Patents by Inventor Dai Nakajima
Dai Nakajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6753596Abstract: A resin-sealed semiconductor device includes a metallic plate and a semiconductor element soldered thereto. The metallic plate has a semiconductor element mounting region formed on one surface thereof and a plurality of squared recesses defined lengthwise and crosswise in the one surface at approximately regular intervals at locations other than the semiconductor element mounting region.Type: GrantFiled: May 13, 2003Date of Patent: June 22, 2004Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Dai Nakajima, Kiyoshi Ishida, Taketoshi Shikano
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Publication number: 20040108602Abstract: A resin-sealed semiconductor device includes a metallic plate and a semiconductor element soldered thereto. The metallic plate has a semiconductor element mounting region formed on one surface thereof and a plurality of squared recesses defined lengthwise and crosswise in the one surface at approximately regular intervals at locations other than the semiconductor element mounting region.Type: ApplicationFiled: May 13, 2003Publication date: June 10, 2004Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Dai Nakajima, Kiyoshi Ishida, Taketoshi Shikano
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Publication number: 20040089928Abstract: An insulating sheet consisting of a metal layer and an unhardened insulating resin layer is formed. The insulating resin layer contains a filler having grains of, e.g., scale-like shape and has thixotropy, and its outer size is larger than that of a bottom surface of a metal plate. The insulating sheet is disposed on a bottom surface of a cavity of a mold die and the metal plate is disposed on an upper surface of the insulating resin layer. On a main surface of the metal plate, a power semiconductor chip connected to a frame and another frame through a wire is mounted. The cavity is fully filled with a liquid mold resin in this state. After that, the insulating resin layer is hardened at the same timing as the hardening of the mold resin, and the insulating resin and the metal plate are fixed to each other. An interface between the insulating resin layer and the metal plate is included in the upper surface of the insulating resin layer.Type: ApplicationFiled: April 15, 2003Publication date: May 13, 2004Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Dai Nakajima, Kazuhiro Tada, Taketoshi Shikano, Yasunari Hino
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Publication number: 20040089931Abstract: A small-sized, light-weight, low-cost power semiconductor device with excellent productivity and vibration resistance is obtained. A mold resin casing (1) is made of a thermosetting resin, such as epoxy resin, and has a top surface (1T) and a bottom surface (1B). A through hole (2) is formed in a non-peripheral portion (in this example, approximately in the center) of the mold resin casing (1) to pass through between the top surface (1T) and the bottom surface (1B). Electrodes (3N, 3P, 4a, 4b) have their first ends projected from sides of the mold resin casing (1). The bottom surface (5B) of a heat spreader (5) is exposed in the bottom surface (1B) of the mold resin casing (1). The heat spreader (5) has an opening (6) formed around the through hole (2).Type: ApplicationFiled: March 18, 2003Publication date: May 13, 2004Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Dai Nakajima, Taishi Sasaki, Toru Kimura
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Patent number: 6700194Abstract: A semiconductor device which satisfies both the requirements for radiation performance and for miniaturization while having a semiconductor element for a heavy current. The semiconductor device has an IGBT element (1) and diode element (2) which are provided on the main surface of the heat spreader (25) in a strip form formed of a metal with excellent heat conductivity and electricity conductivity. In addition, a relay terminal block (20) is provided outside of the IGBT element (1) on the main surface of the heat spreader (25) and the relay terminal block (20), the IGBT element (1) and the diode element (2) are aligned. Then, the external connection electrode plates (81) and (82) are, respectively, provided on both sides of this alignment.Type: GrantFiled: March 29, 2002Date of Patent: March 2, 2004Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Dai Nakajima, Hideaki Chuma
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Publication number: 20030213979Abstract: A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing (14) is used for integrally covering the lead frame (6, 7, 13), semiconductor device (1), and metal block (15) serving as a substrate mounting the semiconductor device (1). The mold resin surrounding the lead frame (6) and semiconductor device (1) strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame (6).Type: ApplicationFiled: March 10, 2003Publication date: November 20, 2003Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Dai Nakajima, Yoshihiro Kashiba, Hideaki Chuma
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Publication number: 20030197255Abstract: A semiconductor device with a package fixed to a case, comprising: a package where a semiconductor element and a lead terminal connected to the semiconductor element are sealed up; and a case formed by a frame member and an external terminal disposed to the frame member, characterized in that the package is located inside the frame of the case and the lead terminal is connected with the external terminal.Type: ApplicationFiled: September 20, 2002Publication date: October 23, 2003Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Dai Nakajima, Yoshihiro Kashiba, Hideaki Chuma
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Patent number: 6580147Abstract: P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.Type: GrantFiled: March 14, 2001Date of Patent: June 17, 2003Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Toru Kimura, Dai Nakajima, Tatsuya Okuda, Takeshi Ohi, Takanobu Yoshida, Naoki Yoshimatsu, Yuuji Kuramoto, Toshinori Yamane, Masakazu Fukada, Majumdar Gourab
