Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Abstract: Techniques for selecting a storage node of a storage system to store data include applying a first function to at least some data chunks of an extent to provide respective first values for each of the at least some data chunks. A storage node, included within multiple storage nodes of a storage system, is selected to store the extent based on a majority vote derived from the respective first values.

Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

Abstract: One embodiment relates to a light-emitting device, a backlight unit and a lighting device. The light-emitting device of the embodiment includes a light-emitting structure and a phosphor layer disposed on the light-emitting structure. The first and second pads are electrically connected with the light-emitting structure, wherein the phosphor layer is disposed on one side of the light-emitting device, and the first and second pads are disposed on the lower part of the light-emitting device. Thus a side view-type light-emitting device having a simplified structure can be enabled. Thus, the embodiment can enable thinning and slimming by means of the simplified structure.

Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Abstract: A controller of a data storage system generates fingerprints of data blocks written to the data storage system. The controller maintains, in a data structure, respective state information for each of a plurality of data blocks. The state information for each data block can be independently set to indicate any of a plurality of states, including at least one deduplication state and at least one non-deduplication state. At allocation of a data block, the controller initializes the state information for the data block to a non-deduplication state and, thereafter, in response to detection of a write of duplicate of the data block to the data storage system, transitions the state information for the data block to a deduplication state. The controller selectively performs data deduplication for data blocks written to the data storage system based on the state information in the data structure and by reference to the fingerprints.

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M?1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1?m?M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1?n?M?1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.

Abstract: A controller of a data storage system generates fingerprints of data blocks written to the data storage system. The controller maintains, in a data structure, respective state information for each of a plurality of data blocks. The state information for each data block can be independently set to indicate any of a plurality of states, including at least one deduplication state and at least one non-deduplication state. At allocation of a data block, the controller initializes the state information for the data block to a non-deduplication state and, thereafter, in response to detection of a write of duplicate of the data block to the data storage system, transitions the state information for the data block to a deduplication state. The controller selectively performs data deduplication for data blocks written to the data storage system based on the state information in the data structure and by reference to the fingerprints.

Abstract: Techniques for selecting a storage node of a storage system to store data include applying a first function to at least some data chunks of an extent to provide respective first values for each of the at least some data chunks. A storage node, included within multiple storage nodes of a storage system, is selected to store the extent based on a majority vote derived from the respective first values.

Abstract: Techniques for selecting a storage node of a storage system to store data include applying a first function to at least some data chunks of an extent to provide respective first values for each of the at least some data chunks. A storage node, included within multiple storage nodes of a storage system, is selected to store the extent based on a majority vote derived from the respective first values.

Abstract: Provided are a computer program product, system, and method for managing caching of extents of tracks in a first cache, second cache and storage device. A determination is made of an eligible track in a first cache eligible for demotion to a second cache, wherein the tracks are stored in extents configured in a storage device, wherein each extent is comprised of a plurality of tracks. A determination is made of an extent including the eligible track and whether second cache caching for the determined extent is enabled or disabled. The eligible track is demoted from the first cache to the second cache in response to determining that the second cache caching for the determined extent is enabled. Selection is made not to demote the eligible track in response to determining that the second cache caching for the determined extent is disabled.

Abstract: A data storage system includes a pre-cache and a plurality of storage devices across which a data storage array is distributed. In response to receipt of a write request specifying a logical address and write data, the data storage system buffers the write request among a plurality of write requests in the pre-cache without provisioning in the data storage array a physical extent corresponding to the logical address. A management node analyzes the plurality of write requests buffered in the pre-cache. In response to the analyzing identifying a first pattern of write requests, the management node provisions, in the data storage array, a first physical extent having a smaller grain size and destages the write data to the first physical extent. In response to the analyzing identifying a second pattern of write requests, the management node provisions a second physical extent having a larger grain size and destages the write data from the pre-cache to the second physical extent.

Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M?1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1?m?M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1?n?M?1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.

Abstract: Techniques for selecting a storage node of a storage system to store data include applying a first function to at least some data chunks of an extent to provide respective first values for each of the at least some data chunks. A storage node, included within multiple storage nodes of a storage system, is selected to store the extent based on a majority vote derived from the respective first values.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.

Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.