Patents by Inventor Chun-Yuan Wu

Chun-Yuan Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10439023
    Abstract: Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: October 8, 2019
    Assignee: United Microelectronics Corp.
    Inventors: Huai-Tzu Chiang, Sheng-Hao Lin, Hao-Ming Lee, Yu-Ru Yang, Shih-Hsien Huang, Chien-Hung Chen, Chun-Yuan Wu, Cheng-Tzung Tsai
  • Patent number: 10424736
    Abstract: An aging test system and method are disclosed. An aging test system includes a vacuum chamber provided with an aging device for aging a display panel; a lighting mechanism electrically connected to the display panel for lighting up the display panel; at least one spectrometer for detecting a color coordinate and a brightness of the display panel; at least one camera for detecting a dark spot defect of sub-pixels of the display panel. Accordingly, the present invention can save the inspection time, increase the inspection efficiency and save the inspection device in order to reduce the inspection cost.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: September 24, 2019
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventors: Aiguo Tu, Chun-Hsiung Fang, Tsung-yuan Wu, Jinchuan Li, Liang Jiang, Feng Wei
  • Publication number: 20190285933
    Abstract: A display device includes a first substrate, a first polarizer, and a cover. The first polarizer is located on the first substrate, such that light passing through the first substrate irradiates out from the first polarizer. At least a portion of the cover is located on the first substrate, and the cover extends away from the first polarizer and protrudes from the first substrate. A side of the cover and a side of the first polarizer facing away from the first substrate are coplanar or not coplanar.
    Type: Application
    Filed: June 4, 2019
    Publication date: September 19, 2019
    Inventors: Chih-Wei CHIEN, Chih-Kang WU, Chun-Yuan CHEN, Shau-Yu TSAI, Chih-Ling HSUEH
  • Patent number: 10408246
    Abstract: A receiving device for an electronic device, to hold a stylus, includes a top member, a bottom member, and a connection member. The bottom member faces the top member, the connection member is arranged between the top member and the bottom member. A clamping member and a receiving member are formed between the top member, the bottom member, and the connection member. The clamping member faces away from the receiving member, the clamping member is clamped onto an electronic device, the receiving member receives a stylus.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: September 10, 2019
    Assignees: Fu Tai Industry (Shenzhen) Co., Ltd., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Lei Hu, Chia-Jui Hu, Hao-Yuan Huang, Yen-Yu Chen, Chun-Kai Peng, Jian-Guo Wu, Xin Yang
  • Patent number: 10401980
    Abstract: A mouse device with a button feedback mechanism is provided. The mouse device includes a mouse body and a button module. The mouse body includes an upper case, a lower case and a hollow cylinder. The button module includes a button, an elastic element, an attracting element and a suspension arm. The elastic element is disposed within the hollow cylinder and located under the pressing part. The button is contacted with the elastic element. The attracting element is installed on the upper case. The suspension arm includes a connection segment and a free segment. The connection segment is penetrated through the hollow cylinder and connected with the elastic element. The free segment is located under the attracting element. Consequently, the mouse device provides the sound feedback and the touch feedback.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: September 3, 2019
    Assignee: PRIMAX ELECTRONICS LTD.
    Inventors: Yung-Ming Tsai, Chun-Che Wu, Yi-Te Chou, Chung-Yuan Chen
  • Patent number: 10381228
    Abstract: An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: August 13, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ying Lin, Ted Ming-Lang Guo, Chin-Cheng Chien, Chih-Chien Liu, Hsin-Kuo Hsu, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: 10381380
    Abstract: The present invention provides a method of forming a semiconductor device. First, a substrate having a first insulating layer formed thereon is provided. After forming an oxide semiconductor layer on the first insulating layer, two source/drain regions are formed on the oxide semiconductor layer. A bottom oxide layer is formed to entirely cover the source/drain regions, following by forming a high-k dielectric layer on the bottom oxide layer. Next, a thermal process is performed on the high-k dielectric layer, and a plasma treatment is performed on the high-k dielectric layer in the presence of a gas containing an oxygen element.
