Patents by Inventor Chun-Yi Wu

Chun-Yi Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200194624
    Abstract: A micro light-emitting diode (LED) includes an epitaxial layered structure including a support layer, a first-type semiconductor element, an active layer, and a second-type semiconductor element that are sequentially disposed on one another in such order. A method for manufacturing a micro LED device including at least one of the micro LED is also disclosed.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 18, 2020
    Inventors: Cuicui SHENG, Chun Kai HUANG, Chun-Yi WU
  • Patent number: 10672953
    Abstract: A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1> 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: June 2, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Weiping Xiong, Shu-fan Yang, Meijia Yang, Chun-Yi Wu, Chaoyu Wu, Duxiang Wang
  • Patent number: 10673003
    Abstract: A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: June 2, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Shu-fan Yang, Chun-Yi Wu, Chaoyu Wu, Duxiang Wang
  • Publication number: 20200125823
    Abstract: Methods and systems for detecting objects from aerial imagery are disclosed. The method includes obtaining an image of an area, obtaining a plurality of regional aerial images from the image of the area, classifying the plurality of regional aerial images as a first class or a second class by a classifier, wherein: the first class indicates a regional aerial image contains a target object, the second class indicates a regional aerial image does not contain a target object, and the classifier is trained by first and second training data, wherein the first training data include first training images containing target objects, and the second training data include second training images containing target objects obtained by adjusting at least one of brightness, contrast, color saturation, resolution, or a rotation angle of the first training images; and recognizing a target object in a regional aerial image in the first class.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 23, 2020
    Applicant: GEOSAT Aerospace & Technology
    Inventors: Cheng-Fang LO, Zih-Siou CHEN, Chang-Rong KO, Chun-Yi WU, Ya-Wen CHENG, Kuang-Yu CHEN, Hsiu-Hsien WEN, Te-Che LIN, Ting-Jung CHANG
  • Publication number: 20200119224
    Abstract: A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: JINGFENG BI, CHAOYU WU, DUXIANG WANG, SENLIN LI, CHUN-YI WU, SHIH-YI LIEN
  • Publication number: 20200075448
    Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.
    Type: Application
    Filed: June 5, 2019
    Publication date: March 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
  • Publication number: 20200066940
    Abstract: A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1>1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.
    Type: Application
    Filed: October 29, 2019
    Publication date: February 27, 2020
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Weiping XIONG, Shu-fan YANG, Meijia YANG, Chun-Yi WU, Chaoyu WU, Duxiang WANG
  • Publication number: 20200051284
    Abstract: An object attribution analyzing method applied to an object attribution analyzing device and includes dividing a plurality of continuous frames into a current frame and several previous frames, utilizing face detection to track and compute a first attribution predicted value of an object within the current frame, utilizing the face detection to acquire a feature parameter of the object within the current frame for setting a first weighting, acquiring a second attribution predicted value of the object within the several previous frames, setting a second weighting in accordance with the first weighting, and generating a first induction attribution predicted value of the object within the plurality of continuous frames via the first attribution predicted value weighted by the first weighting and the second attribution predicted value weighted by the second weighting.
    Type: Application
    Filed: July 29, 2019
    Publication date: February 13, 2020
    Inventors: Kuan-Yu Lin, Chun-Yi Wu, Sheng-Yuan Chen
  • Patent number: 10546195
    Abstract: Methods and systems for detecting objects from aerial imagery are disclosed. According to certain embodiments, the method may include obtaining a Digital Surface Model (DSM) image of an area. The method may also include obtaining a DSM image of one or more target objects. The method may further include detecting the target object in the area based on the DSM images of the area and the one or more target objects. The method may further include recognizing the detected target objects by artificial intelligence. The method may further include acquiring the positions of the recognized target objects. The method may further include calculating the number of the recognized target objects.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: January 28, 2020
    Assignee: GEOSTAT AEROSPACE & TECHNOLOGY INC.
