Abstract: A dynamoelectric machine main body, power circuit modules and a field circuit module, and a control apparatus that has a heatsink that is prepared by die casting, and that is mounted integrally onto the dynamoelectric machine main body are included, the heatsink including a plurality of convex heat receiving portions that are disposed so as to project from a front surface of a base plate, and that have heat receiving surfaces, the power circuit modules and the field circuit module including seal main body portions that are constituted by an electrically insulating resin that seal switching elements so as to expose bottom surfaces of element heat radiating portions on reference surfaces that have a surface shape that corresponds to a shape of the heat receiving surfaces, and electrical insulation supporting layers being interposed between the bottom surfaces of the heat receiving surfaces and the element heat radiating portions.

Abstract: A dynamoelectric machine main body that includes: a housing that is constituted by a rear bracket and a front bracket; a rotor; a stator; and a fan, and a power supply unit that is mounted integrally onto the dynamoelectric machine main body are included, the power supply unit is disposed between the fan and a bottom portion of the rear bracket, and the power supply unit is disposed between the fan and a bottom portion of the rear bracket, and the rear bracket has: air discharge ports that are formed on portions that are positioned radially outside the fan; and air suction ports that have openings nearer to a bottom portion than the power supply unit, and includes a partitioning member for configuring a ventilation channel that extends from the air suction ports to the air discharge ports that is disposed between the power supply unit and the fan.

Abstract: A dynamoelectric machine main body, power circuit modules and a field circuit module, and a control apparatus that has a heatsink that is prepared by die casting, and that is mounted integrally onto the dynamoelectric machine main body are included, the heatsink including a plurality of convex heat receiving portions that are disposed so as to project from a front surface of a base plate, and that have heat receiving surfaces, the power circuit modules and the field circuit module including seal main body portions that are constituted by an electrically insulating resin that seal switching elements so as to expose bottom surfaces of element heat radiating portions on reference surfaces that have a surface shape that corresponds to a shape of the heat receiving surfaces, and electrical insulation supporting layers being interposed between the bottom surfaces of the heat receiving surfaces and the element heat radiating portions.

Abstract: The semiconductor device, including an electrode formed on the surface of a semiconductor element; and a metallic ribbon connected to the electrode. The metallic ribbon has a depressed portion on a surface contacting to the electrode, and the metallic ribbon is connected to the electrode in such a state that the metallic ribbon is deformed toward the inside of the depressed portion.

Abstract: The semiconductor device, including an electrode formed on the surface of a semiconductor element; and a metallic ribbon connected to the electrode. The metallic ribbon has a depressed portion on a surface contacting to the electrode, and the metallic ribbon is connected to the electrode in such a state that the metallic ribbon is deformed toward the inside of the depressed portion.

Abstract: A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability.

Abstract: An insulating sheet consisting of a metal layer and an unhardened insulating resin layer is formed. The insulating resin layer contains a filler having grains of, e.g., scale-like shape and has thixotropy, and its outer size is larger than that of a bottom surface of a metal plate. The insulating sheet is disposed on a bottom surface of a cavity of a mold die and the metal plate is disposed on an upper surface of the insulating resin layer. On a main surface of the metal plate, a power semiconductor chip connected to a frame and another frame through a wire is mounted. The cavity is fully filled with a liquid mold resin in this state. After that, the insulating resin layer is hardened at the same timing as the hardening of the mold resin, and the insulating resin and the metal plate are fixed to each other. An interface between the insulating resin layer and the metal plate is included in the upper surface of the insulating resin layer.

Abstract: In a power module (111), a free-wheeling diode (1A), an IGBT (1B), and a capacitor (20) for smoothing direct current are disposed directly on a surface (2BS) of a conductive heat sink (2B) with through holes (2BH). The rear electrodes of the free wheeling diode (1A), the IGBT (1B), and the capacitor (20) are bonded to the heat sink (2B) for example with solder, whereby the diode (1A), the IGBT (1B), and the capacitor (20) are electrically connected with the heat sink (2B). The front electrodes of the diode (1A), the IGBT (1B), and the capacitor (20) are connected with each other for example by wires (7). In the heat sink (2B), a cooling medium flows through the through holes (2BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

Abstract: A main lead (2) is a single body comprised of an inner lead (2a) and an outer lead (2b) which are integrally formed, the bonding wires are arranged in parallel and fixed onto the inner lead (2a) by the wire bonding portions (3b), and the outer lead are exposed from the mold resin to the outside for electrical connection, and a plurality of through holes (8) penetrating the main terminal lead are formed in the outer vicinity of the wire bonding portions (3b) within the inner lead (2a), and the through holes are arranged substantially in parallel to the arrangement direction of the wire bonding portions (3b) so as to correspond to the entire wire bonding portions (3b).

Abstract: A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing (14) is used for integrally covering the lead frame (6, 7, 13), semiconductor device (1), and metal block (15) serving as a substrate mounting the semiconductor device (1). The mold resin surrounding the lead frame (6) and semiconductor device (1) strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame (6).

Abstract: A power module incorporates a switching semiconductor element and a smoothing capacitor and includes a metallic base plate dissipating heat produced by the switching semiconductor element and the smoothing capacitor. The metallic base plate is thermally separated into a first region adjacent to the switching semiconductor element and a second region adjacent to the smoothing capacitor.

Abstract: A small-sized, light-weight, low-cost power semiconductor device with excellent productivity and vibration resistance is obtained. A mold resin casing (1) is made of a thermosetting resin, such as epoxy resin, and has a top surface (1T) and a bottom surface (1B). A through hole (2) is formed in a non-peripheral portion (in this example, approximately in the center) of the mold resin casing (1) to pass through between the top surface (1T) and the bottom surface (1B). Electrodes (3N, 3P, 4a, 4b) have their first ends projected from sides of the mold resin casing (1). The bottom surface (5B) of a heat spreader (5) is exposed in the bottom surface (1B) of the mold resin casing (1). The heat spreader (5) has an opening (6) formed around the through hole (2).

Abstract: A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

Abstract: A semiconductor device with a package fixed to a case, comprising: a package where a semiconductor element and a lead terminal connected to the semiconductor element are sealed up; and a case formed by a frame member and an external terminal disposed to the frame member, characterized in that the package is located inside the frame of the case and the lead terminal is connected with the external terminal.

Abstract: A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability.

Abstract: A main lead (2) is a single body comprised of an inner lead (2a) and an outer lead (2b) which are integrally formed, the bonding wires are arranged in parallel and fixed onto the inner lead (2a) by the wire bonding portions (3b), and the outer lead are exposed from the mold resin to the outside for electrical connection, and a plurality of through holes (8) penetrating the main terminal lead are formed in the outer vicinity of the wire bonding portions (3b) within the inner lead (2a), and the through holes are arranged substantially in parallel to the arrangement direction of the wire bonding portions (3b) so as to correspond to the entire wire bonding portions (3b).

Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Abstract: A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability.

Abstract: A semiconductor device of the invention comprises a semiconductor element provided within a housing, a bonding wire, a sealing resin member covering the semiconductor element and bonding wire, and a sheet member. The sheet member is fixed in the housing and arranged out of contact with the bonding wire, and moreover buried in the sealing resin member. Because the sheet member restrains the sealing resin member from vibrating, the bonding wire is connected with improved reliability. In place of the sheet member, it is possible to use a pillar member fixed on an insulating substrate. The semiconductor device is suitable for use on a mobile body, such as a vehicle, which proceeds with vibrations.

Abstract: A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.