Abstract: A display panel includes an active device disposed on a substrate, a first electrode electrically connected to the active device, a pixel definition layer, a light emitting layer, a second electrode, a shielding pattern layer, and first and second color filter pattern layers. The pixel definition layer has a first opening overlapped with the first electrode. At least a portion of the light emitting layer is disposed within the first opening and on the first electrode. The second electrode is disposed on the light emitting layer. The shielding pattern layer is disposed on the second electrode and has a second opening overlapped with the first opening. The first color filter pattern layer is disposed on the second electrode and overlapped with the first and second openings. The second color filter pattern layer is disposed on the second electrode. The first and second color filter pattern layers are stacked with each other right above the shielding pattern layer.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A method for parasitic-aware capacitor sizing and layout generation is proposed, which is executed by a computer, the method comprising using the computer to perform the following: creating a capacitor sizing and parasitic matching sequence to represent a unit capacitor size, routing topology and routing patterns of a plural of nets in a capacitor network. Next, a shielding assignment is performed to create a number of shielding portions of each net in the plural of nets. Then, a fitness evaluation of configurations of the capacitor sizing and parasitic matching sequence is performed. A shielding net routing is performed to compensate unmatched parasitic capacitance of the configurations of the capacitor sizing and parasitic matching sequence.

Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

Abstract: A method for treating cancer in a subject is provided; the method includes administrating bupropion to the subject, wherein the tumor cells of the cancer overexpress neuronal acetylcholine receptor subunit ?9 (CHRNA9). Another method for treating cancer in a subject is provided; the method includes administrating a pharmaceutical composition to the subject, wherein the pharmaceutical composition includes: a therapeutically effective amount of bupropion and a pharmaceutically acceptable excipient; wherein the tumor cells of the cancer overexpress CHRNA9. A method for inhibiting migration of tumor cells is also provided; the method includes administrating an effective amount of bupropion to the tumor cells; wherein the tumor cells overexpress CHRNA9.

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

Abstract: A printed circuit board with built-in vertical heat dissipation ceramic block, and an electrical assembly are disclosed. The electrical assembly includes the board and a plurality of electronic components. The printed circuit boards includes a dielectric material layer defining at least one through hole, at least one ceramic block corresponding to the through hole, at least one fixing portion for joining the ceramic block to the through hole of the dielectric material layer, a metal circuit layer provided on upper surfaces of the dielectric material layer and the ceramic block, and a high thermal conductivity layer provided on lower surfaces of the dielectric material layer and the ceramic block. The printed circuit board allows the location and size of the ceramic block to be modified according to requirements, so as to implement complicated circuit designs, achieve good effect of thermal conduction, control thermal conduction path, and reduce manufacturing cost.

Abstract: An electroluminescent (EL) device is disclosed. An optically reflective concave structure includes a first surface and a second surface that lies at an angle relative to the first surface, wherein at least the first and second surfaces are optically reflective. One or more functional layers include a light emitting layer, disposed over the surfaces of the optically reflective concave structure, wherein at least one electroluminescent area of the light emitting layer is defined on the first surface. Especially, the ratio between the diameter of the first surface and the thickness of the one or more functional layers in the optically reflective concave structure is smaller than a constant value.

Abstract: An electrostatic discharge (ESD) protection device and an operation method of the ESD protection device are provided. The ESD protection device includes an ESD current rail, an ESD protection element string, and a bias circuit. A first end and a second end of the ESD protection element string are electrically connected to the ESD current rail and a signal pad, respectively. The ESD protection element string includes a first ESD protection element and a second ESD protection element that are serially connected. The bias circuit is electrically connected to the ESD protection element string to provide a bias voltage to a common connection node between the first ESD protection element and the second ESD protection element.

Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A light-emitting thin film is provided with one or more light-emitting materials and a host. Each light-emitting material is capable of absorbing photons or electromagnetic waves and re-radiating photons or electromagnetic waves after the absorption. The host is used to eliminate grain boundaries and mitigate scattering of the light-emitting materials after the film is formed. Preferably the light-emitting thin film is made of a solution process. A head-up display using the light-emitting thin film is also disclosed.

Abstract: An ESD protection circuit and integrated circuit for a broadband circuit are disclosed. The ESD protection circuit includes a silicon-controlled rectifier, an inductor and a trigger unit. The silicon-controlled rectifier is formed by four semiconductor materials and includes a first end, a second end and a third end. The first end is coupled with a first P-type semiconductor material and a signal input end. The second end is coupled with a second N-type semiconductor material. The third end is coupled with a second P-type semiconductor material. One end of the inductor is coupled with the signal input end and the first end, and the other end thereof is coupled with a signal output end and a high-frequency circuit. One end of the trigger unit is coupled with the signal output end and the high-frequency circuit, and the other end thereof is coupled with the third end.

Abstract: A display panel includes an active device disposed on a substrate, a first electrode electrically connected to the active device, a pixel definition layer, a light emitting layer, a second electrode, a shielding pattern layer, and first and second color filter pattern layers. The pixel definition layer has a first opening overlapped with the first electrode. At least a portion of the light emitting layer is disposed within the first opening and on the first electrode. The second electrode is disposed on the light emitting layer. The shielding pattern layer is disposed on the second electrode and has a second opening overlapped with the first opening. The first color filter pattern layer is disposed on the second electrode and overlapped with the first and second openings. The second color filter pattern layer is disposed on the second electrode. The first and second color filter pattern layers are stacked with each other right above the shielding pattern layer.

Abstract: The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

Abstract: The present disclosure provides various molecular constructs having a targeting element and an effector element. Methods for treating various diseases using such molecular constructs are also disclosed.

Abstract: An electrostatic discharge (ESD) protection circuit for providing ESD paths between a signal pad and a first or second power rail includes a first ESD protection module and a second ESD protection module. The first ESD protection module is coupled between the signal pad and the first power rail, and includes at least two first diodes and a first resistor. The first diodes are stacked with each other, and one of the first diodes is electrically connected with the first resistor in parallel. The second ESD protection module is coupled between the signal pad and the second power rail, and includes at least two second diodes and a second resistor. The second diodes are stacked with each other, and one of the second diodes is electrically connected with the second resistor in parallel. The signal pad is coupled between the stacked first diodes and the stacked second diodes.

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.