Abstract: A method of joining a multiple member work-piece includes providing a first steel work-piece having a first thickness and a second steel work-piece having a second thickness. The first thickness is at least twice the second thickness. A third material is disposed in contact with the second steel work-piece. For example, the third material may be in the form of a rivet, a plurality of pins, or a coating material. The method includes resistance welding the first and second work-pieces together. A bonded assembly includes the first and second steel members and the third material being bonded together, where the thickness of the first member is at least twice the thickness of the second member.

Abstract: A fastening assembly includes: a panel defining an aperture; a fastener having a cap and a shaft extending from the cap, the shaft being disposed through the aperture, the fastener having a first corrosion rate, and the fastener including: a recess formed in the cap and extending at least partially around the shaft; face surfaces that are planar and that are to directly contact the panel; and recessed channels that are disposed between the face surfaces, respectively, that are recessed relative to the face surfaces, and that extend from a radially outer edge of the cap to the recess; and an anode insert disposed in the recess and having a second corrosion rate that is faster than the first corrosion rate.

Abstract: Systems, methods, and apparatuses of a welding system are disclosed and include a first stage of a scanning device for scanning weld parts to generate a three-dimensional (3D) profile of a weld target wherein the 3D profile captures matching imperfections of a meeting together of the set of weld parts when performing the weld operation; and the second stage of a monitoring device to monitor the weld operation and to generate a data of high-resolution measurements of the weld operation; wherein the first stage further includes the monitoring device determining a weld schedule based on the 3D profile, and to adjust the weld schedule while the weld operation progresses to adapt to predicted distortion based on the 3D profile and to sensed distortion; wherein the second stage further includes a plurality of sensors to sense a set of components associated with the weld operation to generate high-resolution data of measurements.

Abstract: An image generation method obtains an original image. A character area, a background area, and a position of each flawless character in the original image are determined. The character area is segmented to obtain a first image of each flawless character. A background is removed from the first image to obtain a second image. First image processing is performed on the second image to obtain a third image. Second image processing is performed on the second image to obtain fourth images. Third image processing is performed on the fourth images respectively to obtain fifth images. A similarity between each fifth image and the third image is calculated. When the similarity is greater than a defect threshold, a background image is segmented. Brightness of the background image is adjusted. The target fourth image and adjusted background image are synthesized. The method can generate images with defective characters quickly.

Abstract: A boot method for an embedded system is provided. The embedded system includes two mainboards each provided with a baseboard management controller (BMC), a non-volatile memory unit and a network adapter. When the embedded system is turned on, each of the BMCs performs a boot procedure, and then loads an operating system (OS) image file from a corresponding non-volatile memory unit to execute an operating system. When one BMC fails to load the OS image file or to execute the operating system, the BMC causes the corresponding network adapter to communicate with the other network adapter to acquire the OS image file from, the non-volatile memory unit on the other mainboard, so as to replace the OS image file in the corresponding non-volatile memory unit, and directly loads the OS image thus acquired to execute the operating system.

Abstract: A method of forming an assembly includes providing a metallic first workpiece having base and a first layer disposed on the base and adhering a second layer onto the first layer. One of the first and second layers is formed of a zinc-based material formed of at least a majority of zinc, and the other of the first and second layers is formed of a metallic alloying material having a melting point higher than the melting point of the zinc-based material. Preferably, the first layer is formed of the zinc-based material, and the second layer is formed of the metallic alloying material with the higher melting point. A metallic second workpiece is disposed in contact with the second layer. A welding operation is performed to join the first workpiece to the second workpiece. A welded assembly is also provided.

Abstract: A riveting system, for use in mechanically linking adjacent workpieces, including a rivet having a height greater than a sum of thicknesses, measured along a line of riveting, of the workpieces being linked, so that the rivet can pass fully through the workpieces. The system also includes a riveting die, which may be a separate product. The die includes a protrusion extending from a peak toward a transition point; and a trough having a trough surface. The trough surface includes a trough inner wall, extending from the transition point to a trough bottom, and a trough outer wall, extending from the trough bottom to a trough outer edge. The technology also includes computerized systems for comparing a load-displacement profile of riveting to a pre-set profile to determine whether the riveting was performed properly.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a dielectric fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric fin. The semiconductor device includes a gate structure extending along a second direction perpendicular to the first direction. The gate structure includes a first portion and a second portion separated by the gate isolation structure and the dielectric fin. The first portion of the gate structure presents a first beak profile and the second portion of the gate structure presents a second beak profile. The first and second beak profiles point toward each other.

Abstract: A multi-band antenna includes a lower grounding portion, a feed-in portion, a feeding point, an upper grounding portion, a first extending portion, a second extending portion, a third extending portion, a fourth extending portion, a fifth extending portion, a first branch, a second branch, a third branch and a loop portion. The feed-in portion, the first extending portion, the second extending portion, the third extending portion, the fourth extending portion and the first branch form a first radiation portion. The feed-in portion, the first extending portion, the second extending portion, the third extending portion, the fifth extending portion and the second branch form a second radiation portion. The feed-in portion, the first extending portion, the second extending portion and the third branch form a third radiation portion.

