Abstract: A monitoring method and a monitoring system for a machine tool to machine a workpiece are provided. The monitoring method includes the following steps. First, a vibration signal of a spindle of the machine tool is detected. Next, a vibration feature value of the vibration signal is obtained. Whether the vibration feature value exceeds a threshold condition is determined, wherein the threshold condition is determined by a training model based on a predetermined surface quality of the workpiece. When the vibration feature value exceeds the threshold condition, a machining parameter of the machine tool is adjusted.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.

Abstract: A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.

Abstract: A display panel includes a plurality of driving electrode regions and a plurality of wiring regions connected between the driving electrode regions. A (2n?1)th wiring region extended from a (2n?1)th driving electrode region toward a (2n)th driving electrode region has a wiring extending direction forming a first included angle with an arrangement direction, and a (2n)th wiring region extended from the (2n)th driving electrode region toward a (2n+1)th driving electrode region has a wiring extending direction forming a second included angle with the arrangement direction, and a (2n+1)th wiring region extended from the (2n+1)th driving electrode region toward a (2n+2)th driving electrode region has a wiring extending direction forming a third included angle with the arrangement direction, wherein n is a positive integer. At least one of the first included angle, the second included angle and the third included angle is positive and at least one of them is negative.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.

Abstract: A time synchronization method for a plurality of time synchronization domains includes building a plurality of precision time protocol (PTP) instances corresponding to the plurality of time synchronization domains; determining a grandmaster clock; and synchronizing, by the plurality of PTP instances, timings of the plurality of time synchronization domains according to the grandmaster clock.

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Abstract: An auto-configuration method for a time-sensitive networking (TSN) system includes obtaining, by a first OPC UA client module, a TSN configuration of a stream; transmitting, by the first OPC UA client module, the TSN configuration to an OPC UA server module of a centralized user configuration (CUC) in the TSN system; obtaining, by the CUC, a routing information and scheduling of the stream according to the TSN configuration and a network topology; sending, by the first OPC UA client module, a request to the OPC UA server to obtain the routing information and scheduling of the stream; and configuring the routing information and scheduling of the stream to a plurality of end stations in the TSN system after the plurality of end stations are online.

Abstract: The invention relates to processes for preparing benzoprostacyclin analogues and intermediates prepared from the process, and the benzoprostacyclin analogues prepared therefrom. The invention also relates to cyclopentenone intermediates in racemic or optically active form.

Abstract: An integrated circuit includes a T-coil circuit, a silicon-controlled rectifier (SCR), and a signal-loss prevention circuit. The T-coil circuit is coupled to an input/output (I/O) pad and an internal circuit. The SCR is coupled to the T-coil circuit and the internal circuit. The signal-loss prevention circuit is coupled to the T-coil circuit and the SCR. The signal-loss prevention circuit includes a resistor coupled to the T-coil circuit and the SCR. An electrostatic current flows through the resistor and turns on the SCR. The signal-loss prevention circuit may also include a diode circuit coupled to the T-coil circuit and the SCR. The diode circuit is configured to prevent signal loss.

Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.

Abstract: The present application relates to a system and a method for producing vinyl chloride. The system comprise a preheat unit, a gas-liquid separating unit, a heat-recovery unit, a heating unit and a thermal pyrolysis unit, and therefore heat energy of the thermal pyrolysis product can be efficiently recovered. Energy cost of the system can be efficiently lowered with the heat-recovery unit and the heating unit, and further prolonging operating cycle of the system.

Abstract: A transparent display panel with driving electrode regions, circuit wiring regions, and optically transparent regions is provided. The driving electrode regions are arranged into an array in a first direction and a second direction. An average light transmittance of the circuit wiring regions is less than ten percent, and an average light transmittance of the optically transparent regions is greater than that of the driving electrode regions and the circuit wiring regions. The first direction intersects the second direction. The circuit wiring regions connect the driving electrode regions at intervals, such that each optically transparent region spans among part of the driving electrode regions. The transparent display panel includes first signal lines and second signal lines extending along the circuit wiring regions, and each circuit wiring region is provided with at least one of the first signal lines and at least one of the second signal lines.

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Abstract: An integrated circuit includes a T-coil circuit, a silicon-controlled rectifier (SCR), and a signal-loss prevention circuit. The T-coil circuit is coupled to an input/output (I/O) pad and an internal circuit. The SCR is coupled to the T-coil circuit and the internal circuit. The signal-loss prevention circuit is coupled to the T-coil circuit and the SCR. The signal-loss prevention circuit includes a resistor coupled to the T-coil circuit and the SCR. An electrostatic current flows through the resistor and turns on the SCR. The signal-loss prevention circuit may also include a diode circuit coupled to the T-coil circuit and the SCR. The diode circuit is configured to prevent signal loss.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: The invention relates to processes for preparing benzoprostacyclin analogues and intermediates prepared from the process, and the benzoprostacyclin analogues prepared therefrom. The invention also relates to cyclopentenone intermediates in racemic or optically active form.

Abstract: The invention relates to processes for preparing carbaprostacyclin analogues and intermediates prepared from the processes. The invention also relates to cyclopentenone intermediates in racemic or optically active form.

Abstract: The invention relates to processes for preparing carbaprostacyclin analogues and intermediates prepared from the processes. The invention also relates to cyclopentenone intermediates in racemic or optically active form.

Abstract: A racemic or optically enriched compound of Formula 1: wherein P is H or a protective group for hydroxyl groups; and X is Cl, Br, I, or —CH2CH2CH2COOR1, wherein R1 is C1-7-alkyl or C7-11-aralkyl.