Abstract: The present disclosure discloses tribenzotriquinacene with an axial aryl group and a method for preparing the same. The triphenyltripentacene has a structure shown in formula (1): R1 and R2 are independently hydrogen, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C1-C12 fluoroalkyl group, a C1-C12 fluorine-containing alkoxy group, a C1-C12 ester group, a halogen group, a nitro group, an amine group, a cyano group, or a hydroxy group.

Abstract: Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a device region, an inner ring surrounding the device region, an outer ring surrounding the inner ring, a first corner area between an outer corner of the inner ring and an inner corner of the outer ring, and a second corner area disposed at an outer corner of the outer ring. The first corner area includes a first active region including a channel region and a source/drain region, a first gate structure over the channel region of the first active region, and a first source/drain contact over the source/drain region of the first active region. The first source/drain contact continuously extends from a first edge of the first corner area to a second edge of the first corner area.

Abstract: Integrated circuit (IC) chips are provided. An IC chip according to the present corner area between an outer corner of the device region and an inner corner of the ring region. The ring region includes a first active region extending along a first direction, a first source/drain contact disposed partially over the first active region and extending along the first direction, and first gate structures disposed completely over the first active region and each extending lengthwise along the first direction. The corner area includes a second active region extending along a second direction that forms an acute angle with the first direction, a second source/drain contact disposed partially over the second active region and extending along the second direction, and second gate structures disposed over the second active region and each extending along the first direction.

Abstract: A semiconductor structure includes a substrate, a circuit region, and a seal ring surrounding the circuit region. The circuit region includes two first source/drains, first semiconductor layers connecting the two first source/drains, and a first gate disposed between the two first source/drains and wrapping around each of the first semiconductor layers. The seal ring includes two epitaxially grown semiconductor structures, second semiconductor layers, third semiconductor layers, and a second gate. The second and the third semiconductor layers are alternately stacked one over another to form a stack of layers. A topmost layer of the stack is one of the third semiconductor layers. The second gate is disposed between the two epitaxially grown semiconductor structures and above the topmost layer of the stack. The first and the third semiconductor layers include a first semiconductor material. The second semiconductor layers include a second semiconductor material different from the first semiconductor material.

Abstract: A driving method includes the following steps. An input image is divided into a plurality of image blocks. A plurality of pixel groups corresponding to the image blocks are respectively controlled. Step of controlling a corresponding one of the pixel groups corresponding to one of the image blocks includes the following steps. A plurality of input grayscale values included in one of the image blocks are mapped to a plurality of duty cycles. One of the duty cycles is determined as a desired duty cycle. A plurality of the input grayscale values are mapped to a plurality of data voltages according to the desired duty cycle. A plurality of pixel circuits included in the one of the pixel groups are driven according to the desired duty cycle and the data voltages.

Abstract: A semiconductor structure includes a circuit region and a seal ring region. The seal ring region includes a stack of first and second semiconductor layers alternately stacked. The stack forms a continuous ring surrounding the circuit region. A gate structure is disposed on a top surface of the stack. A contour of a top surface of the gate structure is fully within a contour of the top surface of the stack in a top view of the semiconductor structure.

Abstract: The present disclosure provides a semiconductor structure that includes dielectric layers disposed over a semiconductor substrate; and a seal ring structure formed in the dielectric layers and distributed in multiple metal layers. The seal ring structure further includes first metal lines of a metal layer disposed in a first area and longitudinally oriented along a first direction; second metal lines of the metal layer disposed in a second area and longitudinally oriented along the first direction; and metal bars of the metal layer disposed in the first area and longitudinally oriented along a second direction, the metal bars connecting the first metal lines.

Abstract: A modular heat exchanger includes: two finned heat sinks, each finned heat sink has multiple guiding plates and a mounting recess; a securing assembly for securing the two finned heat sinks; a heat conduction pipe mounted in the mounting recesses; multiple modular blocks linearly arranged, and each modular block has multiple inlet through holes and multiple outlet through holes; multiple water pipes, each water pipe has two ends mounted through the inlet through holes and the outlet through holes respectively; and multiple coolers mounted to an outer sidewall defined on at least one of the modular blocks. It is convenient to assemble, disassemble or expand the modular heat exchanger, so as to improve performance of the modular heat exchanger. When one of the coolers fails, it is able to reach and detach said failed cooler by disassembling some parts of the modular heat exchanger, which is convenient.

Abstract: A semiconductor structure according to the present disclosure includes a circuit region disposed over a substrate and a seal ring region disposed over the substrate and completely surrounding the circuit region. The circuit region includes first fins, second fins, n-type epitaxial structures over the first fins, and p-type epitaxial structures over the second fins. The seal ring region includes fin rings extending completely around the circuit region, epitaxial rings disposed over and extending parallel to the fin rings. All of the epitaxial rings over all of the fin rings in the seal ring region are p-type epitaxial rings.

