Abstract: An optical sensing device includes a plurality of scanning lines having a plurality of first scanning lines and a plurality of second scanning lines, a plurality of sensing lines, a plurality of reading lines, and a plurality of optical sensing modules electrically connected to the scanning lines. Each optical sensing module includes a first optical sensing unit and a second optical sensing unit, each of which includes a sensing unit, a charge storage unit, and a reading unit. The optical sensing module further includes a plurality of differential amplifiers electrically connected to the corresponding reading lines, for determining the difference between the reading lines, wherein the difference indicates the ambient light variation. A first transistor of the sensing unit of the first optical sensing unit is different to a first transistor of the sensing unit of the second sensing unit in channel width.

Abstract: A manufacturing method of a sensor device integrated with ultrasonic transducer and microphone is to form a first support structure, a back plate, a second support structure, a membrane and electrodes on a substrate. The substrate is divided into a first region and a second region. The first electrode, the third electrode, a part of the back plate, a part of the second support structure and a part of the membrane that are above the first region form the ultrasonic transducer. The first support structure, the second electrode, the fourth electrode, a part of the back plate, a part of the second support structure and a part of the membrane that are above the second region form the microphone. The ultrasonic transducer and the microphone are simultaneously manufactured.

Abstract: An OTP memory cell and an OTP memory circuit. The OTP memory cell having a memory module, a write module, a read module, and a load module. Data may be written into the memory module once the write module is active; and data may be read out of the memory module once the read module is active. The OTP memory cell may also have a first latch module and a second latch module.

Abstract: The present invention provides a method for preparing an ultra-thin material on insulator through adsorption by a doped ultra-thin layer. In the method, first, an ultra-thin doped single crystal film and an ultra-thin top film (or contains a buffer layer) are successively and epitaxially grown on a first substrate, and then a high-quality ultra-thin material on insulator is prepared through ion implantation and a bonding process. A thickness of the prepared ultra-thin material on insulator ranges from 5 nm to 50 nm. In the present invention, the ultra-thin doped single crystal film adsorbs the implanted ion, and a micro crack is then formed, so as to implement ion-cut; therefore, the roughness of a surface of a ion-cut material on insulator is small.

Abstract: An OTP memory cell and an OTP memory circuit. The OTP memory cell having a memory module, a write module, a read module, and a load module. Data may be written into the memory module once the write module is active; and data may be read out of the memory module once the read module is active. The OTP memory cell may also have a first latch module and a second latch module.

Abstract: An electronic device is provided. The electronic device includes a printed circuit board (PCB), an antenna structure, a radio frequency signal transceiving circuit and a testing structure. The antenna structure is disposed on the PCB. The radio frequency signal transceiving circuit is disposed on the PCB, and is connected to the antenna structure through a conductive line. The testing structure includes a testing point and a grounding structure. The testing point is disposed on the conductive line, and the grounding structure is disposed on the PCB.

Abstract: An apparatus for enabling a passive optical network (PON) having an OLT and at least one ONU on supporting time synchronization is disclosed. The apparatus comprises a timestamp correction module configured to make at least one network delay between the OLT and the at least one ONU of the PON equivalent to an equivalent path delay, wherein the timestamp correction module, through the PON, makes the at least one ONU responsible for modifying the timestamp in at least one PTP packet from the OLT, so that a slave clock at the backend of the at least one ONU is equivalent to synchronizing with a virtual master clock. The disclosure computes and corrects PTP commands so that the PTP clock at an ONU's backend may synchronize precisely with the master clock at an OLT's front end.

Abstract: A nailing machine 10 includes a machine housing (1) having a gun nozzle (11), a first end (12) formed adjacent to the gun nozzle (11) and a second end (13) away from the gun nozzle (11); a nail track (2) having a third end (21); and a guiding shaft (3) having a fourth end (31) and a fifth end (32); wherein the third end (21) of the nail track (2) and the fourth end (31) of the guiding shaft (3) are connected to the first end (12) of the machine housing (1) with a fixed mechanism (4); the fifth end (32) of the guiding shaft (3) and the second end (13) of the machine housing (1) are connected to the machine housing (1) with a slidable mechanism (5). Therefore, the interferences caused by the jamming of the screwdriver trapped by the nail belt can be prevented.

Abstract: Provided is a method for preparing a material on an insulator based on enhanced adsorption. In the method: first, a single crystal film having a doped superlattice structure, an intermediate layer, a buffer layer and a top layer film are epitaxially grown in succession on a first substrate; then, low dosage ion implantation is performed on the structure on which the top layer film is formed, so that ions are implanted above an upper surface or below a lower surface of the single crystal film having a doped superlattice structure; next, a second substrate having an insulation layer is bonded to the structure on which ion implantation has already been performed, and an annealing treatment is performed, so that a microscopic crack is produced at the single crystal film having a doped superlattice structure to achieve atomic-scale stripping. The effective stripping of bonding wafers is achieved by means of enhanced adsorption.

Abstract: A phase-shift dimming circuit for LED controller having a delay signal generator configured to receive a PWM input signal, and to provide a plurality of pairs of set signal and reset signal, the set signal and the reset signal respectively having pulses; and a plurality of latches configured to respectively receive the plurality of pairs of set signal and reset signal to generate a plurality of PMW output signals, each of the PWM output signals having pulses, and wherein the rising edge of the pulses of the PWM output signals is based on the corresponding set signal pulses, and the falling edge of the pulses of the PWM output signals is based on the corresponding reset signal pulses.

