Abstract: In some embodiments, a method for forming an integrated chip (IC) is provided. The method incudes forming an interlayer dielectric (ILD) layer over a substrate. A first opening is formed in the ILD layer and in a first region of the IC. A second opening is formed in the ILD layer and in a second region of the IC. A first high-k dielectric layer is formed lining both the first and second openings. A second dielectric layer is formed on the first high-k dielectric layer and lining the first high-k dielectric layer in both the first and second regions. The second high-k dielectric layer is removed from the first region. A conductive layer is formed over both the first and second high-k dielectric layers, where the conductive layer contacts the first high-k dielectric layer in the first region and contacts the second high-k dielectric in the second region.

Abstract: A multi-band antenna includes a lower grounding portion, a feed-in portion, a feeding point, an upper grounding portion, a first extending portion, a second extending portion, a third extending portion, a fourth extending portion, a fifth extending portion, a first branch, a second branch, a third branch and a loop portion. The feed-in portion, the first extending portion, the second extending portion, the third extending portion, the fourth extending portion and the first branch form a first radiation portion. The feed-in portion, the first extending portion, the second extending portion, the third extending portion, the fifth extending portion and the second branch form a second radiation portion. The feed-in portion, the first extending portion, the second extending portion and the third branch form a third radiation portion.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a dielectric fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric fin. The semiconductor device includes a gate structure extending along a second direction perpendicular to the first direction. The gate structure includes a first portion and a second portion separated by the gate isolation structure and the dielectric fin. The first portion of the gate structure presents a first beak profile and the second portion of the gate structure presents a second beak profile. The first and second beak profiles point toward each other.

Abstract: A micro-electro-mechanical system (MEMS) microphone package is provided. The MEMS microphone package includes a first micro-electro-mechanical system (MEMS) sensor die, an integrated circuit (IC) die and a first conductive lid. The first micro-electro-mechanical system (MEMS) sensor die has a first surface and a second surface opposite to the first surface. The IC die is stacked on the first surface of the first MEMS sensor die. The first conductive lid is disposed on the second surface of the first MEMS sensor die.

Abstract: A semiconductor device includes a plurality of fins on a substrate, a fin end spacer plug on an end surface of each of the plurality of fins and a fin liner layer, an insulating layer on the plurality of fins, and a source/drain epitaxial layer in a source/drain recess in each of the plurality of fins.

Abstract: A semiconductor device includes a plurality of semiconductor layers arranged one above another, and source/drain epitaxial regions on opposite sides of the plurality of semiconductor layers. The semiconductor device further includes a gate structure surrounding each of the plurality of semiconductor layers. The gate structure includes interfacial layers respectively over the plurality of semiconductor layers, a high-k dielectric layer over the interfacial layers, and a gate metal over the high-k dielectric layer. The gate structure further includes gate spacers spacing apart the gate structure from the source/drain epitaxial regions. A top position of the high-k dielectric layer is lower than top positions of the gate spacers.

Abstract: An embodiment semiconductor device may include a semiconductor die; one or more redistribution layers formed on a surface of the semiconductor die and electrically coupled to the semiconductor die; and an active or passive electrical device electrically coupled to the one or more redistribution layers. The active or passive electrical device may include a silicon substrate and a through-silicon-via formed in the silicon substrate. The active or passive electrical device may be configured as an integrated passive device including a deep trench capacitor or as a local silicon interconnect. The semiconductor device may further include a molding material matrix formed on a surface of the one or more redistribution layers such that the molding material matrix partially or completely surrounds the active or passive electrical device.

Abstract: A light-emitting diode device including a pixel structure including first, second and third light-emitting diode chips, a passivation layer, and first, second, third and fourth circuit layers is provided. The first and second light-emitting diode chips are positioned on a top surface opposite to a light-emitting surface of the third light-emitting diode chip. First and second vertical projections of the first and second light-emitting diode chips on the top surface do not overlap each other. First and second bonding surfaces of the first and second circuit layers corresponding to openings in the passivation layer are positioned to overlap the first vertical projection and are separated from the second vertical projection. Third and fourth bonding surfaces of the third and fourth circuit layers that correspond to openings in the passivation layer are positioned to overlap the second vertical projection and are separated from the first vertical projection.

Abstract: An integrated circuit package structure includes a circuit board, an integrated circuit die and a conductive stair structure. The circuit has an upper surface. The integrated circuit die is located on the upper surface of the circuit board. The conductive stair structure is located on the upper surface of the circuit board. The conductive stair structure includes steps along a first direction substantially perpendicular to the upper surface of the circuit board. The steps have different heights relative to the upper surface of the circuit board.

