Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract: Disclosed are manganese-containing precursors having the formula (I): wherein each R1 through R5 is independently selected from H; C1-C4 linear or branched alkyl group; C1-C4 linear, branched, or cyclic alkylsilyl group; C1-C4 alkylamino group; and a C1-C4 linear or branched fluoroalkyl group. Also disclosed are method of making the disclosed manganese-containing precursors and methods of using the disclosed manganese-containing precursors to deposit Mn-containing films on a substrate.

Abstract: The present invention discloses metallic complexes based on hydroxyl-carbonyl fulvene ligands, their method of preparation and their use in the oligomerization or polymerization of ethylene and alpha-olefins.

Abstract: Disclosed are nickel allyl amidinate precursors having the formula: wherein each of R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group, a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit nickel-containing films on one or more substrates via a vapor deposition process.

Abstract: The present invention discloses metallic complexes based on carbonylamino fulvene ligands; their method of preparation and their use in the oligomerisation or polymerisation of ethylene and alpha-olefins.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: The present invention relates to a process for the use of Ruthenium amidinate metal precursors for the deposition of Ruthenium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Abstract: The disclosure relates to a process for depositing a Nickel or Cobalt containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.

Abstract: The present invention relates to a process for the use of Titanium amidinate metal precursors for the deposition of Titanium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Abstract: The disclosure relates to a process for depositing a Manganese-containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.

Abstract: The disclosure relates to a process for depositing a Copper, Gold or Silver containing film using a Copper, Gold or Silver guanidinate and/or Copper, Gold or Silver amidinate precursor, suitable for plasma deposition at temperature equal or lower than 120 degrees C., to a plasma deposition process carried out at a temperature equal or lower than 120 degrees C.

Abstract: Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N?-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract: Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Abstract: Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF2, at temperatures ranging from about 25° C. to about 300° C., preferably from about 50° C. to about 250° C., and more preferably from about 100° C. to about 200° C.