Patents by Inventor Chung Song
Chung Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12216326Abstract: An optical member driving mechanism for connecting an optical member is provided, including a fixed portion and a first adhesive member. The fixed portion includes a first member and a second member, wherein the first member is fixedly connected to the second member via the first adhesive member.Type: GrantFiled: March 26, 2021Date of Patent: February 4, 2025Assignee: TDK TAIWAN CORP.Inventors: Hsiang-Chin Lin, Shou-Jen Liu, Guan-Bo Wang, Kai-Po Fan, Chan-Jung Hsu, Shao-Chung Chang, Shih-Wei Hung, Ming-Chun Hsieh, Wei-Pin Chin, Sheng-Zong Chen, Yu-Huai Liao, Sin-Hong Lin, Wei-Jhe Shen, Tzu-Yu Chang, Kun-Shih Lin, Che-Hsiang Chiu, Sin-Jhong Song
-
Patent number: 12126265Abstract: A switch mode power supply circuit with high voltage output, an electrostatic spray apparatus and agricultural plant protection apparatus using the same are provided. The switch mode power supply circuit is electrically connected in series with at least a pre-stage power converter and a post-stage power converter. In order to simplify the control, the switch of the pre-stage power converter is omitted, only one switch of the post-stage power converter is adopted to perform synchronous control. Since the multiple sets of power conversion circuits in the previous stage are connected in series, the turn ratio of the transformer in the power converter in the subsequent stage can be reduced. Therefore, the transformer can be miniaturized and the power supply circuit would be more suitable for agricultural plant protection machine and electrostatic spray apparatus.Type: GrantFiled: October 4, 2022Date of Patent: October 22, 2024Assignee: NATIONAL FORMOSA UNIVERSITYInventors: Yu-Kai Chen, Chau-Chung Song, Hung-Yu Chen
-
Patent number: 11876631Abstract: A network information transmission method, comprising the following steps: receiving a first media information by a first terminal device; processing the first media information to obtain a processed first media information; integrating the processed first media information into a second media information to generate an integrated second media information; outputting the integrated second media information to a second terminal device through the network; decompressing the integrated second media information through the second terminal device; capturing the integrated second media information through the second terminal device; obtaining the first media information based on the integrated second media information; and playing the first media information by the second terminal device.Type: GrantFiled: January 28, 2022Date of Patent: January 16, 2024Assignee: AVERMEDIA TECHNOLOGIES, INC.Inventors: Chung-Song Kuo, Fu-Ping Wang
-
Publication number: 20230291318Abstract: A switch mode power supply circuit with high voltage output, an electrostatic spray apparatus and agricultural plant protection apparatus using the same are provided. The switch mode power supply circuit is electrically connected in series with at least a pre-stage power converter and a post-stage power converter. In order to simplify the control, the switch of the pre-stage power converter is omitted, only one switch of the post-stage power converter is adopted to perform synchronous control. Since the multiple sets of power conversion circuits in the previous stage are connected in series, the turn ratio of the transformer in the power converter in the subsequent stage can be reduced. Therefore, the transformer can be miniaturized and the power supply circuit would be more suitable for agricultural plant protection machine and electrostatic spray apparatus.Type: ApplicationFiled: October 4, 2022Publication date: September 14, 2023Inventors: YU-KAI CHEN, CHAU-CHUNG SONG, HUNG-YU CHEN
-
Publication number: 20220247592Abstract: A network information transmission method, comprising the following steps: receiving a first media information by a first terminal device; processing the first media information to obtain a processed first media information; integrating the processed first media information into a second media information to generate an integrated second media information; outputting the integrated second media information to a second terminal device through the network; decompressing the integrated second media information through the second terminal device; capturing the integrated second media information through the second terminal device; obtaining the first media information based on the integrated second media information; and playing the first media information by the second terminal device.Type: ApplicationFiled: January 28, 2022Publication date: August 4, 2022Inventors: Chung-Song KUO, Fu-Ping WANG
-
Patent number: 11398581Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.Type: GrantFiled: November 2, 2018Date of Patent: July 26, 2022Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
-
Patent number: 11239394Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light inType: GrantFiled: March 17, 2017Date of Patent: February 1, 2022Assignee: LG INNOTEK CO., LTD.Inventors: Sun Woo Park, Myung Ho Han, Hyeon Min Cho, June O Song, Chung Song Kim, Ji Hyung Moon, Sang Youl Lee
-
Patent number: 11158668Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.Type: GrantFiled: September 19, 2018Date of Patent: October 26, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Yong Tae Moon, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
-
Patent number: 11016940Abstract: Techniques for selecting a storage node of a storage system to store data include applying a first function to at least some data chunks of an extent to provide respective first values for each of the at least some data chunks. A storage node, included within multiple storage nodes of a storage system, is selected to store the extent based on a majority vote derived from the respective first values.Type: GrantFiled: November 28, 2017Date of Patent: May 25, 2021Assignee: International Business Machines CorporationInventors: Nikolas Ioannou, Ioannis Koltsidas, Roman A. Pletka, Cheng-Chung Song, Radu Stoica, Sasa Tomic, Andrew D. Walls
-
Publication number: 20210036187Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.Type: ApplicationFiled: November 2, 2018Publication date: February 4, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
-
Patent number: 10790330Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.Type: GrantFiled: November 24, 2017Date of Patent: September 29, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
-
Publication number: 20200286949Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.Type: ApplicationFiled: September 19, 2018Publication date: September 10, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Sang Youl LEE, Chung Song KIM, Yong Tae MOON, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
-
Patent number: 10755981Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.Type: GrantFiled: January 5, 2018Date of Patent: August 25, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
-
Publication number: 20200127173Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light inType: ApplicationFiled: March 17, 2017Publication date: April 23, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Sun Woo PARK, Myung Ho HAN, Hyeon Min CHO, June O SONG, Chung Song KIM, Ji Hyung MOON, Sang Youl LEE
-
Patent number: 10600936Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.Type: GrantFiled: March 28, 2017Date of Patent: March 24, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, June O Song
-
Publication number: 20200057814Abstract: Techniques for selecting a storage node of a storage system to store data include applying a first function to at least some data chunks of an extent to provide respective first values for each of the at least some data chunks. A storage node, included within multiple storage nodes of a storage system, is selected to store the extent based on a majority vote derived from the respective first values.Type: ApplicationFiled: November 28, 2017Publication date: February 20, 2020Inventors: NIKOLAS IOANNOU, IOANNIS KOLTSIDAS, ROMAN A. PLETKA, CHENG-CHUNG SONG, RADU STOICA, SASA TOMIC, ANDREW D. WALLS
-
Patent number: 10541254Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.Type: GrantFiled: October 14, 2016Date of Patent: January 21, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, June O Song
-
Publication number: 20190378873Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.Type: ApplicationFiled: November 24, 2017Publication date: December 12, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
-
Publication number: 20190378760Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.Type: ApplicationFiled: January 5, 2018Publication date: December 12, 2019Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
-
Patent number: 10483247Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.Type: GrantFiled: March 7, 2017Date of Patent: November 19, 2019Assignee: LG Innotek Co., Ltd.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, June O Song