Abstract: A modular heat exchanger includes: two finned heat sinks, each finned heat sink has multiple guiding plates and a mounting recess; a securing assembly for securing the two finned heat sinks; a heat conduction pipe mounted in the mounting recesses; multiple modular blocks linearly arranged, and each modular block has multiple inlet through holes and multiple outlet through holes; multiple water pipes, each water pipe has two ends mounted through the inlet through holes and the outlet through holes respectively; and multiple coolers mounted to an outer sidewall defined on at least one of the modular blocks. It is convenient to assemble, disassemble or expand the modular heat exchanger, so as to improve performance of the modular heat exchanger. When one of the coolers fails, it is able to reach and detach said failed cooler by disassembling some parts of the modular heat exchanger, which is convenient.

Abstract: A semiconductor structure according to the present disclosure includes a circuit region disposed over a substrate and a seal ring region disposed over the substrate and completely surrounding the circuit region. The circuit region includes first fins, second fins, n-type epitaxial structures over the first fins, and p-type epitaxial structures over the second fins. The seal ring region includes fin rings extending completely around the circuit region, epitaxial rings disposed over and extending parallel to the fin rings. All of the epitaxial rings over all of the fin rings in the seal ring region are p-type epitaxial rings.

Abstract: A power connection assembly includes a housing, a plug, and a first and a second conductive member. The housing has a first opening. The plug is disposed in the housing, and includes a first rotating base, and a first and a second electrode terminal. The first rotating base is movably fitted into the first opening. The first and the second electrode terminal penetrate through the first rotating base to form a first and a second contact portion. The first conductive member includes a first clamping portion that includes two second elastic sheets. Each second elastic sheet has a first and a second elastic segment. The first elastic segment is L-shaped, and the second elastic segment is cylindrical. The second elastic segments of the two second elastic sheets are configured to clamp the first electrode terminal, so that the first electrode terminal electrically contacts the first conductive member.

Abstract: Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a device region, an inner ring surrounding the device region, an outer ring surrounding the inner ring, a first corner area between an outer corner of the inner ring and an inner corner of the outer ring, and a second corner area disposed at an outer corner of the outer ring. The first corner area includes a first active region including a channel region and a source/drain region, a first gate structure over the channel region of the first active region, and a first source/drain contact over the source/drain region of the first active region. The first source/drain contact continuously extends from a first edge of the first corner area to a second edge of the first corner area.

Abstract: A method includes providing a structure having a substrate and first and second semiconductor layers alternately stacked one over another above the substrate, etching the first and the second semiconductor layers to form a first continuous ring in a seal ring region of the structure, and forming an isolation structure adjacent the first continuous ring in the seal ring region. The method further includes forming a dummy gate structure that is disposed directly above the first continuous ring and completely within a boundary of the first continuous ring from a top view, growing first and second epitaxial features sandwiching the dummy gate structure, removing the dummy gate structure, resulting in a gate trench that exposes a topmost layer of the first semiconductor layers and does not expose side surfaces of the first and second semiconductor layers, and depositing a gate structure in the gate trench.

Abstract: Disclosed are systems and methods to detect and identify vehicular anomalies. Techniques to detect and identify the vehicular anomalies include receiving signals from various sensors, grouping the signals into detection sets, detecting anomalies by a comparison to vehicle behavior models, and cross-referencing the detection sets with each other to narrow down and identify the source of the anomaly. The detection sets may be grouped such that facets of vehicle maneuverability are captured and cover causal relations between different maneuverability mechanisms.

Abstract: A semiconductor structure according to the present disclosure includes a circuit region disposed over a substrate and a seal ring region disposed over the substrate and completely surrounding the circuit region. The circuit region includes first fins, second fins, n-type epitaxial structures over the first fins, and p-type epitaxial structures over the second fins. The seal ring region includes fin rings extending completely around the circuit region, epitaxial rings disposed over and extending parallel to the fin rings. All of the epitaxial rings over all of the fin rings in the seal ring region are p-type epitaxial rings.

Abstract: The invention relates to an apparatus for searching for logical address ranges of host commands. The first comparator outputs logic “0” to the NOR gate when a first end logical address is not smaller than a second start logical address. The second comparator outputs logic “0” to the NOR gate when a second end logical address is not smaller than a first start logical address. The NOR gate outputs logic “1” to a matching register and an output circuitry when receiving logic “0” from both the first and the second comparators. The output circuitry outputs a memory address of a random access memory (RAM) storing a second logical address range from the second start logical address to the second end logical address to a resulting address register when receiving logic “1” from the NOR gate.

