Abstract: Embodiments of the present disclosure provide a method for forming backside metal contacts with reduced Cgd and increased speed. Particularly, source/drain features on the drain side, or source/drain features without backside metal contact, are recessed from the backside to the level of the inner spacer to reduce Cgd. Some embodiments of the present disclosure use a sacrificial liner to protect backside alignment feature during backside processing, thus, preventing shape erosion of metal conducts and improving device performance.

Abstract: A random code generating method for the magnetoresistive random access memory is provided. Firstly, a first magnetoresistive random access memory cell and a second magnetoresistive random access memory cell are programmed into an anti-parallel state. Then, an initial value of a control current is set. Then, an enroll action is performed on the first and second magnetoresistive random access memory cells. If the first and second magnetoresistive random access memory cells fail to pass the verification action, the control current is increased by a current increment, and the step of setting the control current is performed again. If the first and second magnetoresistive random access memory cells pass the verification action, a one-bit random code is stored in the first magnetoresistive random access memory cell or the second magnetoresistive random access memory cell.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor structure also includes a gate structure including a first portion wrapping around the first nanostructures and a second portion wrapping around the second nanostructures. The semiconductor structure also includes a dielectric feature sandwiched between the first portion and the second portion of the gate structure. In addition, the dielectric feature includes a bottom portion and a top portion over the bottom portion, and the top portion of the dielectric feature includes a shell layer and a core portion surrounded by the shell layer.

Abstract: A network equipment, user equipment, and method related to reporting management are provided. In the method, a pause indication with report selection information is received. The report selection information is related to avoidance of report pause for at least one quality of experience (QoE) measurement configuration. The QoE report is sent based on the report selection information, wherein the at least one QoE report is associated with the at least one QoE measurement configuration.

Abstract: A user equipment and a method related to reporting management are provided. In the method, event-triggered information is received for a quality of experience (QoE) measurement configuration. A pause indication is received. To send or pause one or more QoE reports is determined based on the event-triggered information. The QoE report is associated with the QoE measurement configuration.

Abstract: The present disclosure relates to an integrated chip including a dielectric structure over a substrate. A first capacitor is disposed between sidewalls of the dielectric structure. The first capacitor includes a first electrode between the sidewalls of the dielectric structure and a second electrode between the sidewalls and over the first electrode. A second capacitor is disposed between the sidewalls. The second capacitor includes the second electrode and a third electrode between the sidewalls and over the second electrode. A third capacitor is disposed between the sidewalls. The third capacitor includes the third electrode and a fourth electrode between the sidewalls and over the third electrode. The first capacitor, the second capacitor, and the third capacitor are coupled in parallel by a first contact on a first side of the first capacitor and a second contact on a second side of the first capacitor.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first gate stack wrapping around first nanostructures, a second gate stack wrapping around second nanostructures, a gate isolation structure interposing between the first gate stack and the second gate stack, a first source/drain feature adjoining the first nanostructures, a second source/drain feature adjoining the second nanostructures, and a source/drain spacer structure interposing between the first source/drain feature and the second source/drain feature. The gate isolation structure covers a sidewall of the source/drain spacer structure.

Abstract: A method performed by an electronic device includes retrieving, from a first computing environment, a first set of structured documents that contains metadata for a first version of a workflow to be performed by a workflow engine, the first version of the workflow including a first set of workflow elements. The method further including retrieving, from a second computing environment, a second set of structured documents. The method determines whether a rule is to be applied, based on one but not both of the first and second sets of structured documents including at least one section for a workflow element having a type to which the rule applies, and generating a description of a change in the second version of the workflow relative to the first version of the workflow.

Abstract: A projecting apparatus includes a projecting device, an image-capturing device and a processing device. The projecting device projects a reversible structured light code onto a surface. The image-capturing device captures the reversible structured light code projected onto the surface and obtains image data. The processing device is coupled to the projecting device and the image-capturing device. The processing device receives the image data, generates three-dimensional point cloud information by performing decoding on the image data, and obtains scanning shift information corresponding to the projecting device according to the three-dimensional point cloud information and three-dimensional information corresponding to the surface.

