Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T?(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: Disclosed is a three-dimensional (3D) mesh compression apparatus and method. The 3D mesh compression apparatus may generate a base mesh through a mesh simplification, may separately compress the base mesh and vertices eliminated by the simplification, and may compress 3D mesh data based on the covariance matrix.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: A liquid crystal display including: a first insulating substrate; a plurality of color filters disposed on the first insulating substrate; a light blocking member disposed on the color filters; a second insulating substrate facing the first insulating substrate; and a spacer disposed between the first insulating substrate and the second insulating substrate. The spacer includes a main column spacer and a sub-column spacer spaced apart from each other by a predetermined distance, a protrusion protruding toward the second insulating substrate by stacking at least one sub-color filter on the color filter, the main column spacer is disposed on the protrusion, and the light blocking member and the spacer are made of the same material.

Abstract: Provided is a liquid crystal display, including a first substrate including a plurality of pixel regions including a transmissive light area and a non-transmissive light area, a second substrate facing the first substrate and a liquid crystal layer disposed between the first substrate and the second substrate, wherein the pixel regions includes color filters disposed on a base substrate, a pixel electrode disposed on each of the color filters at the transmissive light area and a black column spacer at a region except a region corresponding to the transsmissive light area, wherein the each of the color filters has substantially rectangular shape with a long side and a short side, and wherein the long side has a recess portion in which a part of a long side corresponding to the non-transmissive light area is removed.

Abstract: Provided is a deposition apparatus including a connection channel connecting a gas inflow channel and a gas outflow channel so as to increase cleaning efficiency by providing a portion of cleaning gas to the dead space of the gas inflow channel and controlling a flow of a cleaning gas.

Abstract: An apparatus for recognizing a driving lane of a vehicle includes a first lane attribute information extractor configured to extract front lane attribute information from a front image of the vehicle. A second lane attribute information extractor is configured to extract current position lane attribute information depending on a current position and a progress direction of the vehicle. A driving lane determiner is configured to determine a current driving lane of the vehicle depending on the front lane attribute information and the current position lane attribute information.

Abstract: An apparatus and method for controlling a speed in an excess speed enforcement section are provided. The method includes determining one of a target speed, a lower limit speed, and a speed limit as a final target speed using a relationship between a target speed, a lower limit speed, and a speed limit. A required acceleration is calculated based on the final target speed and the vehicle speed and the vehicle speed is adjusted using the required acceleration.

Abstract: A scalable three-dimensional (3D) mesh encoding method includes dividing the 3D mesh into layers of complexity into a plurality of graduated levels and generating vertex position information and connectivity information of each of the plurality of levels. The vertex position information about the 3D mesh is encoded based on a weighting in each bit plane and vertex position information having a higher weighting in each bit plane is first encoded.

Abstract: A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

Abstract: An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.

Abstract: Provided is an apparatus for measuring a distance change, the apparatus including an information acquisition unit, an object determination unit, a feature point determination unit, an optical flow calculator, a matching point determination unit, an object length change calculator that calculates a length change ratio between an object of a first frame image and an object of a second frame image by using a feature point and a matching point, and a distance change calculator that calculates a change from a distance between a camera and the object from when the camera acquires the first frame image and when the camera acquires the second frame image using the calculated length change ratio.

Abstract: An apparatus and method for controlling a speed in an excess speed enforcement section are provided. The method includes determining one of a target speed, a lower limit speed, and a speed limit as a final target speed using a relationship between a target speed, a lower limit speed, and a speed limit. A required acceleration is calculated based on the final target speed and the vehicle speed and the vehicle speed is adjusted using the required acceleration.

Abstract: The present invention relates to a method and apparatus for transaction securities. According to the present invention, a disposal restriction on securities can be set or canceled by setting up a security right or creating other contracts according to an enterprise declaration of will. Also, according to the present invention, securities liquidity and stability can be increased by enabling an owner of securities to dispose of the securities having a disposal restriction set through a sell restriction management agreement, as well as by imposing certain restrictions on disposal.