Abstract: A method of forming dice includes the following steps. First, a wafer structure is provides, which includes a substrate and a stack of semiconductor layers disposed in die regions and a scribe line region. Then, the substrate and the stack of the semiconductor layers in the scribe line region are removed to forma groove in the substrate. After the formation of the groove, the substrate is further thinned to obtain the substrate with a reduced thickness. Finally, a separation process is performed on the substrate with the reduced thickness.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is disposed on the base. The compound semiconductor layer is disposed on the seed layer. The gate structure is disposed on the compound semiconductor layer. The source structure and the drain structure are disposed on both sides of the gate structure. In addition, the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is disposed on the base. The compound semiconductor layer is disposed on the seed layer. The gate structure is disposed on the compound semiconductor layer. The source structure and the drain structure are disposed on both sides of the gate structure. In addition, the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base.

Abstract: A face mask structure and a method of manufacturing the same are provided. The face mask structure includes a main structure layer and an elastic structure layer. The elastic structure layer is disposed on a surface layer of the main structure layer so as to fully cover the surface layer. The elastic structure layer includes an elastic ear strap layer partially separatably disposed on the surface layer of the main structure layer, the elastic ear strap layer includes two elastic ear strap portions separatably connected with each other through a tear-off line. Each of the two elastic ear strap portions has two opposite ends separated from each other. After the two elastic ear strap portions are separated from each other by ripping or tearing along the tear-off line, two ears of a user can respectively wear the two elastic ear strap portions when using the face mask structure.

Abstract: A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

Abstract: Provided are a light-emitting diode and a manufacturing method thereof, comprising: a luminescent epitaxial layer, comprising a first semiconductor layer (110), a light-emitting layer (120) and a second semiconductor layer (130) from bottom to top in sequence; a transparent dielectric layer (200), at least formed on the second semiconductor layer (130), the transparent dielectric layer (200) has a platform (210) and a series of openings (220); the transparent dielectric layer (200) has an ohmic contact layer (310) in the opening (220), a transition layer (320) is provided between the ohmic contact layer (310) and the second semiconductor layer (130).

Abstract: A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

Abstract: A micro light-emitting device includes a micro light-emitting diode and a light-emitting structure. The micro light-emitting diode includes a semiconductor light-emitting unit that emits an excitation light having a first wavelength. The light-emitting structure is disposed on the micro light-emitting diode, and is configured to be excited by the excitation light to emit an excited light having a second wavelength. The light-emitting structure is a multiple quantum well structure. A display including the micro light-emitting device is also disclosed.

Abstract: A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Abstract: A semiconductor light-emitting device includes a bonding substrate, a multi-layered metal unit, and a semiconductor lighting unit. The bonding substrate includes an upper surface and a lower surface opposite to the upper surface. The multi-layered metal unit is disposed on the upper surface of the bonding substrate such that an exposed region of the upper surface of the bonding substrate is exposed from the multi-layered metal unit. The semiconductor lighting unit is disposed on the multi-layered metal unit opposite to the bonding substrate. A method for manufacturing the semiconductor light-emitting device is also disclosed.

Abstract: An object attribution analyzing method applied to an object attribution analyzing device and includes dividing a plurality of continuous frames into a current frame and several previous frames, utilizing face detection to track and compute a first attribution predicted value of an object within the current frame, utilizing the face detection to acquire a feature parameter of the object within the current frame for setting a first weighting, acquiring a second attribution predicted value of the object within the several previous frames, setting a second weighting in accordance with the first weighting, and generating a first induction attribution predicted value of the object within the plurality of continuous frames via the first attribution predicted value weighted by the first weighting and the second attribution predicted value weighted by the second weighting.

Abstract: A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 ?m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

Abstract: A semiconductor device is provided. The semiconductor device includes a channel layer disposed over a substrate, a barrier layer disposed over the channel layer, a compound semiconductor layer disposed over the barrier layer, a gate electrode disposed over the compound semiconductor layer, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. The source electrode and the drain electrode penetrate through at least a portion of the barrier layer. The semiconductor device also includes a source field plate connected to the source electrode through a source contact. The semiconductor device further includes a first electric field redistribution pattern disposed on the barrier layer and directly under the edge of the source field plate.

Abstract: A slide roller is provided. A lower connecting surface of the roller is never in contact with a roller passage surface. By taking advantage of a normal distance between a corner sliding surface and a center point of the roller greater than a vertical distance between an upper sliding surface of the roller and the center point, a pulley disc assembly can be started lightly, the acceleration in the middle stage of the slide stroke is increased, and speed transmission in the rear stage of the slide stroke is increased.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

Abstract: A method of fabricating an LED includes: providing an epitaxial structure having a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; forming an extended electrode and performing thermal treatment to form ohmic contact with the second-type semiconductor layer; providing a temporary substrate bonded with the epitaxial structure, and removing the growth substrate to expose the surface of the first-type semiconductor layer; forming an ohmic contact layer, a mirror layer and a bonding layer over the exposed surface of the first-type semiconductor layer; providing a conductive substrate bonded with the bonding layer, and removing the temporary substrate to expose part of the surface of the second-type semiconductor layer and the extended electrode; forming a roughening surface via etching of the exposed second-type semiconductor layer; and providing a bonding wire electrode forming a closed loop with the extended electrode.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.