Abstract: A semiconductor laser module includes a laser emission unit including a laser diode element that emits a laser beam, and a first electrode and a second electrode that supply current to the laser diode element; a base member that supports and fixes the laser emission unit; a fast-axis collimator that collimates a fast-axis direction component of the laser beam emitted from the laser diode element; and a slow-axis collimator that collimates a slow-axis direction component of the laser beam emitted from the laser diode element. The base member protrudes in a direction of emission of the laser beam with respect to the laser emission unit. The fast-axis collimator is fixed to the laser emission unit in an optical path of the laser emission unit where the laser beam is emitted. The slow-axis collimator is fixed to the base member in the optical path of the laser beam.

Abstract: The present disclosure provides a system for supporting a movement of a moving body in a predetermined area. The system acquires an image captured by an infrastructure camera such that the image includes a plurality of markers arranged in the predetermined area. The system compares the image acquired this time and the image acquired previous time. The system detects a position change marker among the plurality of markers whose position in the image acquired previous time changes from that in the image acquired this time. The system determines that the infrastructure camera is out of position when it is detected that number of the position change marker is equal to or more than a predetermined number. The system determines that the infrastructure camera is not out of position when it is detected that number of the position change marker is less than the predetermined number.

Abstract: An antenna includes a conductive patch. The patch includes, in a plan view, a first power feed-side edge and a first non-power feed-side edge positioned on opposite sides in a first direction in one-to-one relation, and a second power feed-side edge and a second non-power feed-side edge positioned on opposite sides in a second direction intersecting the first direction in one-to-one relation. The patch includes, in the plan view, a first power feed point positioned on a side nearer to the first power feed-side edge and a second power feed point positioned on a side nearer to the second power feed-side edge. In the plan view, at least a portion of the first power feed-side edge expands outward and forms a protrusion. A width of the protrusion in the second direction gradually decreases toward a top of the protrusion. The first power feed point is positioned nearer to the top of the protrusion than a middle of a hill slope of the protrusion in the first direction.

Abstract: A semiconductor laser module includes a heat sink, a first electrode disposed in a first region of the heat sink, an electrically insulating layer disposed on the first electrode, a submount that is disposed in a second region of the heat sink and is electrically conductive and thermally conductive, a laser diode element that is disposed on the submount and emits a laser beam, a feed structure that is disposed on the laser diode element and is electrically conductive, thermally conductive, and elastic, and a second electrode disposed on and in contact with the electrically insulating layer and the feed structure. The second electrode includes an electrode-facing portion having a flat surface in contact with the electrically insulating layer, and a protruding portion having a flat surface in contact with the feed structure, and protruding toward the heat sink with respect to the electrode-facing portion.

Abstract: A compressor includes a rotor including a plurality of disks, a shaft portion connected on a downstream side of the disks; and rotor blade rows fixed to the plurality of disks; a stator including a compressor casing; and a plurality of stator vane rows each provided between corresponding adjacent ones of the rotor blade rows; an outlet guide vane including blade main bodies disposed at an interval in a circumferential direction on the downstream side of the disk located most downstream, and inner shrouds connecting the blade main bodies in the circumferential direction, on an inner side in a radial direction; and an inner casing disposed on the downstream side of the disk located most downstream with a gap between the disk and the inner casing.

Abstract: A semiconductor laser module includes: a semiconductor laser element that outputs a laser beam; a sub-mount material that is electrically conductive and bonded to a first surface of the semiconductor laser element; an electrode assembly that is electrically conductive and connected to a second surface of the semiconductor laser element; a conductive wire structure including a plurality of linear members interconnecting the electrode assembly and the second surface; an insulating plate bonded to the electrode assembly; and a cooling block bonded to the sub-mount material and the insulating plate for cooling the semiconductor laser element, wherein the conductive wire structure fixed to the electrode assembly is electrically connected to the semiconductor laser element after the semiconductor laser element, the sub-mount material, and the cooling block are fixed together through bonding materials.