    Inventors: Cheng-Fang Lo, Zih-Siou Chen, Chang-Rong Ko, Chun-Yi Wu
  • Publication number: 20200020826
    Abstract: A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Inventors: SENLIN LI, JINGFENG BI, CHUN KAI HUANG, JIN WANG, SHIH-YI LIEN, CHUN-YI WU, DUXIANG WANG
  • Publication number: 20200020840
    Abstract: A micro device includes a securing layer, a plurality of micro device units that are separated from each other and that are spaced apart from the securing layer, and a connecting layer that interconnects the micro device units in at least one group of two or more and that is connected to the securing layer so that the micro device units are connected to the securing layer through the connecting layer. A method of making the micro device is also provided.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Inventors: Cuicui SHENG, Duxiang WANG, Bing-Xian CHUNG, Chun-Yi WU, Chaoyu WU
  • Publication number: 20200006465
    Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.
    Type: Application
    Filed: January 29, 2019
    Publication date: January 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Yu KU, Chi-Cheng CHEN, Hon-Lin HUANG, Wei-Li HUANG, Chun-Yi WU, Chen-Shien CHEN
  • Patent number: 10522713
    Abstract: A light-emitting diode includes an epitaxial-laminated layer, including an n-type ohmic contact layer; a first n-type transition layer; a second n-type transition layer; an n-type confinement layer; an active layer; a p-type confinement layer; a p-type window layer; a first electrode over an upper surface of the epitaxial-laminated layer; and a conductive substrate located over a bottom surface of the epitaxial-laminated layer.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: December 31, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Guanying Huang, Chun-Yi Wu, Chaoyu Wu, Duxiang Wang
  • Patent number: 10497837
    Abstract: A flip-chip light-emitting diode chip with a patterned transparent bonding layer includes: an epitaxial laminated layer, having an upper surface and a lower surface opposite to each other, which further includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer. Part of the n-type semiconductor layer and the active layer are etched to expose part of the p-type semiconductor layer. A first electrode is over the surface of the n-type semiconductor layer, and a second electrode is over the surface of the exposed p-type semiconductor layer. A transparent medium layer over the upper surface of the epitaxial laminated layer, wherein the upper surface is provided with a grid-shaped or array-shaped recess region. A patterned transparent bonding medium layer fills up the recess region of the transparent medium layer, and the upper surface is at the same plane with the upper surface of the transparent medium layer.
    Type: Grant
    Filed: December 31, 2017
    Date of Patent: December 3, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Weiping Xiong, Shu-fan Yang, Meijia Yang, Chun-Yi Wu, Chaoyu Wu, Duxiang Wang
  • Publication number: 20190348572
    Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.
    Type: Application
    Filed: July 25, 2019
    Publication date: November 14, 2019
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Cheng MENG, Yuehua JIA, Jing WANG, Chun-Yi WU, Ching-Shan TAO, Duxiang WANG
  • Patent number: 10446718
    Abstract: A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.
    Type: Grant
    Filed: November 11, 2017
    Date of Patent: October 15, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jin Wang, Yi-an Lu, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
  • Patent number: 10411163
    Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: September 10, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Cheng Meng, Yuehua Jia, Jing Wang, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
  • Patent number: 10411165
    Abstract: An invisible-light light-emitting diode includes an N-type ohmic contact semiconductor layer, an N-type current spreading layer, an N—GaAs visible-light absorption layer, an N-type cladding layer, a light-emitting layer, a P-type cladding layer and a P-type ohmic contact semiconductor layer. In the invisible-light light-emitting diode, the absorption layer is GaAs, which can effectively remove all visible light when current density is >1 A/mm2, and essentially all visible light when current density is below 3 A/mm2. This effectively solves the red dot effect of invisible-light light-emitting diodes.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: September 10, 2019
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Chaoyu Wu, Chun-Yi Wu, Chun Kai Huang, Duxiang Wang
  • Publication number: 20190267561
    Abstract: A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.
    Type: Application
    Filed: May 10, 2019
    Publication date: August 29, 2019
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Shu-fan YANG, Chun-Yi WU, Chaoyu WU, Duxiang WANG
  • Patent number: 10367120
    Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer with an upper surface; an ohmic contact layer over the light-emitting epitaxial laminated layer; an expanding electrode over the ohmic contact layer; a transparent insulating layer that covers the expanding electrode and the exposed ohmic contact layer, having a hole through the transparent insulating layer in a position corresponding to the expanding electrode; and a welding wire electrode over the transparent insulating layer and coupled to the expanding electrode via the hole.
    Type: Grant
    Filed: November 10, 2018
    Date of Patent: July 30, 2019
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Cheng Meng, Yian Lu, Chun-Yi Wu, Duxiang Wang