit board and are electrically connected to the driver IC. Each micro light-emitting-diode module includes multiple light-emitting-diode units arranged in an array. On each circuit board, the driver IC drives the light-emitting-diode units of the micro light-emitting-diode modules to emit light. There is a first gap between any adjacent two of the light-emitting-diode units on any adjacent two of the circuit boards, and there is a second gap between any adjacent two of the light-emitting-diode units on each micro light-emitting-diode module, and the first gap is smaller than the second gap.

Abstract: According to one aspect, profile modeling may be achieved by receiving a first set of data and performing feature selection on the first set of data, receiving a second set of data and performing classification on the second set of data using fuzzy logic inference, receiving a third set of data and performing clustering on the third set of data using hierarchical cluster analysis, and generating a prediction model based on the first set of data, the second set of data, and the third set of data. The prediction model may generate a prediction for profile modeling by receiving a first input of the same data type as the first set of data, a second input of the same data type as the second set of data and outputting the prediction for profile modeling having the same data type as the third set of data.

Abstract: An embodiment of the present disclosure provides an online integrated microcontroller development tool system. Through the present disclosure, a microcontroller block of a suitable model number is selected according to a client requirement, pins of the microcontroller may be arranged, the microcontroller block with the arranged have been pins is connected to a functional component selected by the client, a corresponding circuit structure is generated, and based on the circuit structure, a microcontroller system hardware description code is generated and output. Different from the conventional development platform, the present disclosure helps clients to develop microcontroller application circuits for different applications through a pin required module, a functional component module and a description code project output module. Thus, purposes of simple operation and saving development time can be achieved.

Abstract: A flow meter includes a meter body and a pressure sensor. The meter body has a liquid impact surface, a sensing surface opposite to the liquid impact surface, and a mounting hole extending from the sensing surface toward the liquid impact surface. The mounting hole is a blind hole. The pressure sensor is mounted in the mounting hole, and has a resistance value that can be measured and that can be changed correspondingly with a change in liquid pressure caused by a change in flow rate. A device for producing an active hydroxyl free radical solution is also disclosed.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covering the second III-V compound layer. Numerous electrodes are disposed on the insulating layer and contact the insulating layer, wherein the electrodes are positioned between the gate electrode and the drain electrode and a distribution of the electrodes decreases along a direction toward the gate electrode.

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer and a recess. The group III-V body layer is disposed on the substrate. The group III-V barrier layer is disposed on the group III-V body layer in the active region and the isolation region. The recess is disposed in the group III-V barrier layer without penetrating the group III-V barrier layer in the active region.

Abstract: A package substrate comprises first, second and third electrical test contacts, wherein the package substrate is provided with an upper element plane and a lower SMD electrode plane on two sides. The side edge of the upper element plane is provided with first and second electrodes of the main element and first and second electrodes of the secondary element. The main element of LED chip is electrically connected between the first and second electrodes of the main element, a parallel circuit secondary element is electrically connected between the first and second electrodes of the secondary element. The electrical characteristics of the main element of LED chip and the parallel circuit secondary element are measured through the first, second, and third electrical test contacts when electrically connected.

Abstract: The invention comprises a light emitting diode chip and a package substrate. The light emitting diode chip is provided with a semiconductor epitaxial structure, a lateral extending interface structure, a chip conductive structure, an N-type electrode located above the semiconductor epitaxial structure and a P-type bypass detection electrode located on the lateral extending interface structure. The chip conductive structure is provided with a P-type main electrode located on a lower side. The package substrate comprises a plurality of electrode contacts through which the N-type electrode, the P-type bypass detection electrode and the P-type main electrode are connected, and a process quality of a alternative substrate adhesive layer in one of the semiconductor epitaxial structure and the chip conductive structure and a chip-substrate bonding adhesive layer between the P-type main electrode and the package substrate is evaluated by detecting electrical characteristics.

Abstract: A backlight module includes a glass substrate, a light-outputting sheet, a light guide plate, and a reflective sheet. The light-outputting sheet is disposed under the glass substrate and has a light-outputting region and a light-shielding region. The light-outputting region is disposed corresponding to the glass substrate. The light-shielding region is disposed corresponding to an outer periphery of the glass substrate. The light guide plate is disposed under the light-outputting sheet and has a light guide region and a light mixing region. The light guide region is disposed corresponding to the light-outputting region. The light mixing region is configured to receive light of a light-emitting element and guide the light to the light guide region. The light leaves the light guide region and then sequentially propagates through the light-outputting region and the glass substrate. The reflective sheet is disposed under the light guide plate.

