Patents by Inventor Chun-Yi Wu
Chun-Yi Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12223918Abstract: A display device includes a display panel, a backlight module and a circuit. The display panel includes multiple regions. The back light module includes multiple light emitting units, and each region corresponds to at least one of the light emitting units. The circuit includes a calibration lookup table corresponding to a first light emitting unit. The calibration lookup table records a parameter and multiple duty cycles. The circuit accesses the calibration lookup table and determines an output duty cycle according to the duty cycles. The circuit determines a current value of the first light emitting unit to drive the first light emitting unit according to the output duty cycle and the parameter.Type: GrantFiled: May 1, 2024Date of Patent: February 11, 2025Assignee: Radiant Opto-Electronics CorporationInventors: Peng-Hsiang Wu, Hung-Pao Wu, Chun-Yi Sun, Jon-Hong Lin, Lian-Young Lee, Bo-Ru Huang
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Patent number: 12211966Abstract: A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.Type: GrantFiled: November 15, 2021Date of Patent: January 28, 2025Assignee: Tianjin Sanan Optoelectronics Co., Ltd.Inventors: Dongyan Zhang, Yuehua Jia, Chun-Yi Wu, Wen Liu, Jing Wang, Huan-Shao Kuo, Huiwen Li, Duxiang Wang
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Publication number: 20250030218Abstract: The present application provides an optical device and a method of fabricating the same. The optical device include a semiconductor stack structure, an anti-reflective film and a highly-reflective film. The semiconductor stack structure is configured to generate a laser beam and emit the laser beam from its front facet while receiving an electric current. The anti-reflective film is disposed on the front facet of the semiconductor stack structure and configured to increase the transmittance (reduce a reflectivity) of the front facet to the laser beam. The highly-reflective film is disposed on a rear facet of the semiconductor stack structure and is configured to reduce a loss (increase a reflectivity) of the laser beam transmitted to the rear facet. The anti-reflective film and the highly-reflective film respectively have refractive indices greater than 2, and the highly-reflective film has a thickness greater than that of the anti-reflective film.Type: ApplicationFiled: July 10, 2024Publication date: January 23, 2025Inventors: HORNG-SHYANG CHEN, THANT ZIN, HSUYING CHEN, CHUN-KO CHEN, CHIEN-KAI WANG, HAO-HSIANG TANG, NI YEH WU, SHIN-YI SHEN, RUEI-MING YANG
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Patent number: 12205855Abstract: The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.Type: GrantFiled: August 26, 2021Date of Patent: January 21, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hau-Yi Hsiao, Kuo-Ming Wu, Chun Liang Chen, Sheng-Chau Chen
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Publication number: 20250022715Abstract: Methods for fabricating semiconductor devices are provided. An exemplary method includes forming fins in a dense region and in an isolated region of a semiconductor substrate; performing a plasma dry etch process to remove a portion of at least one selected fin to form a first trench in the dense region and to remove a portion of at least one selected fin in the isolated region to form a second trench in the isolated region, wherein the plasma dry etch process includes: performing a passivation-oriented process and an etchant-oriented process; and controlling the passivation-oriented process and the etchant-oriented process to form the first trench with a desired first critical dimension and first depth and to form the second trench with a desired second critical dimension and second depth.Type: ApplicationFiled: July 10, 2023Publication date: January 16, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Ging Lin, Ya-Yi Tsai, Chun-Liang Lai, Yun-Chen WU, Shu-Yuan Ku
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Publication number: 20240429348Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.Type: ApplicationFiled: September 5, 2024Publication date: December 26, 2024Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng MENG, Yuehua JIA, Jing WANG, Chun-Yi WU, Ching-Shan TAO, Duxiang WANG
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Patent number: 12158604Abstract: An optical film, an optical film set, a backlight module and a display device are provided. The optical film includes a main body, plural first prism structures and plural second prism structures. The main body has a first optical surface and a second optical surface. The first prism structures are disposed on the first optical surface. Each of the first prism structures extends along a first direction. The second prism structures are disposed on the second optical surface. Each of the second prism structures extends along a second direction. The first direction is different from the second direction.Type: GrantFiled: January 24, 2024Date of Patent: December 3, 2024Assignee: Radiant Opto-Electronics CorporationInventors: Wei-Hsuan Chen, Chung-Yung Tai, Chun-Yi Wu
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Publication number: 20240363676Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The magnetic element has multiple sub-layers, and each sub-layer is wider than another sub-layer above it. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element, and the isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.Type: ApplicationFiled: July 9, 2024Publication date: October 31, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
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Patent number: 12095010Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.Type: GrantFiled: October 31, 2022Date of Patent: September 17, 2024Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng Meng, Yuehua Jia, Jing Wang, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
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Publication number: 20240298392Abstract: A light strip unplugging protection method includes: providing a light strip, wherein the light strip includes a plug including a power pin and a control pin; providing a socket corresponding to the plug, wherein the socket includes a power pin holder and at least one light strip control pin holder for electrically connecting with the power pin and the light strip control pin respectively; using a pulse-width modulation signal to drive the light strip on the light strip control pin holder to control the current passing therethrough; and when the pulse-width modulation signal is in a first state, detecting voltage or current of the light strip control pin holder; determining whether the light strip is unplugged according to the voltage or current; and when it is determined that the light strip is unplugged, power voltage on the power pin holder is turned off.Type: ApplicationFiled: September 22, 2023Publication date: September 5, 2024Inventors: Lian-Cheng Tsai, CHUN-YI WU
