Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A multi-function intelligent lighting device control system includes a plurality of lighting devices and an intelligent lighting device controller. The controller includes a detecting module, a main power source module, an intelligent control module and an intelligent dimming module. The detecting module includes a detecting circuit. The first electrode connectors of the main power source module are connected to the detecting circuit and connected to the first electrodes of the lighting devices via the detecting circuit. The common second electrode connector of the main power source module is connected to the second electrodes of the lighting devices and outputs an electricity signal to drive the lighting devices, such that the detecting circuit generates a plurality of detecting signals. The intelligent control module generates a feedback signal to perform the adaptive adjustment function accordingly. The intelligent dimming module receives a dimming signal to adjust the brightness of the lighting devices.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: An intelligent lighting device control system includes a plurality of lighting devices and an intelligent lighting device controller. The intelligent lighting device controller includes a detecting module, a main power source module and an intelligent control module. The detecting module has a detecting circuit. The main power source module includes a plurality of first electrode connectors and a common electrode connector. The first electrode connectors are connected to the detecting circuit and connected to the first electrodes of the lighting devices via the detecting circuit. The common second electrode connector is connected to the second electrodes of the lighting devices and outputs an electricity signal to drive the lighting devices, such that the detecting circuit generates a plurality of detecting signals. The intelligent control module generates a feedback signal according to the detecting signals and the main power source module adjusts the electricity signal according to the feedback signal.

Abstract: Provided is a device with a replacement spacer structure and a method for forming such a structure. The method includes forming an initial spacer structure, wherein the initial spacer structure has an initial etch rate for a selected etchant. The method further includes removing a portion of the initial spacer structure, wherein a remaining portion of the initial spacer structure is not removed. Also, the method includes forming a replacement spacer structure adjacent to the remaining portion of the initial spacer structure to form a combined spacer structure, wherein the combined spacer structure has an intermediate etch rate for the selected etchant that is less than the initial etch rate for a selected etchant. Further, the method includes etching the combined spacer structure with the selected etchant to form a final spacer structure.

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, a first recess, a second recess, a passivation layer, and an etch mask layer. The group III-V barrier layer includes a thinner portion, a first thicker portion and a second thicker portion in the active region, the thinner portion surrounds the first thicker portion, and the second thicker portion surrounds the thinner portion. The first recess is disposed in the group III-V barrier layer in the active region. The second recess is disposed in the group III-V barrier layer in the isolation region.

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: The present disclosure provides a toughened resin composition, which includes: (A) a toughened and modified compound, which includes a styrene maleic anhydride compound, an anhydride grafted olefin polymer, and a diisocyanate compound; (B) a thermosetting polymer; and (C) a toughening resin; wherein, in the toughened and modified compound, the diisocyanate compound forms a polyimide bond with the styrene maleic anhydride compound and the anhydride grafted olefin polymer, respectively. The present disclosure has high toughness and excellent mechanical properties; thus, it may have a wide range of applications in the fields of electronics, aerospace and the like.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A light sensor includes an optoelectronic device and a light guide element. The light guide element has a first light incident surface and a light exit surface, so as to allow an incident light to enter the light guide element from the first light incident surface and then exit to the optoelectronic device from the light exit surface; wherein at least one of the light incident surface and the light exit surface has a single curved surface.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: An electronic device is provided. The electronic device includes a power pin, a main circuit, and a start-up circuit. The power pin is configured to receive a power supply. The start-up circuit includes a switch coupled between the power pin and the main circuit, a timer and an oscillator. The switch is configured to selectively provide the power supply to the main circuit in response to a control signal. The oscillator, is configured to provide a periodic signal. The timer is configured to provide the control signal to turn on the switch when counting to a start-up time according to the periodic signal, so that the main circuit is configured to provide a fixed voltage according to the power supply.

Abstract: A device and a method for detecting states of a linear guideway including a sliding block and a slide rail are provided. The device includes a sensor located at a position corresponding to a side surface of the slide rail, and an analysis processer communicated with the sensor. The sensor detects the vibrating of the slide rail to generate a sensing signal. The analysis processer compares the sensing signal with at least one threshold, to determines occurrence of abnormalities. Therefore, the sensitivity for detection may be increased.

Abstract: A visual content search and retrieval platform comprising an object detection model, a coarse-grained image classification model, and a selection of fine-grained image classification models. During inference, the object detection model locates and extracts a query object in a query image; the coarse-grained image classification model classifies the query object's meta-category; the fine-grained image classification model trained and optimized for the meta-category of the query object is selected; and the selected fine-grained image classification model searches and retrieves from an image database images of objects most similar to the query object.

Abstract: The present disclosure provides a multilayer wiring structure, including a plurality of dielectric layers, a plurality of conductive wiring layers interleaved with the plurality of dielectric layers, wherein the plurality of conductive wiring layers includes copper-phosphorous alloys (such as Cu3P).

Abstract: The present disclosure provides a device for assisting agitation of liquid. The device includes a frame having a bottom and a sidewall forming an angle with the bottom; a first flexible film attached to the frame at a periphery portion of the first flexible film; a first magnetic field generator at the sidewall of the frame and adjacent to the periphery portion of the first flexible film; and a second magnetic field generator at the bottom of the frame, wherein the first magnetic field generator and the second magnetic field generator are configured to provide a magnetic field parallel to at least a portion of the first flexible film, and wherein a portion of the frame and the first flexible film are configured to be in contact with the solution.

Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The interconnect structure includes a first metal line, a first interlayer dielectric (ILD) layer over the first metal line, a first conductive feature over the first metal line, wherein at least a portion of the first conductive feature is laterally surrounded by the first ILD layer, and a sidewall of the first conductive feature has a corrugated profile.

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.