Abstract: A lens module includes a printed circuit board; a lens mounted on one side of the printed circuit board, and a shielding cover. The shielding cover comprises a cavity. A part of the printed circuit board and a part of the lens are received in the cavity of the shielding cover. The disclosure also relates to an electronic device using the lens module. The lens module can filter the magnetic interference of the external signal and facilitate heat generated by the lens module dissipate outside.

Abstract: A process of assigning a colour grade to a diamond, including the steps of (i) determining the N3 and C-center content of a diamond (110); (ii) comparing the N3 and C-center content of the diamond with a previously acquired data set from a plurality of diamonds each having a colour grading previously assigned thereto, and (iii) assigning a colour grade to the diamond upon a correlation of the N3 and C-center content of said diamond with a grade of said previously acquired data set; wherein said previously acquired data set comprises a correlation between N3 and C center content and optical absorbance in the visible light spectrum for each diamond of said plurality of diamonds.

Abstract: In accordance with an example embodiment of the present invention, a method comprises allocating a control channel resource in a wireless relay transmission frame on a wireless relay link; generating a control signaling based on at least one of a resource allocation scheme, a status of the wireless relay link and a traffic condition of the wireless relay link; mapping the control signaling to the allocated control channel resource via at least one of a time-first mapping, a frequency-first mapping, and a multiplexing mapping; and transmitting the control signaling in the allocated control channel resource on the wireless relay link to at least one associated relay node.

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.

Abstract: Methods for processing a workpiece are provided. conducting a thermal treatment on a workpiece are provided. The workpiece contains at least one layer of metal. The method can include generating one or more species from a process gas. The process gas can include hydrogen or deuterium. The method can include filtering the one or more species to create a filtered mixture and exposing the workpiece to the filtered mixture. an oxidation process on a workpiece are provided. The method can be conducted at a process temperature of less than 350° C.

Abstract: A highly integrated, fully automatic chemiluminescence detection equipment and its operation method are disclosed. The chemiluminescence detection equipment comprises a control module, a first electrical machine, a reagent wheel disc tank, a sampling module, a washing module, a second electrical machine and a detection module. Compared with the traditional large-scale chemiluminescence detection equipment, the chemiluminescence detection equipment of the present invention has the advantage of high integration, and greatly reduces the overall volume and weight of the chemiluminescence detection equipment.

Abstract: In an embodiment, a system includes: a base with a bore hole, wherein the base is configured to secure a wafer at a first position on the base; a pin extending through the bore hole; a focus ring horizontally surrounding the wafer at the first position and extending upwardly from the base, wherein the wafer is configured to be moved vertically between the first position and a second position above the focus ring via the pin; and a slit valve above the focus ring, wherein the wafer is configured to be moved horizontally between the second position and the slit valve via a robotic arm.

Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

Abstract: A manufacturing method of touch sensors is provided. A flexible touch sensing component can be formed on a first substrate by a release layer. Next, the flexible touch sensing component is transferred to a second substrate after a releasing step. Furthermore, by the support of the second substrate, the flexible touch sensing component can be processed and then adhered a desired cover. After releasing the second substrate from the flexible touch sensing component, the touch sensor is formed.

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

Abstract: In an embodiment, a system includes: a base with a bore hole, wherein the base is configured to secure a wafer at a first position on the base; a pin extending through the bore hole; a focus ring horizontally surrounding the wafer at the first position and extending upwardly from the base, wherein the wafer is configured to be moved vertically between the first position and a second position above the focus ring via the pin; and a slit valve above the focus ring, wherein the wafer is configured to be moved horizontally between the second position and the slit valve via a robotic arm.

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias electrode to generate a second mixture and exposing the workpiece to the second mixture to etch a least a portion of the material layer and to form a film on at least a portion of the material layer.

Abstract: A lens module includes a printed circuit board; a lens mounted on one side of the printed circuit board, and a shielding cover. The shielding cover comprises a cavity. A part of the printed circuit board and a part of the lens are received in the cavity of the shielding cover. The disclosure also relates to an electronic device using the lens module. The lens module can filter the magnetic interference of the external signal and facilitate heat generated by the lens module dissipate outside.

Abstract: Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.

Abstract: Compounds of general formula (1): wherein R1, R2, R3, R4, R5a, R* X1, X2, Z and Y are as defined herein are positive modulators of the N H calcium-activated chloride channel (CaCC), TMEM16A. The compounds are useful for treating diseases and conditions affected by modulation of TMEM16A, particularly respiratory diseases and conditions.

Abstract: Compounds of general formula (I): wherein R1, R2, R3, R4, R5a, R5b X1, X2, Z and Y are as defined herein are positive modulators of the calcium-activated chloride channel (CaCC), TMEM16A. The compounds are useful for treating diseases and conditions affected by modulation of TMEM16A, particularly respiratory diseases and conditions.

Abstract: A plasma process apparatus is provided. The plasma processing apparatus includes a plasma chamber and a processing chamber. The processing chamber includes a substrate holder operable to support a substrate. The plasma processing apparatus further includes a separation grid separating the plasma chamber from the processing chamber. The separation grid includes a gas delivery system. The gas delivery system defines a channel, an inlet and a plurality of outlets in fluid communication with the inlet via the channel. The gas delivery system is configured to reduce non-uniformities associated with a treatment process performed on the substrate.

Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

Abstract: A flexible touch-sensing component is formed on a release film by support provided from a first carrier substrate and a second carrier substrate. Then, the flexible touch-sensing component can be attached onto non-planar and curved cover plates through the reloading of a third carrier substrate, so that the touch panel can be lighter and thinner, and have a lower processing cost. In addition, the flexible touch-sensing component uses a film sensor that includes a metal nanowire conductive layer. Since the silver nanowire has flexibility, the touch sensor and the touch panel in the present disclosure can be used in flexible touch-sensing devices and curved-surface touch-sensing devices. Furthermore, based on application of an adhesive reactive ink, the released touch panel can be directly attached to target carrier substrate without adding an auxiliary layer of optical glue or hydrogel glue.