Abstract: A radar signal processing system with a self-interference cancelling function includes an analog front end (AFE) processor, an analog to digital converter (ADC), an adaptive interference canceller (AIC), and a digital to analog converter (DAC). The AFE processor receives an original input signal and generates an analog input signal. The ADC converts the analog input signal to a digital input signal. The AIC generates a digital interference signal digital interference signal by performing an adaptive interference cancellation process according to the digital input signal. The DAC converts the digital interference signal to an analog interference signal. Finally, the analog interference signal is fed back to the AFE and cancelled from the original input signal in the AFE processor while performing the front end process, reducing the interference of the static interference from the leaking of a close-by transmitter during the front end process.

Abstract: Methods, systems, and apparatuses for Sidelink Discontinuous Reception (SL DRX) in a wireless communication system to avoid ambiguity on slot offset calculations on SL DRX. A method for a UE comprises performing a SL communication associated with a destination Identity (ID), having a SL DRX configuration associated with the SL communication, wherein the SL DRX configuration comprises at least an on-duration timer and a DRX cycle, deriving a first offset associated with the SL communication based on the destination ID and the DRX cycle, deriving a second offset associated with the SL communication based on the destination ID and a number of slots per subframe, starting the on-duration timer after a time period determined based on the second offset from the beginning of a subframe, wherein the subframe is determined based on at least the first offset, and monitoring Sidelink Control Information (SCI) when the on-duration timer is running.

Abstract: A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a silicon substrate having a first surface, a III-V layer on the first surface of the silicon substrate and over a first active region, and an isolation region in a portion of the III-V layer extended beyond the first active region. The first active region is in proximal to the first surface. The method includes the following operations. A silicon substrate having a first device region and a second device region is provided, a first active region is defined in the first device region, a III-V layer is formed on the silicon substrate, an isolation region is defined across a material interface in the III-V layer by an implantation operation, and an interconnect penetrating through the isolation region is formed.

Abstract: Provided are semiconductor devices that include a first gate structure having a first end cap portion, a second gate structure having a second end cap portion coaxial with the first gate structure, a first dielectric region separating the first end cap portion and the second end cap portion, a first conductive element extending over the first gate structure, a second conductive element extending over the second gate structure, and a gate via electrically connecting the second gate structure and the second conductive element, with the first dielectric region having a first width and being positioned at least partially under the first conductive element and defines a spacing between the gate via and an end of the second end cap portion that exceeds a predetermined distance.

Abstract: The present disclosure is directed to methods and devices for devices including multiple die. A wafer is received having a plurality of die and a plurality of scribe lines. A dicing process is performed on the wafer. The dicing process includes identifying a first scribe line of the plurality of scribe lines, the first scribe line interposing a first die and a second die of the plurality of die; and performing a partial cut on the first scribe line. In embodiments, other scribe lines of the wafer are, during the dicing process, fully cut. After the dicing, the first die and the second die are mounted on a substrate such as an interposer. The first die and the second die are connected by a portion of the first scribe line, e.g., remaining from the partial cut, during the mounting.

Abstract: Systems and methods are disclosed for automatically performing motion correction in dynamic positron emission tomography scans, such as dynamic positron emission tomography myocardial perfusion imaging studies. An automated algorithm can be used. The algorithm can use simplex iterative optimization of a count-based cost-function customized to different dynamic phases for performing frame-by-frame motion correction.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: Present disclosure provides a FinFET structure, including a substrate, a fin protruding from the substrate, including a first portion and a second portion below the first portion, wherein the first portion includes a first dopant concentration of a dopant, and the second portion includes a second dopant concentration of the dopant, the second dopant concentration is greater than the first dopant concentration, a gate over the fin, wherein the second portion of the fin is below a bottom surface of the gate, and an insulating layer over the substrate and proximal to the second portion of the fin, wherein at least a first portion of the insulating layer includes a third dopant concentration of the dopant, the third dopant concentration is greater than the first dopant concentration.

Abstract: A display driving integrated circuit (IC) and a driving parameter adjustment method thereof are provided. The display driving IC includes a control circuit and a driving parameter determination circuit. The control circuit controls a current driving circuit and a scanning circuit according to a driving parameter, wherein the current driving circuit is suitable for driving multiple driving lines of a light emitting diode (LED) array, and the scanning circuit is suitable for driving multiple scanning lines of the LED array. The driving parameter determination circuit is coupled to the control circuit to provide the driving parameter. The driving parameter determination circuit dynamically adjusts the driving parameter for a target LED in the LED array according to a grayscale value of the target LED.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: An integrated circuit package includes an interposer, the interposer including: a first redistribution layer, a second redistribution layer over the first redistribution layer in a central region of the interposer, a dielectric layer over the first redistribution layer in a periphery of the interposer, the dielectric layer surrounding the second redistribution layer in a top-down view, a third redistribution layer over the second redistribution layer and the dielectric layer, and a first direct via extending through the dielectric layer. A conductive feature of the third redistribution layer is coupled to a conductive feature of the first redistribution layer through the first direct via.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: The present disclosure provides a method for manufacturing an auto-crosslinked hyaluronic acid gel, comprising conducting auto-crosslinking reaction of a colloid containing hyaluronic acid continuously at low temperature in an acidic environment, and treating the reaction product with steam at high temperature to obtain the auto-crosslinked hyaluronic acid gel with high viscosity.

Abstract: Impact-based strength and weakness determination includes receiving a plurality of industry-wide feedback items, the industry-wide feedback items pertaining to a plurality of entities associated with an industry. It further includes, based at least in part on an evaluation of the plurality of industry-wide feedback items, generating an industry-wide reputation scoring model usable to determine an expected reputation score for a typical entity in the industry based at least in part on a combination of one or more reputation score components. Generating the industry-wide reputation scoring model comprises determining (1) a baseline reputation score, and (2) an expected impact of a reputation score component on reputation scoring for the typical entity in the industry.

Abstract: Methods and apparatuses for handling partial sensing and discontinuous reception for sidelink communication to reduce potential latency due to additional sensing and to improve resource utilization efficiency. Various embodiments can comprise a first device performing sidelink communication to at least a second device, or a second device in a sidelink resource pool, and triggering to perform resource selection for a sidelink data at a timing, wherein the first device (already) receives or monitors sidelink control information for a (contiguous) time duration before the timing. The first device can perform sensing for a contiguous sensing duration after the timing, determine or select a first sidelink resource from a set of sidelink resources, and perform a first sidelink transmission on the first sidelink resource for transmitting the sidelink data to the second device.

Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: Aspects of the disclosure provide a method. The method includes forming a structure over a substrate, and forming a spacer layer on the structure, wherein the spacer layer has a recess. The method includes forming a mask layer over the spacer layer and in the recess, the mask layer including a first layer, a second layer and a third layer. The method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer to form an opening to expose the recess of the spacer layer, wherein the opening in the second layer has a first width; and. The method includes removing the second layer using a wet etchant, wherein the opening in the third layer has a second width, and the second with is greater than the first width.

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

Abstract: An illumination system including two light source modules, two light guiding modules, a first reflector, and a light homogenization element is provided. The two light guiding modules are respectively disposed on transmission paths of light beams generated by the two light source modules to generate two guiding light beams. One of the guiding light beams is reflected to the light homogenization element by the first reflector. The other of the guiding light beams is directly transmitted to the light homogenization element. The guiding light beams are emitted from the light homogenization element and form an illumination light beam. A projection apparatus is also provided.