Abstract: A level transducer has a power supply module, a tuning fork module, a sensing-phase corrector and a controller. The tuning fork module has a tuning fork, at least one piezoelectric driving element, and at least one piezoelectric sensing element. The at least one piezoelectric driving element and the at least one piezoelectric sensing element are stacked on each other, and are mounted on the tuning fork. The power supply module is electrically connected and outputs a voltage to the at least one piezoelectric driving element to deform the at least one piezoelectric driving element. The at least one piezoelectric sensing element is extruded and outputs a voltage signal. The sensing-phase corrector obtains the voltage signal and outputs a clock signal to feedback control the voltage on the at least one piezoelectric driving element to optimize a deformation frequency of each piezoelectric element.

Abstract: A manufacturing method of a sensor device integrated with ultrasonic transducer and microphone is to form a first support structure, a back plate, a second support structure, a membrane and electrodes on a substrate. The substrate is divided into a first region and a second region. The first electrode, the third electrode, a part of the back plate, a part of the second support structure and a part of the membrane that are above the first region form the ultrasonic transducer. The first support structure, the second electrode, the fourth electrode, a part of the back plate, a part of the second support structure and a part of the membrane that are above the second region form the microphone. The ultrasonic transducer and the microphone are simultaneously manufactured.

Abstract: The present invention provides a method for preparing an ultra-thin material on insulator through adsorption by a doped ultra-thin layer. In the method, first, an ultra-thin doped single crystal film and an ultra-thin top film (or contains a buffer layer) are successively and epitaxially grown on a first substrate, and then a high-quality ultra-thin material on insulator is prepared through ion implantation and a bonding process. A thickness of the prepared ultra-thin material on insulator ranges from 5 nm to 50 nm. In the present invention, the ultra-thin doped single crystal film adsorbs the implanted ion, and a micro crack is then formed, so as to implement ion-cut; therefore, the roughness of a surface of a ion-cut material on insulator is small.

Abstract: A management system of wireless power transmission comprises a plurality of first power modules, wherein the first power modules form a first cluster. Each of the first power modules comprises a first power unit, an energy information unit, a first wireless transceiver unit and a first control unit. The energy information unit is coupled to the first power unit. The first wireless transceiver unit is used for sending or receiving the first power transmission information and electrical energy. The first control unit is coupled to the energy information unit and the first wireless transceiver unit, and controls the first wireless transceiver unit to send or receive power transmission information and electrical energy. The first wireless transceiver units send the first power transmission information to each other. The first power modules determine the priority according to a control signal.

Abstract: An inductive touch pen structure applied in an electronic product with a screen includes a main body having an upper casing and a lower casing coupled with each other, a touch head selectively installed at an end of the upper casing or the lower casing of the main body and at least one near field communication (NFC) module being a thin plate installed on the main body. With the structure, the main body with the NFC module can use a high-frequency wireless communication technology to open a built-in application program by a non-contact method.

Abstract: A level transducer has a power supply module, a tuning fork module, a sensing-phase corrector and a controller. The tuning fork module has a tuning fork, at least one piezoelectric driving element, and at least one piezoelectric sensing element. The at least one piezoelectric driving element and the at least one piezoelectric sensing element are stacked on each other, and are mounted on the tuning fork. The power supply module is electrically connected and outputs a voltage to the at least one piezoelectric driving element to deform the at least one piezoelectric driving element. The at least one piezoelectric sensing element is extruded and outputs a voltage signal. The sensing-phase corrector obtains the voltage signal and outputs a clock signal to feedback control the voltage on the at least one piezoelectric driving element to optimize a deformation frequency of each piezoelectric element.

Abstract: The present invention discloses an analog switching circuit having a first terminal receiving an input signal, a second terminal providing an output signal and a control terminal receiving a switching control signal. The analog switching circuit has a first logic circuit providing a first control signal and a second control signal based on the switching control signal; an NMOS and a PMOS coupled between the first terminal and the second terminal, and controlled by the first control signal and the second control signal respectively; a first control circuit controls the backgate voltage of the NMOS based on the input signal and the switching control signal; and a second control circuit controls the backgate voltage of the PMOS based on the input signal and the switching control signal.

Abstract: A run-flat tire, comprising a rim, a tire skin, and one or more elastomers, wherein the elastomer(s) is installed in a holding space within the tire skin, wherein the number of elastomers depending on the inner diameter of the tire skin and the inner width; while the external dimension and shape of the elastomer depends on the inner width of the tire skin and the tire width and shape of the tire skin, wherein the diameter of the elastomer shall be close to or no more than the inner diameter top of the tire skin and the inner diameter bottom of rim center.

Abstract: An optical sensing device includes a plurality of scanning lines having a plurality of first scanning lines and a plurality of second scanning lines, a plurality of sensing lines, a plurality of reading lines, and a plurality of optical sensing modules electrically connected to the scanning lines. Each optical sensing module includes a first optical sensing unit and a second optical sensing unit, each of which includes a sensing unit, a charge storage unit, and a reading unit. The optical sensing module further includes a plurality of differential amplifiers electrically connected to the corresponding reading lines, for determining the difference between the reading lines, wherein the difference indicates the ambient light variation. A first transistor of the sensing unit of the first optical sensing unit is different to a first transistor of the sensing unit of the second sensing unit in channel width.

Abstract: A method for supporting a semiconductor wafer includes providing a device wafer to a magnetizable ring, providing a magnetizable carrier to the device wafer, and magnetizing the magnetizable ring and the magnetizable carrier to form a magnetized clamp having a magnetized ring and magnetized carrier. The magnetized clamp securely clamps the device wafer therebetween.