Abstract: A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.

Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.

Abstract: A method of aligning two wafers during a bonding process includes aligning a first wafer having a plurality of alignment markings with a second wafer having a plurality of alignment markings. The method further includes placing a plurality of flags between the first wafer and the second wafer. The method further includes detecting movement of the plurality of flags with respect to the first wafer and the second wafer using at least one sensor. The method further includes determining whether the wafers remain aligned within an alignment tolerance based on the detected movement of the plurality of flags relative to the first wafer and the second wafer.

Abstract: An apparatus includes an alignment module configured to align a first wafer and a second wafer based on alignment markers on the first wafer and corresponding alignment markers on the second wafer. The apparatus further includes a flag placement module configured to insert a plurality of flags between the first wafer and the second wafer, a flag-out mechanism configured to simultaneously move the plurality of flags to a flag-out position, and a controller configured to determine whether the wafers remain aligned within an alignment tolerance based on an amount of time for each flag of the plurality of flags to reach the flag-out position.

Abstract: The present disclosure relates to a method of forming a deep trench capacitor. In some embodiments, the method may be performed by selectively etching a substrate to form a trench having serrated sidewalls defining a plurality of curved depressions. A dielectric material is formed within the trench. The dielectric material conformally lines the serrated sidewalls. A conductive material is deposited within the trench and is separated from the substrate by the dielectric material. The dielectric material is configured to act as a capacitor dielectric between a first electrode comprising the conductive material and a second electrode arranged within the substrate.

Abstract: An apparatus includes an alignment module configured to align a first wafer and a second wafer based on alignment markers on the first wafer and corresponding alignment markers on the second wafer. The apparatus further includes a flag placement module configured to insert a plurality of flags between the first wafer and the second wafer, a flag-out mechanism configured to simultaneously move the plurality of flags to a flag-out position, and a controller configured to determine whether the wafers remain aligned within an alignment tolerance based on an amount of time for each flag of the plurality of flags to reach the flag-out position.

Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

Abstract: An apparatus includes a bonding system configured to bond at least two wafers. The bonding system has a flag-out mechanism configured to remove a plurality of flags from an area between the at least two wafers. The apparatus also includes sensors configured to detect data related to a flag-out condition of the flags of the plurality of flag. The apparatus further includes at least one processor configured to receive inputs from the sensors, to calculate at least one value related to flag-out timing, and to drive a display indicating an alignment of the at least two wafers.

Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

Abstract: The present disclosure relates to a method of forming a deep trench capacitor. In some embodiments, the method may be performed by selectively etching a substrate to form a trench having serrated sidewalls defining a plurality of curved depressions. A dielectric material is formed within the trench. The dielectric material conformally lines the serrated sidewalls. A conductive material is deposited within the trench and is separated from the substrate by the dielectric material. The dielectric material is configured to act as a capacitor dielectric between a first electrode comprising the conductive material and a second electrode arranged within the substrate.

Abstract: A method of fabricating a micro electro mechanical system (MEMS) structure includes providing a first substrate structure including a bonding pad structure. The bonding pad structure has at least one recess therein. A second substrate structure is provided and bonded with the bonding pad structure of the first substrate structure.

Abstract: The present disclosure relates to an integrated chip having a deep trench capacitor with serrated sidewalls defining curved depressions, and a method of formation. In some embodiments, the integrated chip includes a substrate having a trench with serrated sidewalls defining a plurality of curved depressions. A layer of dielectric material conformally lines the serrated sidewalls, and a layer of conductive material is arranged within the trench and is separated from the substrate by the layer of dielectric material. The layer of dielectric material is configured as a capacitor dielectric between a first electrode comprising the layer of conductive material and a second electrode arranged within the substrate.

Abstract: A wafer seal ring may be formed on a first and/or a second wafer. One or both of the first and/or second wafers may have one or more dies formed thereon. The wafer seal ring may be formed to surround the dies of a corresponding wafer. One or more die seal rings may be formed around the one or more dies. The wafer seal ring may be formed to a height that may be approximately equal to a height of one or more die seal rings formed on the first and/or second wafer. The wafer seal ring may be formed to provide for eutectic or fusion bonding processes. The first and second wafers may be bonded together to form a seal ring structure between the first and second wafers. The seal ring structure may provide a hermetic seal between the first and second wafers.

Abstract: A semiconductor structure and a fabricating process for the same are provided. The semiconductor structure includes a micro battery cell coupled to a solar cell by a semiconductor fabricating process.

Abstract: Embodiments of an image-sensor device structure and a method of manufacturing thereof are provided. The image-sensor device structure includes a semiconductor substrate and a light-sensing region in the semiconductor substrate. The image-sensor device structure also includes an interconnect structure over the semiconductor substrate, and the interconnect structure includes a transparent dielectric layer over the light-sensing region. The transparent dielectric layer has an optical transmittance ranging from about 90% to about 97%.

Abstract: A wafer seal ring may be formed on a first and/or a second wafer. One or both of the first and/or second wafers may have one or more dies formed thereon. The wafer seal ring may be formed to surround the dies of a corresponding wafer. One or more die seal rings may be formed around the one or more dies. The wafer seal ring may be formed to a height that may be approximately equal to a height of one or more die seal rings formed on the first and/or second wafer. The wafer seal ring may be formed to provide for eutectic or fusion bonding processes. The first and second wafers may be bonded together to form a seal ring structure between the first and second wafers. The seal ring structure may provide a hermetic seal between the first and second wafers.

Abstract: A method for fabricating a semiconductor apparatus including providing a first silicon substrate having a first contact, wherein providing the first silicon substrate comprises forming a silicide layer between the first silicon substrate and a first metal layer. The method further includes providing a second silicon substrate having a second contact comprising a second metal layer and placing the first contact in contact with the second contact. The method further includes heating the first and second metal layers to form a metallic alloy, whereby the metallic alloy bonds the first contact to the second contact.

Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

Abstract: A wafer seal ring may be formed on a first and/or a second wafer. One or both of the first and/or second wafers may have one or more dies formed thereon. The wafer seal ring may be formed to surround the dies of a corresponding wafer. One or more die seal rings may be formed around the one or more dies. The wafer seal ring may be formed to a height that may be approximately equal to a height of one or more die seal rings formed on the first and/or second wafer. The wafer seal ring may be formed to provide for eutectic or fusion bonding processes. The first and second wafers may be bonded together to form a seal ring structure between the first and second wafers. The seal ring structure may provide a hermetic seal between the first and second wafers.

Abstract: In accordance with some embodiments, systems and methods for processing a semiconductor substrate are provided. The method includes loading a semiconductor substrate from a chamber to a transfer module, detecting a center and a notch of the semiconductor substrate by the transfer module, and transferring the semiconductor substrate from the transfer module to a process chamber.