Abstract: A method is provided. The method includes: receiving a semiconductor structure having a first material and a second material; performing a first etch on the first material for a first duration under a first etching chemistry; and performing a second etch on the second material for a second duration under a second etching chemistry, wherein the first material includes a first incubation time and the second material includes a second incubation time greater than the first incubation time under the first etching chemistry. The first material includes a third incubation time and the second material includes a fourth incubation time less than the third incubation time under the second etching chemistry.

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Abstract: Small interfering RNAs (siRNA) having specific modification patterns to improve interference efficiencies thereof. The modification patterns each comprises a combination of 2?-O methyl modification, 2?-O-fluoro-modification, and phosphorothioate (PS) bonds at defined positions in the sense strand and anti-sense strand of each siRNA, and optionally 5? phosphate modifications.

Abstract: Packaged semiconductor devices including high-thermal conductivity molding compounds and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution structure; a first die over and electrically coupled to the first redistribution structure; a first through via over and electrically coupled to the first redistribution structure; an insulation layer extending along the first redistribution structure, the first die, and the first through via; and an encapsulant over the insulation layer, the encapsulant surrounding portions of the first through via and the first die, the encapsulant including conductive fillers at a concentration ranging from 70% to about 95% by volume.

Abstract: Some embodiments disclosed herein are directed to battery cells with battery stacks having different tab lengths. Some embodiments may include a first battery stack that includes a first plurality of tabs extending from the first battery stack, and a second battery stack adjacent to the first battery stack that includes a second plurality of tabs extending from the second battery stack, where the second plurality of tabs are shorter than the first plurality of tabs. A weld plate may be welded to the first plurality of tabs and the second plurality of tabs without trimming the first plurality of tabs. Other embodiments may be disclosed or claimed.

Abstract: Semiconductor package includes substrate, first barrier layer, second barrier layer, routing via, first routing pattern, second routing pattern, semiconductor die. Substrate has through hole with tapered profile, wider at frontside surface than at backside surface of substrate. First barrier layer extends on backside surface. Second barrier layer extends along sidewalls of through hole and on frontside surface. Routing via fills through hole and is separated from sidewalls of through hole by at least second barrier layer. First routing pattern extends over first barrier layer on backside surface and over routing via. First routing pattern is electrically connected to end of routing via and has protrusion protruding towards end of routing via in correspondence of through hole. Second routing pattern extends over second barrier layer on frontside surface. Second routing pattern directly contacts another end of routing via. Semiconductor die is electrically connected to routing via by first routing pattern.

Abstract: A disposable test cartridge to determine the concentration of one or more liver enzymes in a blood sample includes a cartridge body having a plurality of chambers where at least one of the chambers contains a reactant mixture that reacts when catalyzed by one of the liver enzymes ALT, AST, ALP, or GGT in a blood sample forming a reaction solution, a removable cartridge cover connected to the cartridge body, and a test strip module connected to the cartridge body. The test strip module containing at least one analyte test strip configured for receiving a portion of the reaction solution and electrochemically measuring at least one analyte that is a reaction product in the reaction solution.

Abstract: A webcam module, including a front casing, a rear casing, a support base, a lens, a blocking cover, and a lever, is provided. The front casing has a lens hole. The rear casing is disposed at the front casing and forms an accommodating space. The support base is rotatably disposed in the accommodating space. The lens is disposed on a front side surface of the support base facing the front casing. The blocking cover is slidably sleeved around the support base and faces the front casing. The lever is connected to the blocking cover and protrudes above the front casing and the rear casing. The lever is adapted to drive the blocking cover to slide along the support base. The lever is adapted to drive the blocking cover and the support base to rotate relative to the front casing with an axis as the center.

Abstract: A semiconductor device may be manufactured using a multiple-layer photoresist that is formed of one or more materials that reduce the likelihood and/or amount of residual material retained in the multiple-layer photoresist. A photoresist underlayer of the multiple-layer photoresist includes a polymer having a highly uniform distribution of polar group monomers. Additionally and/or alternatively, the photoresist underlayer includes a polymer that includes a main chain and a plurality of side chains coupled with the main chain. The side chains include an acid generator component. Since the acid generator component is coupled with the main chain of the polymer by the side chains as opposed to uncontrollably diffusing into the photoresist layer, the acid generated by the acid generator component upon exposure to radiation collects under the bottom of the photoresist layer in a uniform manner and enables the bottommost portions of the photoresist layer to be developed and removed.

Abstract: A ballistocardiogram detection device for noise reduction includes a bearing module, a force sensor, a vibration sensor, and a signal processing module. The bearing module is disposed directly or indirectly on a body or back of a test subject. The force sensor and the vibration sensor are disposed on the bearing module. A distance between the vibration sensor and the force sensor is less than 20 cm. The signal processing module is electrically connected to the force sensor and the vibration sensor. The signal processing module is configured to receive signals output from the force sensor and the vibration sensor.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an interconnect structure disposed over a substrate. The interconnect structure includes a plurality of interconnect layers disposed within a dielectric structure. A bond pad structure is disposed over the interconnect structure. The bond pad structure includes a contact layer. A first masking layer including a metal-oxide is disposed over the bond pad structure. The first masking layer has interior sidewalls arranged directly over the bond pad structure to define an opening. A conductive bump is arranged within the opening and on the contact layer.