    Type: Grant
    Filed: April 8, 2018
    Date of Patent: August 13, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Fu Hsu, Chun-Yuan Wu
  • Patent number: 10366916
    Abstract: A semiconductor structure includes a substrate having a first region and a second region being adjacent each other; a first patterned layer formed on the substrate, wherein the first patterned layer includes first features in the first region, wherein the second region is free of the patterned layer; and a first guard ring disposed in the second region and surrounding the first features, wherein the first guard ring includes a first width W1 and is spaced a first distance D1 from the first features, W1 being greater than D1.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: July 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chihy-Yuan Cheng, Chun-Chang Wu, Shun-Shing Yang, Ching-Sen Kuo, Feng-Jia Shiu, Chun-Chang Chen
  • Publication number: 20190229053
    Abstract: A manufacturing method of a metal-insulator-metal (MIM) capacitor structure includes the following steps. A bottom plate is formed. A first conductive layer is patterned to be the bottom plate, and the first conductive layer includes a metal element. An interface layer is formed on the first conductive layer by performing a nitrous oxide (N2O) treatment on a top surface of the first conductive layer. The interface layer includes oxygen and the metal element of the first conductive layer. A dielectric layer is formed on the interface layer. A top plate is formed on the dielectric layer. The metal-insulator-metal capacitor structure includes the bottom plate, the interface layer disposed on the bottom plate, the dielectric layer disposed on the interface layer, and the top plate disposed on the dielectric layer.
    Type: Application
    Filed: January 22, 2018
    Publication date: July 25, 2019
    Inventors: Ya-Jyuan Hung, Ai-Sen Liu, Bin-Siang Tsai, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: 10347716
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a plurality of fin-shaped structures and a first shallow trench isolation (STI) around the fin-shaped structures on the first region and the second region; forming a patterned hard mask on the second region; removing the fin-shaped structures and the first STI from the first region; forming a second STI on the first region; removing the patterned hard mask; and forming a gate structure on the second STI.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: July 9, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: En-Chiuan Liou, Chih-Wei Yang, Yu-Cheng Tung, Chun-Yuan Wu
  • Publication number: 20190181174
    Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.
    Type: Application
    Filed: February 15, 2019
    Publication date: June 13, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh FANG, Ming-Chi WU, Ji-Heng JIANG, Chi-Yuan WEN, Chien-Nan TU, Yu-Lung YEH, Shih-Shiung CHEN, Kun-Yu LIN
  • Patent number: 10321233
    Abstract: A method and a portable electronic apparatus for adaptively adjusting a playback effect of speakers are provided. The portable electronic apparatus includes a speaker enclosure volume adjusting device and a processor coupled to the speakers and the speaker enclosure volume adjusting device. In the method, the processor detects a usage demand for the portable electronic apparatus and accordingly determines an audio mode. Based on the determined audio mode, the processor selects and activates multiple speakers, and adjusts an enclosure volume of at least one of the activated speakers, so as to change an audio frequency range of the at least one speaker and an overall audio frequency range covered by the activated speakers. Finally, the processor plays an audio through the activated speakers.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: June 11, 2019
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Po-Yueh Lan, Chang-Yuan Wu, Yi-Chang Wu, Kun-Tien Kuo, Ya-Hui Tseng, Chen-Yi Huang, Chun-Yi Ho, Hsiao-Ching Hung
  • Patent number: 10316953
    Abstract: An assembly of a lubrication system for fluid machinery includes a transmission shaft, an oil-injection insulating ring and a labyrinth ring. The transmission shaft defines axially power and passive sides. The power side includes a body unit having first and second bearings. The oil-injection insulating ring located between the first and second bearings sleeves the transmission shaft and connects a fuel-supply looping having outer and inner rings. The outer ring has at least one first hole communicatively connected with the fuel-supply looping. The labyrinth ring having first and second axial ends has outer diameters tapering from the second axial end to the first axial end. The first and second axial ends face the power and passive sides, respectively. A circumference of the labyrinth ring includes circular grooves to form a circumferential step-like structure. The labyrinth ring sleeves the transmission shaft and is embedded into the body unit.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: June 11, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ying-Che Weng, Teng-Yuan Wu, Jer-Lin Huang, Jyh-Nan Ho, Chun-Hsiang Yang
  • Publication number: 20190165167
    Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.
