Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)2(OR)2??Formula I, M(?O)(NR2)4??Formula II, M(?O)2(NR2)2??Formula III, M(?NR)2(OR)2??Formula IV, and M(?O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2 ??Formula I, M(=O)(NR2)4 ??Formula II, M(=O)2(NR2)2 ??Formula III, M(=NR)2(OR)2 ??Formula IV, and M(=O)(OR)4 ??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.

Abstract: Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Disclosed are Niobium-containing film forming compositions, methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via atomic layer deposition processes using the Niobium-containing film forming compositions.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)2(OR)2 ??Formula I, M(?O)(NR2)4 ??Formula II, M(?O)2(NR2)2 ??Formula III, M(?NR)2(OR)2 ??Formula IV, and M(?O)(OR)4 ??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.

Abstract: Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.

Abstract: Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formula: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.

Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)(NR2)4 Formula I, M(=O)2(NR2)2 Formula II, and M(=NR)2(OR)2 Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Niobium Nitride film forming compositions, methods of synthesizing the same, and methods of forming Niobium Nitride films on one or more substrates via vapor deposition processes using the Niobium Nitride film forming precursors.

Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Niobium-containing film forming compositions, methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via atomic layer deposition processes using the Niobium-containing film forming compositions.

Abstract: Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R5Cp)2(L), wherein each R is independently H, an alkyl group, or R?3Si, with each R? independently being H or an alkyl group; L is selected from the group consisting of formamidinates (NR,R?-fmd) or amidinates (NR,R?R?-amd).

Abstract: Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.