Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

Abstract: A focus ring for a plasma-based semiconductor processing tool is designed to provide and/or ensure etch rate uniformity across a wafer during a plasma etch process. The focus ring may include an angled inner wall that is angled away from a center of the focus ring to direct a plasma toward the wafer. The angle of the angled inner wall may be greater than approximately 130 degrees relative to the top surface of the wafer and/or may be less than approximately 50 degrees relative to an adjacent lower surface of the focus ring to reduce and/or eliminate areas of overlapping plasma on the wafer (which would otherwise cause non-uniform etch rates). Moreover, an inner diameter may be configured to be in a range of approximately 209 millimeters to 214 millimeters to further reduce and/or eliminate areas of overlapping plasma on the wafer.

Abstract: A fitting for an upper brush in a double brush scrubbing chamber of a wafer cleaning system is disclosed. The fitting includes a base plate, a flanged pipe, and a threaded connector. The base plate includes a threaded hole with a stop surface therein and a channel extending from the stop surface through a lower surface of the base plate. The flanged pipe is inserted into the base plate such that the flange at the top end of a hollow tube rests on the stop surface and the hollow tube passes through the channel of the base plate. The threaded connector has a passage therethrough, and engages the threaded hole of the base plate to fix the flanged pipe in place. This structure is able to provide fluid while minimizing particle generation.

Abstract: A method is provided for fabricating a semiconductor wafer having a device side, a back side opposite the device side and an outer periphery edge. Suitably, the method includes: forming a top conducting layer on the device side of the semiconductor wafer; forming a passivation layer over the top conducting layer, the passivation layer being formed so as not to extend to the outer periphery edge of the semiconductor wafer; and forming a protective layer over the passivation layer, the protective layer being spin coated over the passivation layer so as to have a smooth top surface at least in a region proximate to the outer periphery edge of the semiconductor wafer.

Abstract: A system and method for chemical mechanical polishing (“CMP”) pad replacement on a CMP processing tool. A platen carrier having two or more platens is positioned within a platen cleaning process module. Each platen includes a CMP pad affixed thereto, and is capable of being independently rotated during operations. When a pad requires replacement, the platen carrier rotates towards a pad tearer tool, which extends and pivots to remove the used pad from the platen as the carrier rotates. A pad tape replacement module is positioned above the CMP tool with pad tape extending from a supply roll to a recycle roll. As the pad tape transits through the module, a backing of the tape is separated and recycled. A pad disposed in the pad tape is then applied to a platen via a pressure roller.

Abstract: Compounds of general formula (I): wherein R1, R2, R3, R4, R5a, R5b X1, X2, Z and Y are as defined herein are positive modulators of the calcium-activated chloride channel (CaCC), TMEM16A. The compounds are useful for treating diseases and conditions affected by modulation of TMEM16A, particularly respiratory diseases and conditions.

Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

Abstract: An electronic device includes a cover plate, a touch sensing layer, and a display module. The cover plate includes a glass layer and at least one transparent covering layer. The glass layer has a first surface and a second surface. The transparent covering layer is disposed on and in contact with at least one of the first surface or the second surface of the glass layer and is laminated with the glass layer. The touch sensing layer is disposed under the cover plate. The display module is disposed under the touch sensing layer.

Abstract: Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

Abstract: A touch panel includes a substrate, a first sensing electrode layer, and a second sensing electrode layer. The first sensing electrode layer is disposed on the substrate and includes a plurality of first-axis conductive units separated from each other. The second sensing electrode layer is disposed on the substrate and includes a plurality of second-axis conductive units separated from each other and crossing the first-axis conductive units. Each of the second-axis conductive units includes two first conductive layers and a second conductive layer laminated between the first conductive layers.

Abstract: An electronic device includes a cover plate, a touch sensing layer, and a display module. The cover plate includes a glass layer and at least one transparent covering layer. The glass layer has a first surface and a second surface. The transparent covering layer is disposed on and in contact with at least one of the first surface or the second surface of the glass layer and is laminated with the glass layer. The touch sensing layer is disposed under the cover plate. The display module is disposed under the touch sensing layer.

Abstract: A cover plate used in an electronic device includes a glass layer and at least one transparent covering layer. The glass layer has a first surface and a second surface. The transparent covering layer contacts and is disposed on at least one of the first surface and the second surface, and the transparent covering layer is laminated with the glass layer. The cover plate has a Young's modulus of about 10 GPa to about 200 GPa.

Abstract: Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.

Abstract: Compounds of general formula (I): wherein R1, R2, R3, R4, R5a, R* X1, X2, Z and Y are as defined herein are positive modulators of the calcium-activated chloride channel (CaCC), TMEM16A. The compounds are useful for treating diseases and conditions affected by modulation of TMEM16A, particularly respiratory diseases and conditions.

Abstract: A touch sensing layer includes a first-axis conductive unit, a second-axis conductive unit, and at least one dummy electrode. The first-axis conductive unit substantially extends along a first axial direction. The second-axis conductive unit substantially extends along a second axial direction and includes two conductive electrodes and a conductive bridge. The two conductive electrodes are respectively located at opposite sides of the first-axis conductive unit. The conductive bridge crosses the first-axis conductive unit and is connected to the two conductive electrodes. The dummy electrode includes at least one part located in a gap formed between the first-axis conductive unit and one of the two conductive electrodes.

Abstract: A touch sensing layer includes a first-axis conductive unit, a second-axis conductive unit, and at least one dummy electrode. The first-axis conductive unit substantially extends along a first axial direction. The second-axis conductive unit substantially extends along a second axial direction and includes two conductive electrodes and a conductive bridge. The two conductive electrodes are respectively located at opposite sides of the first-axis conductive unit. The conductive bridge crosses the first-axis conductive unit and is connected to the two conductive electrodes. The dummy electrode includes at least one part located in a gap formed between the first-axis conductive unit and one of the two conductive electrodes.

Abstract: In accordance with an example embodiment of the present invention, a method comprises allocating a control channel resource in a wireless relay transmission frame on a wireless relay link; generating a control signaling based on at least one of a resource allocation scheme, a status of the wireless relay link and a traffic condition of the wireless relay link; mapping the control signaling to the allocated control channel resource via at least one of a time-first mapping, a frequency-first mapping, and a multiplexing mapping; and transmitting the control signaling in the allocated control channel resource on the wireless relay link to at least one associated relay node.

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias electrode to generate a second mixture and exposing the workpiece to the second mixture to etch a least a portion of the material layer and to form a film on at least a portion of the material layer.

Abstract: A touch panel includes a substrate, a first sensing electrode layer, and a second sensing electrode layer. The first sensing electrode layer is disposed on the substrate and includes a plurality of first-axis conductive units separated from each other. The second sensing electrode layer is disposed on the substrate and includes a plurality of second-axis conductive units separated from each other and crossing the first-axis conductive units. Each of the second-axis conductive units includes two first conductive layers and a second conductive layer laminated between the first conductive layers.