Abstract: An integrated circuit package structure includes a circuit board, an integrated circuit die and a conductive stair structure. The circuit has an upper surface. The integrated circuit die is located on the upper surface of the circuit board. The conductive stair structure is located on the upper surface of the circuit board. The conductive stair structure includes steps along a first direction substantially perpendicular to the upper surface of the circuit board. The steps have different heights relative to the upper surface of the circuit board.

Abstract: A multi-band antenna includes a grounding portion, a feed-in portion, a feeding point, a first radiation portion, a second radiation portion, a third radiation portion and a fourth radiation portion. The feed-in portion has a first end edge, a second end edge, a first side edge and a second side edge. The feeding point is disposed at the feed-in portion. The first radiation portion is extended from the grounding portion. The second radiation portion is extended from the second end edge. The third radiation portion is extended from the first end edge. The fourth radiation portion is extended from an upper portion of the first end edge and an upper portion of the second end edge.

Abstract: A semiconductor device includes a first fin and a second fin in a first direction and aligned in the first direction over a substrate, an isolation insulating layer disposed around lower portions of the first and second fins, a first gate electrode extending in a second direction crossing the first direction and a spacer dummy gate layer, and a source/drain epitaxial layer in a source/drain space in the first fin. The source/drain epitaxial layer is adjacent to the first gate electrode and the spacer dummy gate layer with gate sidewall spacers disposed therebetween, and the spacer dummy gate layer includes one selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbon nitride, and silicon carbon oxynitride.

Abstract: A system and method of enhanced automated welding of a first workpiece and a second workpiece are provided. The method comprises providing a system for intelligent robot-based welding of the first workpiece and the second workpiece. The method further comprises determining a geometrical location of the first workpiece and the second workpiece to be welded at a welding sequence based a predetermined process variable. The method further comprises adjusting the predetermined process variable based on the geometrical location of the first and second workpieces to define an actual process variable. The method further comprises welding a first portion of the first and second workpieces with the actual process variable to define a first welded portion. The method further comprises determining a weld quality of the first welded portion.

Abstract: A light-emitting diode structure includes a light-emitting part and a reflective part. The light-emitting part has a light-emitting surface. The reflective part is on the light-emitting part opposite to the light-emitting surface. The reflective part is a gradient distributed Bragg reflection structure and includes a plurality of first dielectric layers and a plurality of second dielectric layers. The second dielectric layers have a refractive index different from that of the first dielectric layer, and are alternately stacked with the first dielectric layers. Each of the first dielectric layers has a different optical thickness, and each of the second dielectric layers has a different optical thickness. The optical thicknesses of the first dielectric layers and the second dielectric layers vary in a gradient way away from the light-emitting part.

Abstract: A capacitor structure is provided, which includes a contact layer, an insulating layer, a bottom conductive plate, a dielectric layer and a top conductive plate. The contact layer has first, second, third, fourth and fifth portions arranged from periphery to center. The insulating layer is disposed over the contact layer and has an opening exposing the contact layer. The bottom conductive plate is disposed in the opening and including first, second and third portions extending along a depth direction of the opening and separated from each other and in contact with the first, third and fifth portions of the contact layer, respectively. The dielectric layer is conformally disposed on the bottom conductive plate and in contact with the second and fourth portions of the contact layer. The top conductive plate is disposed on the dielectric layer. A method of manufacturing the capacitor is also provided.

Abstract: A semiconductor device and method of fabricating a semiconductor device involves formation of a trench above a fin (e.g. a fin of a FinFET device) of the semiconductor device and formation of a multi-layer dielectric structure within the trench. The profile of the multi-layer dielectric structure can be controlled depending on the application to reduce shadowing effects and reduce cut failure risk, among other possible benefits. The multi-layer dielectric structure can include two layers, three layers, or any number of layers and can have a stepped profile, a linear profile, or any other type of profile.

Abstract: A self-monitoring tire includes a tire body and a tire pressure sensor. The tire body includes a tread rubber for contact with ground, a bead for coupling to a rim, and a sidewall structure including two portions disposed at opposite sides of the tread rubber, and extending from opposite sides of the tread rubber to the bead. The tire pressure sensor is disposed between respective outward surfaces of the two portions of the sidewall structure, and secured on or embedded in either one of the two portions of the sidewall structure.

Abstract: A power supply system includes an output terminal, a power supply control chip, a power supply switch and a detection device. The power supply control chip is configured to adjust the amount of an input power providing to an electronic device by the power supply device. The power supply switch is configured to control the connection between the power supply device and the power supply control chip. The detection device is configured to detect whether the power supply control chip operates normally. When the power supply control chip operates abnormally, the detection device controls the connection between the power supply device and the power supply control chip through the power supply switch for restarting the power supply control chip. The power supply control chip, the power supply switch and the detection device are disposed in an enclosed space.

Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.