    Type: Application
    Filed: October 29, 2018
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Chou LIN, Yi-Cheng CHIU, Karthick MURUKESAN, Yi-Min CHEN, Shiuan-Jeng LIN, Wen-Chih CHIANG, Chen-Chien CHANG, Chih-Yuan CHAN, Kuo-Ming WU, Chun-Lin TSAI
  • Publication number: 20190157319
    Abstract: An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.
    Type: Application
    Filed: January 11, 2018
    Publication date: May 23, 2019
    Inventors: Yen-Ting CHIANG, Chun-Yuan CHEN, Hsiao-Hui TSENG, Yu-Jen WANG, Shyh-Fann TING, Wei-Chuang WU, Jen-Cheng LIU, Dun-Nian YAUNG
  • Publication number: 20190146600
    Abstract: A mouse device with a button feedback mechanism is provided. The mouse device includes a mouse body and a button module. The mouse body includes an upper case, a lower case and a hollow cylinder. The button module includes a button, an elastic element, an attracting element and a suspension arm. The elastic element is disposed within the hollow cylinder and located under the pressing part. The button is contacted with the elastic element. The attracting element is installed on the upper case. The suspension arm includes a connection segment and a free segment. The connection segment is penetrated through the hollow cylinder and connected with the elastic element. The free segment is located under the attracting element. Consequently, the mouse device provides the sound feedback and the touch feedback.
    Type: Application
    Filed: February 27, 2018
    Publication date: May 16, 2019
    Inventors: Yung-Ming Tsai, Chun-Che Wu, Yi-Te Chou, Chung-Yuan Chen
  • Patent number: 10290324
    Abstract: A recording device includes a camera component, a temperature sensor, and a processing component. The camera component is configured to capture a video to generate video data. The temperature sensor is configured to detect an operating temperature of the recording device. The processing component is configured to process the video data, and to enable the camera component to dynamically adjust at least one of a data rate of the video data and a frame rate of the video data according to the operating temperature during the camera component captures the video.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: May 14, 2019
    Assignee: HTC Corporation
    Inventors: Jen-Cheng Lai, Jia-Yuan Hsu, Tzu-Chia Tan, Chih-Yao Kuo, Chun-Hao Lin, Szu-Han Wu
  • Publication number: 20190139997
    Abstract: A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.
    Type: Application
    Filed: March 27, 2018
    Publication date: May 9, 2019
    Inventors: YEN-TING CHIANG, CHUN-YUAN CHEN, HSIAO-HUI TSENG, SHENG-CHAN LI, YU-JEN WANG, WEI CHUANG WU, SHYH-FANN TING, JEN-CHENG LIU, DUN-NIAN YAUNG
  • Publication number: 20190139837
    Abstract: Some embodiments relate to an integrated circuit including a semiconductor substrate including a multi-voltage device region. A first pair of source/drain regions are spaced apart from one another by a first channel region. A dielectric layer is disposed over the first channel region. A barrier layer is disposed over the dielectric layer. A fully silicided gate is disposed over the first channel region and is vertically separated from the semiconductor substrate by a work function tuning layer. The work function tuning layer separates the fully silicided gate from the barrier layer.
    Type: Application
    Filed: December 27, 2018
    Publication date: May 9, 2019
    Inventors: Chun-Han Tsao, Chii-Ming Wu, Cheng-Yuan Tsai, Yi-Huan Chen
  • Publication number: 20190115352
    Abstract: A semiconductor device includes a memory region, a plurality of bit lines in the memory region, a first low-k dielectric layer on each sidewall of each bit line, a plurality of storage node regions between the bit lines, and a second low-k dielectric layer surrounding each storage node region.
    Type: Application
    Filed: December 11, 2018
    Publication date: April 18, 2019
    Inventors: Chien-Ting Ho, Shih-Fang Tzou, Chun-Yuan Wu, Li-Wei Feng, Yu-Chieh Lin, Ying-Chiao Wang, Tsung-Ying Tsai