Abstract: A power connection assembly includes a housing, a plug, and a first and a second conductive member. The housing has a first opening. The plug is disposed in the housing, and includes a first rotating base, and a first and a second electrode terminal. The first rotating base is movably fitted into the first opening. The first and the second electrode terminal penetrate through the first rotating base to form a first and a second contact portion. The first conductive member includes a first clamping portion that includes two second elastic sheets. Each second elastic sheet has a first and a second elastic segment. The first elastic segment is L-shaped, and the second elastic segment is cylindrical. The second elastic segments of the two second elastic sheets are configured to clamp the first electrode terminal, so that the first electrode terminal electrically contacts the first conductive member.

Abstract: Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a device region, an inner ring surrounding the device region, an outer ring surrounding the inner ring, a first corner area between an outer corner of the inner ring and an inner corner of the outer ring, and a second corner area disposed at an outer corner of the outer ring. The first corner area includes a first active region including a channel region and a source/drain region, a first gate structure over the channel region of the first active region, and a first source/drain contact over the source/drain region of the first active region. The first source/drain contact continuously extends from a first edge of the first corner area to a second edge of the first corner area.

Abstract: A method includes providing a structure having a substrate and first and second semiconductor layers alternately stacked one over another above the substrate, etching the first and the second semiconductor layers to form a first continuous ring in a seal ring region of the structure, and forming an isolation structure adjacent the first continuous ring in the seal ring region. The method further includes forming a dummy gate structure that is disposed directly above the first continuous ring and completely within a boundary of the first continuous ring from a top view, growing first and second epitaxial features sandwiching the dummy gate structure, removing the dummy gate structure, resulting in a gate trench that exposes a topmost layer of the first semiconductor layers and does not expose side surfaces of the first and second semiconductor layers, and depositing a gate structure in the gate trench.

Abstract: Disclosed are systems and methods to detect and identify vehicular anomalies. Techniques to detect and identify the vehicular anomalies include receiving signals from various sensors, grouping the signals into detection sets, detecting anomalies by a comparison to vehicle behavior models, and cross-referencing the detection sets with each other to narrow down and identify the source of the anomaly. The detection sets may be grouped such that facets of vehicle maneuverability are captured and cover causal relations between different maneuverability mechanisms.

Abstract: A semiconductor structure according to the present disclosure includes a circuit region disposed over a substrate and a seal ring region disposed over the substrate and completely surrounding the circuit region. The circuit region includes first fins, second fins, n-type epitaxial structures over the first fins, and p-type epitaxial structures over the second fins. The seal ring region includes fin rings extending completely around the circuit region, epitaxial rings disposed over and extending parallel to the fin rings. All of the epitaxial rings over all of the fin rings in the seal ring region are p-type epitaxial rings.

Abstract: The invention relates to an apparatus for searching for logical address ranges of host commands. The first comparator outputs logic “0” to the NOR gate when a first end logical address is not smaller than a second start logical address. The second comparator outputs logic “0” to the NOR gate when a second end logical address is not smaller than a first start logical address. The NOR gate outputs logic “1” to a matching register and an output circuitry when receiving logic “0” from both the first and the second comparators. The output circuitry outputs a memory address of a random access memory (RAM) storing a second logical address range from the second start logical address to the second end logical address to a resulting address register when receiving logic “1” from the NOR gate.

Abstract: Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes an interconnect structure that includes a first metal line, a second metal line, a third metal line, a fourth metal line, and a fifth meal line extending along a first direction, a first group of lateral connectors disposed between the second metal line and the third metal line or between the fourth metal line and the fifth metal line, and a second group of lateral connectors disposed between the first metal line and the second metal line or between the third metal line and the fourth metal line.

Abstract: The present disclosure provides a semiconductor structure that includes a substrate having a circuit region and a seal ring region around the circuit region, first active regions of a first width disposed in the circuit region, second active regions of a second width disposed in the seal ring region, first gate structures disposed on the first active regions, and second gate structures disposed on longitudinal edges of the second active regions. The first gate structures are longitudinally oriented to be orthogonal with the first active regions. The second gate structures are longitudinally oriented to be in parallel with the second active regions. The second width is greater than the first width.

Abstract: The present disclosure provides a calibration method and readable computer storage medium. The calibration method includes: configuring a reference signal source to output a reference signal; delaying the reference signal through a delay chain to output a delay signal; synchronous sampling the reference signal and the delay signal; adding 1 count and obtaining a final count value when the sampling result is in the preset state; determining whether a ratio between the count value and the first quantity is within a preset range; obtaining the average delay time according to the time width of the reference signal wave and the number of the delay units opened in the delay chain when the ratio is within the preset range; and outputting a control signal to the clock recovery circuit according to the average delay time to calibrate the delay time of the clock recovery circuit.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.