Abstract: A first page read on the first memory page utilizing a first trim value is performed responsive to initiating a memory page scan on a first memory page of a plurality of memory pages. Whether a first data state metric associated with the first page read satisfies a first threshold criterion is determined. A second page read on the first memory page utilizing a second trim value is performed responsive to determining that the first data state metric satisfies the first threshold criterion. Whether a second data state metric associated with the second page read satisfies a second threshold criterion is determined. The second trim value to perform subsequent page reads during memory page scans is selected responsive to determining that the second data state metric does not satisfy the first threshold criterion.

Abstract: The disclosure presents processes to determine the direction and magnitude of tubing eccentricity along the length of a tube inserted within a borehole. The tubing can be a wireline, a drill string, a drill pipe, or tubing capable of allowing fluid or other material to flow through it. As borehole operations proceed, the tubing can move toward the side of the borehole. This eccentricity can cause excess wear and tear on the tubing, on the casing of the borehole, or on the inner surface of the subterranean formation. The eccentricity can be measured using acoustic signals that are collected downhole covering the azimuthal angles 0° to 360° at a location in the borehole. The collected signals can be filtered, transformed, and analyzed to estimate the tubing eccentricity. Other processes and systems can use the results to obtain cement bond evaluations through tubing and to determine preventative or restorative actions.

Abstract: A display may include an array of pixels such as light-emitting diode pixels. The pixels may include multiple circuitry decks that each include one or more circuit components such as transistors, capacitors, and/or resistors. The circuitry decks may be vertically stacked. Each circuitry deck may include a planarization layer formed from a siloxane material that conforms to underlying components and provides a planar upper surface. In this way, circuitry components may be vertically stacked to mitigate the size of each pixel footprint. The circuitry components may include capacitors that include both a high-k dielectric layer and a low-k dielectric layer. The display pixel may include a via with a width of less than 1 micron.

Abstract: A phased array transmitter includes a plurality of signal couplers arranged to receive a radio frequency (RF) input signal, and a plurality of RF transmitters coupled to the signal couplers. Each RF transmitter includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive a plurality of electrical signals to produce an RF output signal. An amplifier circuit of the chip is configured to amplify the RF input signal to generate a plurality of amplified signals at a plurality of output terminals, respectively. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the radiating element. The phase shifting circuit is arranged to phase shift the amplified signals, and accordingly generate the electrical signals fed to the radiating element. Respective phase shifting circuits and respective radiating elements of the RF transmitters are formed on a same substrate.

Abstract: A chemical mechanical polishing chamber may include a platen disposed within the chemical mechanical polishing chamber, the platen configured to support a polishing pad. The chamber may also include a slurry delivery arm configured to deliver a slurry to the polishing pad during a chemical mechanical polishing process. The chamber may include an arm may include one or more brackets, mechanically attached to an internal side of the chemical mechanical polishing chamber and positioned over the platen. The chamber may include a plurality of nozzles configured to deliver a gas to the polishing pad, the plurality of nozzles mechanically attached to the one or more brackets of the arm, each of the plurality of nozzles oriented such that an air gap is disposed between adjacent nozzles of the plurality of nozzles such that air may be pulled from the air gap and propelled with the gas towards the polishing pad.

Abstract: A semiconductor device includes a first fin and a second fin in a first direction and aligned in the first direction over a substrate, an isolation insulating layer disposed around lower portions of the first and second fins, a first gate electrode extending in a second direction crossing the first direction and a spacer dummy gate layer, and a source/drain epitaxial layer in a source/drain space in the first fin. The source/drain epitaxial layer is adjacent to the first gate electrode and the spacer dummy gate layer with gate sidewall spacers disposed therebetween, and the spacer dummy gate layer includes one selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbon nitride, and silicon carbon oxynitride.

Abstract: A display panel includes a substrate, multiple scan lines, multiple data lines, and multiple pixel structures. The scan lines and the data lines are disposed on the substrate. The pixel structure is disposed on the substrate and electrically connected to the scan lines and the data lines, and includes an active device, a pixel electrode, a capacitor electrode, an overcoat layer, a first common electrode, a second common electrode, a first passivation layer, and a second passivation layer. The active device is electrically connected one scan line, one data line, and the pixel electrode. The capacitor electrode extends from a drain and is electrically connected to the pixel electrode. The overcoat layer is disposed between the pixel electrode and the capacitor electrode. The first common electrode overlaps the capacitor electrode, and is located between the overcoat layer and the capacitor electrode.

Abstract: A speaker module includes a casing, a speaker unit and a vibration absorber. The speaker unit has a sound cavity. The speaker unit is disposed on the casing, and the speaker unit includes a first diaphragm. The vibration absorber is disposed in the casing, and the vibration absorber has a second diaphragm. When the first diaphragm vibrates, the airflow generated by the first diaphragm drives the second diaphragm to vibrate, and the vibration direction of the second diaphragm is opposite to the vibration direction of the first diaphragm, so as to absorb the vibration generated by the first diaphragm to the casing.

Abstract: A method for forming an indium gallium nitride quantum well structure is disclosed. The method includes forming a gallium nitride microdisk on a substrate, with the gallium nitride microdisk having an inverted pyramid form and an end face; and forming multiple quantum well layers on the end face, with each quantum well layer including an indium gallium nitride quantum well and a barrier layer. The indium gallium nitride quantum well is grown at a growth temperature adjusted using a trend equation within a temperature range of 480° C. to 810° C.