Abstract: There is provided a moving robot including a first light source module and a second light source module respectively project a first light section and a second light section, which are vertical light sections, in front of a moving direction, wherein the first light section and the second light section cross with each other at a predetermined distance in front of the moving robot so as to eliminate a detection dead zone between the first light source module and the second light source module in front of the moving robot to avoid collision with an object during operation.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a dielectric fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric fin. The semiconductor device includes a gate structure extending along a second direction perpendicular to the first direction. The gate structure includes a first portion and a second portion separated by the gate isolation structure and the dielectric fin. The first portion of the gate structure presents a first beak profile and the second portion of the gate structure presents a second beak profile. The first and second beak profiles point toward each other.

Abstract: A method of manufacturing a capacitor structure includes the following. A first, second, third, fourth, fifth, sixth and seventh portions of a contact layer arrange from periphery to center. A first-conductive layer contacting the first portion forms in an opening. A first-dielectric layer contacting the second portion forms on the first-conductive layer. A second-conductive layer forms on the first-dielectric layer. A second-dielectric layer contacting the third portion forms on the second-conductive layer. A third-conductive layer contacting the fourth portion forms on the second-dielectric layer. A third-dielectric layer contacting the fifth portion forms on the third-conductive layer. A fourth-conductive layer contacting the second-conductive layer forms on the third-dielectric layer. A fourth-dielectric layer contacting the sixth portion forms on the fourth-conductive layer. A fifth-conductive layer contacting the seventh portion forms on the fourth-dielectric layer.

Abstract: Methods for resistance welding, resistance-welded assemblies, and vehicles including resistance-welded assemblies are provided. An exemplary resistance welding method includes compressing a workpiece stack-up with an interface material between first and second workpieces to squeeze a portion of the interface material to a reduced thickness. After compressing the workpiece stack-up, the first welding electrode contacts the first workpiece at an operating contact area between the first welding electrode and the first workpiece that is greater than an initial contact area. The method also includes passing an electrical current between the welding electrodes to form a molten weld pool within the workpieces, and ceasing the passing of the electrical current between the welding electrodes to allow the molten weld pool to solidify into a weld nugget that forms all or part of a weld joint between the workpieces.

Abstract: A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.

Abstract: A semiconductor device includes source and a drain above a substrate and spaced apart along a first direction, and a semiconductor channel extending between the source and the drain. The semiconductor device further includes gate spacers, an interfacial layer, and a metal gate structure. The gate spacers are disposed on the semiconductor channel and spaced apart by a spacer-to-spacer distance along the first direction. The interfacial layer is on the semiconductor channel. The interfacial layer extends a length along the first direction, and the length is less than a minimum of the spacer-to-spacer distance along the first direction. The metal gate structure is over the interfacial layer.

Abstract: An antenna structure includes a substrate, a radiator mounted at an upper portion of a front surface of the substrate, and a grounding element mounted at a lower portion of the front surface of the substrate. The radiator has a first radiating portion. A lower edge of the first radiating portion extends downward to form a second radiating portion. Two portions of a middle of the lower edge of the first radiating portion extend downward to form a third radiating portion and a feeding portion. A free end of the feeding portion is a feeding end. One side edge of the first radiating portion is recessed inward to form a recess. The grounding element has a first grounding portion and a second grounding portion. The first grounding portion and the second grounding portion are located to two sides of the feeding portion, respectively.

Abstract: An antenna structure includes a substrate, a radiator mounted at one end of a front surface of the substrate, and a grounding element mounted at the other end of the front surface of the substrate. The radiator has a first radiating portion. Two portions of a middle of one end edge of the first radiating portion extend horizontally to form a second radiating portion and a feeding portion. The feeding portion is located above the second radiating portion. A free end of the feeding portion is a feeding end. An upper portion of the other end edge of the first radiating portion extends opposite to the one end edge of the first radiating portion and extends along a rectangular spiral path to form a rectangular spiral third radiating portion.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: Provided is a medical image analyzing system and a method thereof, which includes: acquiring a processed image having a segmentation label corresponding to a cancerous part of an organ (if present), generating a plurality of image patches therefrom, performing feature analysis on the image patches and model training to obtain prediction values, drawing a receiver operating characteristic curve using the prediction values, and determining a threshold with which determines whether the image patches are cancerous, so as to effectively improve the detection rate of, for example, pancreatic cancer.