Abstract: A three-dimensional (3D) memory device includes a 3D NAND memory array, an on-die static random-access memory (SRAM), and peripheral circuits formed on the same chip with the on-die SRAM. The peripheral circuits include a page buffer coupled to the on-die SRAM and a controller coupled to the on-die SRAM and the page buffer. The controller may be configured to load program data into the page buffer and cache the program data into the on-die SRAM as a backup copy of the program data. In response to a status of programming the program data from the page buffer into the 3D NAND memory array being failed, the controller may be further configured to transmit the backup copy of the program data in the on-die SRAM to the page buffer, and program the backup copy of the program data in the page buffer into the 3D NAND memory array.

Abstract: A power supply circuit is configured to supply power to a display panel. The power supply circuit includes a receiver circuit and a transmitter circuit. The receiver circuit is configured to couple the display panel and output a hot plugging signal. The transmitter circuit is configured to receive the hot plugging signal and couple a power circuit. The transmitter circuit is further configured to communicate the receiver circuit to generate an enable signal. The hot plugging signal and the enable signal are configured to control whether a first voltage signal from the power circuit is transmitted to the receiver circuit and the display panel via the transmitter circuit.

Abstract: A shielding housing structure of an electric connector includes an insulating body including a first terminal slot for insertion of a first terminal set, a second terminal slot for insertion of a second terminal set, a socket for insertion of a preset board; a shielding housing having an accommodation space assembled with a top side of the insulating body, and top holes and lateral holes formed thereon, and an insertion hole formed on upper edges of lateral hole; and a movable cover having a top covering plate having top openings, and a side covering plate having lateral openings. The top covering plate is plugged into the insertion hole, and can be slid to a first position to form thermal convection ventilation holes on the shielding housing structure, or the top covering plate can be slid to a second position to form an enclosing status of the shielding housing.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, a gate cut feature extending continuously from between the first gate structure and the second gate structure to between the first backside dielectric feature and the second backside dielectric feature, and a liner disposed between the gate cut feature and the first backside dielectric feature and between the gate cut feature and the second backside dielectric feature.

Abstract: The present disclosure provides a method of forming a semiconductor device structure. The method includes forming a trench in a dielectric layer on a semiconductor substrate; forming a bottom metal feature of a first metal in a lower portion of the trench by a selective deposition; depositing a barrier layer in an upper portion of the trench, the barrier layer directly contacting both a top surface of the bottom metal feature and sidewalls of the dielectric layer; and forming a top metal feature of a second metal on the barrier layer, filling in the upper portion of the trench, wherein the second metal is different from the first metal in composition.

Abstract: An IC structure includes a source epitaxial structure, a drain epitaxial structure, a first silicide region, a second silicide region, a source contact, a backside via rail, a drain contact, and a front-side interconnection structure. The first silicide region is on a front-side surface, a first sidewall of the source epitaxial structure, and a second sidewall of the source epitaxial structure. The second silicide region is on a front-side surface of the drain epitaxial structure. The source contact is in contact with the first silicide region and has a protrusion extending past a backside surface of the source epitaxial structure. The backside via rail is in contact with the protrusion of the source contact. The drain contact is in contact with the second silicide region. The front-side interconnection structure is on a front-side surface of the source contact and a front-side surface of the drain contact.

Abstract: A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: Methods, computer readable media, and devices for supporting fine/coarse-grained deployment of source code to environments via version control systems are disclosed. One method may include integrating, via a graphical user interface (GUI), source code into a version control system, mapping, via the GUI, an environment topology to the version control system, verifying a source code change based on a set of configurable checks, deploying, via the GUI, the source code change into one environment of the environment topology, and tracking, via the GUI, a status of the source code change.

Abstract: A semiconductor structure has a frontside and a backside. The semiconductor structure includes an isolation structure at the backside; one or more transistors at the frontside, wherein the one or more transistors have source/drain electrodes; two metal plugs through the isolation structure and contacting two of the source/drain electrodes from the backside, wherein the two metal plugs and the isolation structure form sidewalls of a trench; and a dielectric liner on the sidewalls of the trench, wherein the dielectric liner partially or fully surrounds an air gap within the trench.

Abstract: During a front side process of a wafer, a hard mask layer is formed under a metal portion of a semiconductor device, and an epitaxial layer is deposited to form epitaxial portions of the semiconductor device. In a back side process of the wafer to cut the epitaxial layer, the metal portion is covered and protected by the hard mask layer from damages during etching of the epitaxial layer.