Patents by Inventor Clément Lansalot-Matras

Clément Lansalot-Matras has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GROUP 6 TRANSITION METAL-CONTAINING COMPOUNDS FOR VAPOR DEPOSITION OF GROUP 6 TRANSITION METAL-CONTAINING FILMS
    Publication number: 20170268107
    Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)(NR2)4 Formula I, M(?O)2(NR2)2 Formula II, and M(?NR)2(OR)2 Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: August 11, 2015
    Publication date: September 21, 2017
    Inventors: Clement LANSALOT-MATRAS, Julien LIEFFRIG, Christian DUSSARRAT, Antoine COLAS, Jong Min KIM
  • Tantalum-containing film forming compositions and vapor deposition of tantalum-containing films
    Patent number: 9748249
    Abstract: Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on one or more substrates via vapor deposition processes using the Tantalum-containing film forming composition.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: August 29, 2017
    Assignee: L'Air Liquide, Société Anonyme l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Wontae Noh
  • Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films
    Patent number: 9691771
    Abstract: Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming compositions.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: June 27, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Wontae Noh
  • Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films
    Patent number: 9691770
    Abstract: Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming composition.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: June 27, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Wontae Noh
  • NIOBIUM-NITRIDE FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF NIOBIUM-NITRIDE FILMS
    Publication number: 20170152144
    Abstract: Disclosed are Niobium Nitride film forming compositions, methods of synthesizing the same, and methods of forming Niobium Nitride films on one or more substrates via vapor deposition processes using the Niobium Nitride film forming precursors.
    Type: Application
    Filed: November 30, 2015
    Publication date: June 1, 2017
    Inventors: Clément Lansalot-Matras, Julien Lieffrig, Jooho Lee, Wontae Noh
  • Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
    Patent number: 9663547
    Abstract: Disclosed are Silicon- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing thin films on substrates via vapor deposition processes.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: May 30, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clement Lansalot-Matras, Julien Lieffrig, Hana Ishii, Christian Dussarrat
  • GERMANIUM- AND ZIRCONIUM-CONTAINING COMPOSITION FOR VAPOR DEPOSITION OF ZIRCONIUM-CONTAINING FILMS
    Publication number: 20170050999
    Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: October 19, 2016
    Publication date: February 23, 2017
    Inventors: Clément LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII, Christian DUSSARRAT
  • HAFNIUM-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF HAFNIUM-CONTAINING FILMS
    Publication number: 20170044199
    Abstract: Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, Fe, R9 and R19 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.
    Type: Application
    Filed: October 28, 2016
    Publication date: February 16, 2017
    Inventors: Christian DUSSARRAT, Jean-Marc GIRARD, Hana ISHII, Clément LANSALOT-MATRAS, Julien LIEFFRIG
  • HAFNIUM-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF HAFNIUM-CONTAINING FILMS
    Publication number: 20170044664
    Abstract: Disclosed are Hafnium-containing film forming compositions comprising Germanium- and Hafnium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: October 28, 2016
    Publication date: February 16, 2017
    Inventors: Christian DUSSARRAT, Jean-Marc GIRARD, Hana ISHII, Clément LANSALOT-MATRAS, Julien LIEFFRIG
  • HETEROLEPTIC DIAZADIENYL GROUP 4 TRANSITION METAL-CONTAINING COMPOUNDS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS
    Publication number: 20170018425
    Abstract: Disclosed are Group 4 transition metal-containing thin film forming precursors. Also disclosed are vapor deposition methods using the disclosed precursors to deposit Group 4 transition metal-containing thin films on one or more substrates.
    Type: Application
    Filed: March 12, 2015
    Publication date: January 19, 2017
    Inventors: Clément LANSALOT-MATRAS, Jooho LEE, Julien LIEFFRIG
  • Group 5 cyclopentadienyl transition metal-containing precursors for deposition of group 5 transition metal-containing films
    Patent number: 9518075
    Abstract: Transition metal-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit transition metal-containing films on one or more substrates via a vapor deposition process.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: December 13, 2016
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Wontae Noh
  • Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
    Patent number: 9499571
    Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: November 22, 2016
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clement Lansalot-Matras, Julien Lieffrig, Hana Ishii, Christian Dussarrat
  • PROCESS FOR FORMING GATE INSULATORS FOR TFT STRUCTURES
    Publication number: 20160315168
    Abstract: Precursors suitable for vapor deposition of layers in thin film transistors and electronic devices comprising such thin film transistors are disclosed.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: Christian DUSSARRAT, Clément LANSALOT-MATRAS, Antoine COLAS
  • PROCESS FOR FORMING GATE INSULATORS FOR TFT STRUCTURES
    Publication number: 20160315163
    Abstract: Precursors suitable for vapor deposition of layers in thin film transistors and electronic devices comprising such thin film transistors are disclosed.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: CHRISTIAN DUSSARRAT, CLÉMENT LANSALOT-MATRAS, ANTOINE COLAS
  • VANADIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF VANADIUM-CONTAINING FILMS
    Publication number: 20160304542
    Abstract: Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming composition.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 20, 2016
    Inventors: Clément LANSALOT-MATRAS, Wontae Noh
  • TANTALUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF TANTALUM-CONTAINING FILMS
    Publication number: 20160307708
    Abstract: Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on one or more substrates via vapor deposition processes using the Tantalum-containing film forming compositions.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 20, 2016
    Inventors: Clément LANSALOT-MATRAS, Wontae NOH
  • VANADIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF VANADIUM-CONTAINING FILMS
    Publication number: 20160307905
    Abstract: Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming compositions.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 20, 2016
    Inventors: Clément LANSALOT-MATRAS, Wontae NOH
  • NIOBIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF NIOBIUM-CONTAINING FILMS
    Publication number: 20160307902
    Abstract: Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 20, 2016
    Inventors: Clément LANSALOT-MATRAS, Wontae NOH
  • TANTALUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF TANTALUM-CONTAINING FILMS
    Publication number: 20160307903
    Abstract: Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on one or more substrates via vapor deposition processes using the Tantalum-containing film forming composition.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 20, 2016
    Inventors: Clément LANSALOT-MATRAS, Wontae NOH
  • NIOBIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF NIOBIUM-CONTAINING FILMS
    Publication number: 20160307904
    Abstract: Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 20, 2016
    Inventors: Clément LANSALOT-MATRAS, Wontae NOH