Abstract: The present disclosure provides a defect inspecting method and a defect inspecting system configured to inspect a memory device. The defect inspecting method includes the operations of: resetting the memory device from a power on state; initializing the memory device; performing a plurality of write operations to a memory cell array of the memory device according to a test pattern; performing a plurality of read operations to the memory cell array of the memory cell to generate a readout pattern; and determining whether a defect existed in the memory device according to the readout pattern.

Abstract: A display apparatus includes a first conductive pattern layer, a first insulating pattern layer, a second conductive pattern layer, a second insulating pattern layer, pixel structures, and a light-absorbing pattern layer. The first insulating pattern layer is disposed on the first conductive pattern layer and has a first opening. The second conductive pattern layer is disposed on the first insulating pattern layer and has light-shielding conductive patterns arranged periodically. The second insulating pattern layer is disposed on the second conductive pattern layer and has a second opening overlapped with the first opening. The light-absorbing pattern layer covers at least a first sidewall defining the first opening and a second sidewall defining the second opening and separates the light-shielding conductive patterns of the second conductive pattern layer. The light-absorbing pattern layer has a light-transmitting opening overlapped with the first opening and the second opening.

Abstract: A total internal reflection display includes a sub-pixel, a reflecting layer, at least one first stereoscopic electrode and a display medium layer. The sub-pixel is defined by a color filter and a black matrix disposed adjacently to the color filter. The reflecting layer is located beneath the sub-pixel. The first stereoscopic electrode is located beneath the black matrix. The width of the first stereoscopic electrode is less than the width of the black matrix. The display medium layer is located between the sub-pixel and the reflecting layer. The height of the first stereoscopic electrode is greater than half of the thickness of the display medium layer.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.

Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

Abstract: The invention relates to processes for preparing benzoprostacyclin analogues and intermediates prepared from the process, and the benzoprostacyclin analogues prepared therefrom. The invention also relates to cyclopentenone intermediates in racemic or optically active form.

Abstract: A method for manufacturing a bending-tolerant multilayered flexible circuit board (FPC) suitable for use in a disposable biosensor chip includes manufacturing and bending a single-sided FPC. The single-sided FPC includes a base layer, a wiring layer, and through holes. The wiring layer includes first and second wiring areas. A first bending area is formed between each first wiring area and the corresponding second wiring area, the through holes forming an easy bending line. The second wiring area is bent relative to the first wiring area along the bending line to obtain the multilayered FPC.

Abstract: An embodiment of the present invention provides a micro light emitting diode (LED) array and its manufacturing method. The micro-LED includes a substrate, an epitaxial layer formed on the substrate, and a conversion film formed on the epitaxial layer. Pixels can be defined through lithography, and the pixel size can be very small. This method is characterized in that a mass transfer is not required.

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.

Abstract: An integrated circuit includes a T-coil circuit, a silicon-controlled rectifier (SCR), and a signal-loss prevention circuit. The T-coil circuit is coupled to an input/output (I/O) pad and an internal circuit. The SCR is coupled to the T-coil circuit and the internal circuit. The signal-loss prevention circuit is coupled to the T-coil circuit and the SCR. The signal-loss prevention circuit includes a resistor coupled to the T-coil circuit and the SCR. An electrostatic current flows through the resistor and turns on the SCR. The signal-loss prevention circuit may also include a diode circuit coupled to the T-coil circuit and the SCR. The diode circuit is configured to prevent signal loss.

Abstract: An embodiment of the present invention provides a micro light emitting diode (LED) array and its manufacturing method. The micro-LED includes a substrate, an epitaxial layer formed on the substrate, and a conversion film formed on the epitaxial layer. Pixels can be defined through lithography, and the pixel size can be very small. This method is characterized in that a mass transfer is not required.

Abstract: A semiconductor structure corresponds to a first diode and a second diode connected in series. A first well region is on a first deep well region. Two second well regions are at two sides of the first well region respectively. A first doping region and a second doping region are on the first well region. A first isolation region is between the first doping region and the second doping region. A third well region is on a second deep well region. Two fourth well regions are at two sides of the third well region respectively. A third doping region and a fourth doping region are on the third well region. A second isolation region is between the third doping region and the fourth doping region. The second doping region and third doping region are connected. The second deep well region is separated from the first deep well region.

Abstract: A connector device is provided, including a first housing, a circuit assembly, a second housing, and a connector. The circuit assembly is disposed on the first housing, and has a first connecting port and a second connecting port. The second housing is detachably engaged with the first housing. The connector is disposed on the second housing, and has an opening and a terminal. When the first housing is engaged with the second housing and the opening faces the first direction, the terminal is electrically connected to the first connecting port. When the first housing is engaged with the second housing and the opening faces the second direction, the terminal is electrically connected to the second connecting port. The first direction is different from the second direction.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A semiconductor structure corresponds to a first diode and a second diode connected in series. A first well region is on a first deep well region. Two second well regions are at two sides of the first well region respectively. A first doping region and a second doping region are on the first well region. A first isolation region is between the first doping region and the second doping region. A third well region is on a second deep well region. Two fourth well regions are at two sides of the third well region respectively. A third doping region and a fourth doping region are on the third well region. A second isolation region is between the third doping region and the fourth doping region. The second doping region and third doping region are connected. The second deep well region is separated from the first deep well region.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: The present disclosure provides various core constructs. According to embodiments of the present disclosure, the core construct can be used to configure pharmaceutical molecules. In particular, the core construct may be conjugated with a functional element via the click chemistry.

Abstract: The application relates to a capacitance sensing circuit, which samples and holds a reference signal to generate an input reference signal, hereby, an input signal is generated to a sensing circuit. Thereby, the sensing circuit generates an output signal according to the input signal and a sensing signal, for the capacitance sensing.

Abstract: A connector device is provided, including a first housing, a circuit assembly, a second housing, and a connector. The circuit assembly is disposed on the first housing, and has a first connecting port and a second connecting port. The second housing is detachably engaged with the first housing. The connector is disposed on the second housing, and has an opening and a terminal. When the first housing is engaged with the second housing and the opening faces the first direction, the terminal is electrically connected to the first connecting port. When the first housing is engaged with the second housing and the opening faces the second direction, the terminal is electrically connected to the second connecting port. The first direction is different from the second direction.

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.