Abstract: According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the tunnel barrier. The tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO.

Abstract: According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the tunnel barrier. The tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO.

Abstract: According to one embodiment, a magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.

Abstract: According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on the first insulating film and including nonmagnetic elements, the second MMF having axis of EMP, second intermediate magnetic film between the first insulating film and the second MMF, and diffusion preventing film including metal nitride having barrier property against diffusion of the nonmagnetic elements between the first MMF and the first intermediate magnetic film.

Abstract: In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.

Abstract: According to one embodiment, a magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

Abstract: According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on the first insulating film and including nonmagnetic elements, the second MMF having axis of EMP, second intermediate magnetic film between the first insulating film and the second MMF, and diffusion preventing film including metal nitride having barrier property against diffusion of the nonmagnetic elements between the first MMF and the first intermediate magnetic film.

Abstract: According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on a semiconductor substrate, the first magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; a non-magnetic layer formed on the first magnetic layer; a second magnetic layer formed on the non-magnetic layer, the second magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; and a sidewall film provided so as to cover a sidewall of each of the magneto-resistance elements with a protective film interposed therebetween, the sidewall film providing a tensile stress to the magneto-resistance element along the easy axis of magnetization.

Abstract: According to one embodiment, a magnetoresistive random access memory includes a magnetoresistive element in a memory cell, the magnetoresistive element including a first metal magnetic layer, a second metal magnetic layer, and an insulation layer interposed between the first and second metal magnetic layers. An area of each of the first and second metal magnetic layers is smaller than an area of the insulation layer.

Abstract: According to one embodiment, a semiconductor device, includes a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order; and a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.

Abstract: In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.

Abstract: In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first interfacial magnetic layer on the first magnetic layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second magnetic layer on the second interfacial magnetic layer; and an upper electrode layer on the second magnetic layer. Either the first magnetic and interfacial magnetic layers or the second magnetic and interfacial magnetic layers constitute a storage layer. The other layers of the first magnetic and interfacial magnetic layers and the second magnetic and interfacial magnetic layers constitute a reference layer. The lower electrode includes an alloy layer or mixture layer of a precious metal and a transition element or a rare earth element, or comprises a conductive oxide layer.

Abstract: According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.

Abstract: According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on a semiconductor substrate, the first magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; a non-magnetic layer formed on the first magnetic layer; a second magnetic layer formed on the non-magnetic layer, the second magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; and a sidewall film provided so as to cover a sidewall of each of the magneto-resistance elements with a protective film interposed therebetween, the sidewall film providing a tensile stress to the magneto-resistance element along the easy axis of magnetization.

Abstract: According to one embodiment, a semiconductor device, includes a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order; and a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.