Abstract: A method for forming a multi-gate semiconductor structure is provided. A substrate including a fin structure is received. First portions of the fin structure are removed to expose a source/drain region of the fin structure. A semiconductor layer is formed in the source/drain region. Second portions of the fin structure are removed to expose a channel region of the fin structure. A surface of the channel region of the fin structure is cleaned. An interfacial layer is formed over the cleaned surface of the channel region of the fin structure.

Abstract: A backlight module includes a glass substrate, a light-outputting sheet, a light guide plate, and a reflective sheet. The light-outputting sheet is disposed under the glass substrate and has a light-outputting region and a light-shielding region. The light-outputting region is disposed corresponding to the glass substrate. The light-shielding region is disposed corresponding to an outer periphery of the glass substrate. The light guide plate is disposed under the light-outputting sheet and has a light guide region and a light mixing region. The light guide region is disposed corresponding to the light-outputting region. The light mixing region is configured to receive light of a light-emitting element and guide the light to the light guide region. The light leaves the light guide region and then sequentially propagates through the light-outputting region and the glass substrate. The reflective sheet is disposed under the light guide plate.

Abstract: The micro light-emitting diode (LED) display matrix module of the disclosure includes a multilayer circuit layer, multiple micro LEDs, and an insulating flat layer. The multilayer circuit layer includes a top circuit layer and a bottom circuit layer. The bottom circuit layer includes multiple pads. The micro LEDs are disposed on the top circuit layer of the multilayer circuit layer and define multiple light-emitting units. Each of the light-emitting units includes three of the micro LEDs that are separated from each other. The light-emitting units are arranged in a matrix of m columns and n rows to define multiple pixel regions, and quantity of the pads is equal to 3m+n. An orthographic projection of each of the micro LEDs on the bottom circuit layer completely overlaps the corresponding pad. The insulating flat layer covers the top circuit layer of the multilayer circuit layer and the micro LEDs.

Abstract: The present disclosure provides a multilayer wiring structure, including a plurality of dielectric layers, a plurality of conductive wiring layers interleaved with the plurality of dielectric layers, wherein the plurality of conductive wiring layers includes copper-phosphorous alloys (such as Cu3P).

Abstract: The present teaching, which includes methods, systems and computer-readable media, relates to providing query suggestions based on a number of data sources including person's personal data and non-personal data. The disclosed techniques may include receiving an input from a person, obtaining a first set of suggestions based on information from a first data source, presenting the first set of suggestions to the person, and presenting, to the person, a second set of suggestions obtained from a person corpus when a portion of the person corpus relevant to the input is accessible. The person corpus may be from a second data source that is private to the person.

Abstract: A prebiotic food product which increases a short-chain fatty acid in an intestine is provided, where the prebiotic food product mainly contains a fermented composition obtained by fermenting and maturing a plurality of ingredients including fruits, citrus, root vegetables such as a burdock and a carrot, cereals, sesames, seaweeds and saccharoses.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: An intelligent lighting device control system includes a plurality of lighting devices and an intelligent lighting device controller. The intelligent lighting device controller includes a detecting module, a main power source module and an intelligent control module. The detecting module has a detecting circuit. The main power source module includes a plurality of first electrode connectors and a common electrode connector. The first electrode connectors are connected to the detecting circuit and connected to the first electrodes of the lighting devices via the detecting circuit. The common second electrode connector is connected to the second electrodes of the lighting devices and outputs an electricity signal to drive the lighting devices, such that the detecting circuit generates a plurality of detecting signals. The intelligent control module generates a feedback signal according to the detecting signals and the main power source module adjusts the electricity signal according to the feedback signal.

Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covering the second III-V compound layer. Numerous electrodes are disposed on the insulating layer and contact the insulating layer, wherein the electrodes are positioned between the gate electrode and the drain electrode and a distribution of the electrodes decreases along a direction toward the gate electrode.

Abstract: An LED lighting device with light spectrum adjustment function, which includes a light source group, a white light color temperature adjustment switch, a red/blue light ratio adjustment switch, a controller and a constant-current control circuit. The light source group includes a red LED, a blue LED, a first white LED and a second white LED. The white light color temperature adjustment switch generates a white light color temperature control signal. The red/blue light ratio adjustment switch generates a red/blue light ratio control signal. The controller receives the white light color temperature control signal and the red/blue light ratio control signal so as to generate an integrated control signal. The constant-current control circuit outputs a driving current according to the integrated control signal to control the above LEDs in order to generate a light having a target color temperature and a target light spectrum.