Abstract: Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes an interconnect structure that includes a first metal line, a second metal line, a third metal line, a fourth metal line, and a fifth meal line extending along a first direction, a first group of lateral connectors disposed between the second metal line and the third metal line or between the fourth metal line and the fifth metal line, and a second group of lateral connectors disposed between the first metal line and the second metal line or between the third metal line and the fourth metal line.

Abstract: The present disclosure provides a semiconductor structure that includes a substrate having a circuit region and a seal ring region around the circuit region, first active regions of a first width disposed in the circuit region, second active regions of a second width disposed in the seal ring region, first gate structures disposed on the first active regions, and second gate structures disposed on longitudinal edges of the second active regions. The first gate structures are longitudinally oriented to be orthogonal with the first active regions. The second gate structures are longitudinally oriented to be in parallel with the second active regions. The second width is greater than the first width.

Abstract: The present disclosure provides a calibration method and readable computer storage medium. The calibration method includes: configuring a reference signal source to output a reference signal; delaying the reference signal through a delay chain to output a delay signal; synchronous sampling the reference signal and the delay signal; adding 1 count and obtaining a final count value when the sampling result is in the preset state; determining whether a ratio between the count value and the first quantity is within a preset range; obtaining the average delay time according to the time width of the reference signal wave and the number of the delay units opened in the delay chain when the ratio is within the preset range; and outputting a control signal to the clock recovery circuit according to the average delay time to calibrate the delay time of the clock recovery circuit.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

Abstract: The present invention relates to a layered catalytic article, particularly useful for three-way conversion, which comprises a) atop layer comprising a palladium (Pd) component, a platinum (Pt) component and a rhodium (Rh) component, wherein the palladium component, the platinum component and the rhodium component are present in supported forms, and wherein at least part of the platinum component and at least part of the rhodium component are supported together on one or more supports; b) a bottom layer comprising a palladium component in a supported form as the only platinum group metal component; and c) a substrate, on which the top layer and bottom layer are carried, wherein the palladium components are loaded in the top layer and in the bottom layer at a ratio of higher than 1:1, calculated as palladium element, and also to an exhaust treatment system comprising the same.

Abstract: The invention relates to an apparatus for searching for logical address ranges of host commands. The first comparator outputs logic “0” to the NOR gate when a first end logical address is not smaller than a second start logical address. The second comparator outputs logic “0” to the NOR gate when a second end logical address is not smaller than a first start logical address. The NOR gate outputs logic “1” to a matching register and an output circuitry when receiving logic “0” from both the first and the second comparators. The output circuitry outputs a memory address of a random access memory (RAM) storing a second logical address range from the second start logical address to the second end logical address to a resulting address register when receiving logic “1” from the NOR gate.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

Abstract: The present disclosure provides a calibration method and readable computer storage medium. The calibration method includes: configuring a reference signal source to output a reference signal; delaying the reference signal through a delay chain to output a delay signal; synchronous sampling the reference signal and the delay signal; adding 1 count and obtaining a final count value when the sampling result is in the preset state; determining whether a ratio between the count value and the first quantity is within a preset range; obtaining the average delay time according to the time width of the reference signal wave and the number of the delay units opened in the delay chain when the ratio is within the preset range; and outputting a control signal to the clock recovery circuit according to the average delay time to calibrate the delay time of the clock recovery circuit.

Abstract: A signal processing system includes a first transceiver unit, a second transceiver unit, a protocol analysis circuit, a system chip, and a network unit. The first transceiver unit can transceive a first optical signal and a first electrical signal. The second transceiver unit can transceive a second optical signal and a second electrical signal. The protocol analysis circuit can process the first electrical signal and an analysis signal related to the first optical signal. The system chip can process the analysis signal, the second electrical signal, a first operation signal and a second operation signal. The network unit can transceive the first operation signal and the second operation signal, and transceive a first network signal and a second network signal between the network unit and a user device. The system chip and the network unit can process signals related to the first optical signal and the second optical signal.

Abstract: A control method of a robotic arm is provided. The control method includes: setting a detection circuit, a comparing circuit and a switching circuit. The detection circuit detects the motion of the robotic arm to generate a detection signal. The comparing circuit compares the detection signal with a low threshold region and compares the detection signal with a high threshold region to generate a comparison signal. The switching circuit switches the robotic arm to a first motion mode or a second motion mode according to the comparison signal.