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Publication number: 20030063442Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.Type: ApplicationFiled: December 10, 2002Publication date: April 3, 2003Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Nobuyoshi Kimoto, Takanobu Yoshida, Naoki Yoshimatsu, Masuo Koga, Dai Nakajima, Gourab Majumdar, Masakazu Fukada
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Patent number: 6522544Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.Type: GrantFiled: October 17, 2000Date of Patent: February 18, 2003Assignees: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering CorporationInventors: Nobuyoshi Kimoto, Takanobu Yoshida, Naoki Yoshimatsu, Masuo Koga, Dai Nakajima, Gourab Majumdar, Masakazu Fukada
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Publication number: 20030011057Abstract: A semiconductor device of the invention comprises a semiconductor element provided within a housing, a bonding wire, a sealing resin member covering the semiconductor element and bonding wire, and a sheet member. The sheet member is fixed in the housing and arranged out of contact with the bonding wire, and moreover buried in the sealing resin member. Because the sheet member restrains the sealing resin member from vibrating, the bonding wire is connected with improved reliability. In place of the sheet member, it is possible to use a pillar member fixed on an insulating substrate. The semiconductor device is suitable for use on a mobile body, such as a vehicle, which proceeds with vibrations.Type: ApplicationFiled: August 19, 2002Publication date: January 16, 2003Inventors: Dai Nakajima, Naoki Yoshimatsu, Haruyuki Matsuo, Ryuuichi Ishii
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Patent number: 6501172Abstract: In a powder module (111), a free-wheeling diode (1A), an IGBH (1B), and a capacitor (20) for smoothing direct current are disposed directly on a surface (2BS) of a conductive heat sink (2B) with through holes (2BH). The rear electrodes of the free-wheeling diode (1A), the IGBT (1B), and the capacitor (20) are bonded to the heat sink (2B) for example with solder, whereby the diode (1A), the IGBT (1B), and the capacitor (20) are electrically connected with the heat sink (2B). The front electrodes of the diodes (1A), the IGBT (1B), and the capacitor (20) are connected with each other for example by wires (7). In the heat sink (2B), a cooling medium flows through the through holes (2BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.Type: GrantFiled: September 28, 2000Date of Patent: December 31, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Masakazu Fukada, Dai Nakajima, Ken Takanashi
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Publication number: 20020190374Abstract: A semiconductor device which satisfies both the requirements for radiation performance and for miniaturization while having a semiconductor element for a heavy current. The semiconductor device has an IGBT element (1) and diode element (2) which are provided on the main surface of the heat spreader (25) in a strip form formed of a metal with excellent heat conductivity and electricity conductivity. In addition, a relay terminal block (20) is provided outside of the IGBT element (1) on the main surface of the heat spreader (25) and the relay terminal block (20), the IGBT element (1) and the diode element (2) are aligned. Then, the external connection electrode plates (81) and (82) are, respectively, provided on both sides of this alignment.Type: ApplicationFiled: March 29, 2002Publication date: December 19, 2002Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Dai Nakajima, Hideaki Chuma
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Publication number: 20020186545Abstract: In a power module (111), a free-wheeling diode (1A), an IGBT (1B), and a capacitor (20) for smoothing direct current are disposed directly on a surface (2BS) of a conductive heat sink (2B) with through holes (2BH). The rear electrodes of the freewheeling diode (1A), the IGBT (1B), and the capacitor (20) are bonded to the heat sink (2B) for example with solder, whereby the diode (1A), the IGBT (1B), and the capacitor (20) are electrically connected with the heat sink (2B). The front electrodes of the diode (1A), the IGBT (1B), and the capacitor (20) are connected with each other for example by wires (7). In the heat sink (2B), a cooling medium flows through the through holes (2BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.Type: ApplicationFiled: August 13, 2002Publication date: December 12, 2002Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Masakazu Fukada, Dai Nakajima, Ken Takanashi
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Publication number: 20020158329Abstract: A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability.Type: ApplicationFiled: April 3, 2002Publication date: October 31, 2002Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Tohru Kimura, Dai Nakajima, Yuuji Kuramoto
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Publication number: 20010035562Abstract: P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.Type: ApplicationFiled: March 14, 2001Publication date: November 1, 2001Inventors: Toru Kimura, Dai Nakajima, Tatsuya Okuda, Takeshi Ohi, Takanobu Yoshida, Naoki Yoshimatsu, Yuuji Kuramoto, Toshinori Yamane, Masakazu Fukada, Majumdar Gourab
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Patent number: 6304448Abstract: Obtained is a power module which is excellent in electromagnetic shielding effects, is rarely influenced by external noises and acts as an external noise source with difficulty. An insulating substrate (5) is bonded through a solder (4) to a top surface of a heat sink (3) fixed to a support plate (2). A DC capacitor (16) is fixed to a bottom face of the heat sink (3) by adhesion. A control substrate (11) having a control IC (13) mounted thereon is fixed to the support plate (2). Moreover, a plurality of electrodes (10), a DC side electrode and refrigerant inlet-outlet (9) and a control connector (15) are provided on the support plate (2). A case (1) is fixed to a peripheral portion of the support plate (2), and surrounds the insulating substrate (5), the control substrate (11), the heat sink (3) and the DC capacitor 16 together with the support plate (2). Both the case (1) and the support plate (2) have conducting property.Type: GrantFiled: September 7, 2000Date of Patent: October 16, 2001Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Masakazu Fukada, Dai Nakajima, Ken Takanashi