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Publication number: 20240290908Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.Type: ApplicationFiled: April 3, 2024Publication date: August 29, 2024Inventors: ChingYuan TSAI, Chun-Yi WU, Fulong LI, Duxiang WANG, Chaoyu WU, Wenhao GAO, Xiaofeng LIU, Weihuan LI, Liming SHU, Chao LIU
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Patent number: 12074193Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.Type: GrantFiled: March 30, 2023Date of Patent: August 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Cheng Chen, Wei-Li Huang, Chun-Yi Wu, Kuang-Yi Wu, Hon-Lin Huang, Chih-Hung Su, Chin-Yu Ku, Chen-Shien Chen
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Publication number: 20240234481Abstract: A method of forming a semiconductor device, the method including forming a first insulation layer over a substrate, depositing a first stack of magnetic layers over the first insulation layer, etching the first stack of magnetic layers such that a sidewall of the first stack of magnetic layers forms a stairstep pattern, forming a first photosensitive layer over the first stack of magnetic layers, the first insulation layer, and the substrate, wherein a thickness of the first photosensitive layer above a center of a first step of the stairstep pattern is different from a thickness of the first photosensitive layer above a center of a second step of the stairstep pattern, forming a first conductive feature over the first photosensitive layer, depositing a second insulation layer over the first photosensitive layer and the first conductive feature, and depositing a second magnetic layer over the second insulation layer.Type: ApplicationFiled: January 6, 2023Publication date: July 11, 2024Inventors: Szu-Shu Yang, Chun Yi Wu, Kai Tzeng, Yuh-Sen Chang, Chi-Cheng Chen, Chi-Chun Peng
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Publication number: 20240168217Abstract: An optical film, an optical film set, a backlight module and a display device are provided. The optical film includes a main body, plural first prism structures and plural second prism structures. The main body has a first optical surface and a second optical surface. The first prism structures are disposed on the first optical surface. Each of the first prism structures extends along a first direction. The second prism structures are disposed on the second optical surface. Each of the second prism structures extends along a second direction. The first direction is different from the second direction.Type: ApplicationFiled: January 24, 2024Publication date: May 23, 2024Inventors: Wei-Hsuan CHEN, Chung-Yung TAI, Chun-Yi WU
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Patent number: 11973163Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.Type: GrantFiled: January 20, 2023Date of Patent: April 30, 2024Assignee: Tianjin Sanan Optoelectronics Co., Ltd.Inventors: ChingYuan Tsai, Chun-Yi Wu, Fulong Li, Duxiang Wang, Chaoyu Wu, Wenhao Gao, Xiaofeng Liu, Weihuan Li, Liming Shu, Chao Liu
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Patent number: 11960111Abstract: An optical film, an optical film set, a backlight module and a display device are provided. The optical film includes a main body, plural first prism structures and plural second prism structures. The main body has a first optical surface and a second optical surface. The first prism structures are disposed on the first optical surface. Each of the first prism structures extends along a first direction. The second prism structures are disposed on the second optical surface. Each of the second prism structures extends along a second direction. The first direction is different from the second direction.Type: GrantFiled: November 16, 2022Date of Patent: April 16, 2024Assignee: Radiant Opto-Electronics CorporationInventors: Wei-Hsuan Chen, Chung-Yung Tai, Chun-Yi Wu
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Patent number: 11908885Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element.Type: GrantFiled: May 9, 2022Date of Patent: February 20, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chin-Yu Ku, Chi-Cheng Chen, Hon-Lin Huang, Wei-Li Huang, Chun-Yi Wu, Chen-Shien Chen
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Publication number: 20240042166Abstract: A semiconductor light-emitting device includes a bonding substrate, a multi-layered metal unit, and a semiconductor lighting unit. The bonding substrate includes an upper surface and a lower surface opposite to the upper surface. The multi-layered metal unit is disposed on the upper surface of the bonding substrate such that an exposed region of the upper surface of the bonding substrate is exposed from the multi-layered metal unit. The semiconductor lighting unit is disposed on the multi-layered metal unit opposite to the bonding substrate. A method for manufacturing the semiconductor light-emitting device is also disclosed.Type: ApplicationFiled: October 20, 2023Publication date: February 8, 2024Inventors: Weifan KE, Chun-Yi WU, Bing-xian CHUNG
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Publication number: 20240004123Abstract: An optical film comprises a light incident side and a light emitting side opposite to the light incident side. A plurality of light incident microstructures are formed on the light incident side, and the light incident microstructures are tapered structures. According to the structural design of the light incident microstructures of the optical film, the light field of a light source can be expanded to achieve the purpose of emitting light at a specific angle. The invention also provides a backlight module and a display device including the optical film.Type: ApplicationFiled: September 5, 2023Publication date: January 4, 2024Applicant: Radiant Opto-Electronics CorporationInventors: Wei-Hsuan CHEN, Chung-Yung TAI, Wen-Hao CAI, Chun-Yi WU
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Publication number: 20230413599Abstract: A flip-chip light emitting diode includes a light-emitting epitaxial laminated layer having a first surface, and a second surface opposing the first surface, and including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein the first surface is a roughened surface; a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer and bonded with a transparent substrate; and a first electrode and a second electrode respectively over a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer.Type: ApplicationFiled: September 6, 2023Publication date: December 21, 2023Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.Inventors: Wei-ping XIONG, Shu-Fan YANG, Chun-Yi WU, Chaoyu WU