Abstract: Disclosed is a method and apparatus for producing a microchannel plate (MCP) using a corrugated mold, characterized in that each of corrugated substrates formed by the corrugated mold is coated with a secondary emitter and then layered, thereby easily producing a large area of the MCP and decreasing production costs of the MCP. The MCP producing method includes placing a first flat substrate on the corrugated mold, vacuum forming the first flat substrate so that both surfaces thereof are corrugated, coating a secondary emitter onto both surfaces of each of the first corrugated substrate and a second flat substrate, and alternately layering a plurality of the first corrugated substrates and a plurality of the second substrates each coated with the secondary emitter, to form microchannels.

Abstract: The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2˜20 weight % of water-soluble hydroxylamine, 5˜15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30˜55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride.

Abstract: An electro-luminescence display device and a driving method thereof for assuring a high aperture ratio are disclosed. In the device, a plurality of pixel cells is arranged in a matrix type. A plurality of data electrodes applies video signals to the pixel cells. A plurality of gate lines are connected to the pixel cells positioned adjacently to each other at the upper/lower sides thereof in such a manner to cross the data electrodes.

Abstract: A robot arm has an impact absorption structure for absorbing impact energy caused by a collision to protect a person from injury and the robot arm from being damaged. The robot arm includes a plurality of rigid beams provided at both end portions thereof to define a frame of the robot arm, and side members made of an elastic material and provided between the plurality of rigid beams to define an appearance of the robot arm and absorb the impact energy. Each side member includes a sheet made of a plastic material, a foam or honeycomb structure, and a fiber reinforced composite material attached to the sheet.

Abstract: The present invention relates to a resist stripper composition that is used to remove resists during semiconductor device manufacturing processes such as for large size integrated circuits, very large size integrated circuits, etc. The resist stripper composition comprises 3 to 10 wt % of an organic amine compound, 30 to 60 wt % of a solvent selected from a group consisting of DCMAc, DMF, DMI, NMP, etc., 30 to 60 wt % of water, 1 to 10 wt % of catechol, resorcin or a mixture thereof and 1 to 10 wt % of a C4-6 straight polyhydric alcohol.

Abstract: The present invention relates to a nonaqueous stripper composition for negative chemically amplified resists which shows excellent removing capabilities, has anticorrosive effects on varieties of metallic substrate plates such as Al, W, TiN, WSi, SiON, SiNx, HTO, etc., improves productivity since it can be recycled as a nonaqueous stripper even after many applications, and is suitable in electronic material fields in which high precision processing is required in the negative chemically amplified resist removing process. The present invention provides a stripper composition for negative chemically amplified resists comprising a) 20 to 35 weight % of straight chained alkylbenzenesulfonic acid; b) 10 to 34 weight % of light aromatic naphtha solvent; c) 30 to 45 weight % of organic compounds containing chlorine; d) 15 to 25 weight % of hydroxybenzenes; and e) 0.5 to 5 weight % of polyoxyethylene octylphenylether derivatives, in order to accomplish the above objects.

Abstract: The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2-20 weight % of water-soluble hydroxylamine, 5-15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30-55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: A photoresist remover composition including: 10 to 30% by weight amine compound; 20 to 60% by weight glycol series solvent; 20 to 60% by weight polar solvent; and 0.01 to 3% by weight perfluoroalkylethyleneoxide. The performance of the photoresist remover composition in stripping the photoresist residue, which is generated by dry or wet etching, ashing or ion implantation, from a substrate is enhance, and the photoresist remover composition is able to be smoothly applied over a variety of metal layers including an aluminum (Al) layer. Also, the photoresist remover composition corrodes the metal layers very little.

Abstract: The present invention relates to a resist stripper composition that is used to remove resists during semiconductor device manufacturing processes such as for large size integrated circuits, very large size integrated circuits, etc. The resist stripper composition comprises 3 to 10 wt % of an organic amine compound, 30 to 60 wt % of a solvent selected from a group consisting of DCMAc, DMF, DMI, NMP, etc., 30 to 60 wt % of water, 1 to 10 wt % of catechol, resorcin or a mixture thereof and 1 to 10 wt % of a C4-6 straight polyhydric alcohol.

Abstract: The present invention relates to a thinner composition for removing a spin-on-glass coating and a photoresist which are used in the semiconductor components manufacturing process. The present invention provides a mixed thinner composition which is mixed propylene glycol monoalkyl ether with monooxycarbonic acid ester, alkyl ethanoate, and alkyl lactate in a thinner composition for cleaning and photoresist removal applications in the semiconductor components manufacturing process. A thinner composition according to the present invention has the beneficial effects that the production yield can be improved during semiconductor component manufacturing since when the thinner composition is applied after the spin coating process, the undesired coating of the edge or the backside of the substrate can be removed promptly, completely, and effectively, and residual materials adhering to the surface of a substrate which must be reuse can be completely removed so that the substrate can be economically used.

Abstract: A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10.about.40 wt % of water-soluble amine compound; 20.about.50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10.about.30 wt % of water; 0.1.about.10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1.about.10 wt % of triazole compound; and 0.01.about.1 wt % of silicone surfactant.

Abstract: An ozone asher includes: a chamber having a closed space isolated from an atmosphere, and an opening through which the semiconductor substrate to be etched is inserted and withdrawn from the chamber; an upper cover forming an upper portion of the chamber, having ozone injection holes for supplying ozone into the chamber; a plurality of holders for holding the semiconductor substrate inserted in the chamber through the opening; a pedestal provided to be raised and lowered in the chamber and supporting the semiconductor substrate during the whole procedure; vacuum means provided at the pedestal for drawing and holding the semiconductor substrate to the pedestal; heating means for the semiconductor substrate provided at the pedestal; means for raising and lowering the pedestal and the heating means; means for keeping a gap between the pedestal and the upper cover during the elevating of the semiconductor substrate; and a slit door for opening and closing the opening of the chamber selectively.