Abstract: A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

Abstract: A method of manufacturing a vertical cavity surface emitting laser element including a first reflector including a nitride semiconductor multilayer film, the method includes: growing a first semiconductor layer consisting of a group III semiconductor containing aluminum and indium, the growing of the first semiconductor layer consisting of growing a first layer by supplying an aluminum source gas, an indium source gas, and a nitrogen source gas, and growing a second layer by supplying an aluminum source gas, an indium source gas, and a nitrogen source gas so that an indium composition ratio of the second layer is higher than an indium composition ratio of the first layer; and growing a second semiconductor layer consisting of gallium nitride. The growing of the first semiconductor layer and the growing of the second semiconductor are repeated alternately to form the nitride semiconductor multilayer film constituting the first reflector.

Abstract: By a method including at least a spraying/mixing step of: mixing a precursor compound of a positive electrode active material with a lithium compound to prepare a mixture; and simultaneously spraying a spraying agent containing at least one element onto the mixture, there can be produced a positive electrode active material for non-aqueous electrolyte secondary batteries, which does not adversely affect battery properties of non-aqueous electrolyte secondary batteries, without reducing production efficiency.

Abstract: Process for making a partially coated electrode active material wherein said process comprises the following steps: (a) Providing an electrode active material according to general formula Li1+xTM1-xO2, wherein TM is Ni and, optionally, at least one of Co and Mn, and, optionally, at least one element selected from Al, Mg, and Ba, transition metals other than Ni, Co, and Mn, and x is in the range of from zero to 0.2, wherein at least 50 mole-% of the transition metal of TM is Ni, (b) treating said electrode active material with an aqueous medium, (c) partially removing water by solid-liquid separation method, (d) treating the solid residue with an aqueous formulation of at least one heteropolyacid or its respective ammonium or lithium salt, (e) treating the residue thermally.

Abstract: Provided is a method for preparing genetically-modified T cells expressing chimeric antigen receptor, comprising: (i) a step of preparing non-proliferative cells holding a viral peptide antigen, which are obtained by stimulating a group of cells comprising T cells using an anti-CD3 antibody and an anti-CD28 antibody followed by culturing in the presence of the viral peptide antigen and a treatment for causing the cells to lose their proliferation capability; (ii) a step of obtaining genetically-modified T cells into which a target antigen-specific chimeric antigen receptor gene has been introduced using a transposon method; (iii) a step of mixing the non-proliferative cells prepared by step (i) with the genetically-modified T cells obtained by step (ii), and co-culturing the mixed cells; and (iv) a step of collecting the cells after culture.

Abstract: A semiconductor laser module includes a semiconductor laser element that outputs a laser beam, a cathode that is for causing a current to flow through the semiconductor laser element, and a heat sink that dissipates heat generated in the semiconductor laser element. The heat sink includes an anode, a first insulating layer located at a position farther away from the semiconductor laser element than the anode, and a water passage portion located at a position farther away from the semiconductor laser element than the first insulating layer. The water passage portion is formed by metal and includes a part of a flow path of water for dissipation of heat generated in the semiconductor laser element.

Abstract: In order to improve the efficiency of gene introduction in CAR therapy employing a transposon method, provided is a method for preparing genetically-modified T cells expressing chimeric antigen receptor, comprising: (1) a step of preparing non-proliferative cells which are obtained by stimulating a group of cells comprising T cells using an anti-CD3 antibody and an anti-CD28 antibody followed by a treatment for causing the cells to lose their proliferation capability; (2) a step of obtaining genetically-modified T cells into which a target antigen-specific chimeric antigen receptor gene has been introduced using a transposon method; (3) a step of mixing the non-proliferative cells prepared by step (1) with the genetically-modified T cells obtained by step (2), and co-culturing the mixed cells while stimulating the mixed cells using an anti-CD3 antibody and anti-CD28 antibody; and (4) a step of collecting the cells after culture.

Abstract: Process for making a partially coated electrode active material wherein said process comprises the following steps: (a) Providing an electrode active material according to general formula Li1+xTM1?xO2, wherein TM is Ni and, optionally, at least one of Co and Mn, and, optionally, at least one element selected from Al, Mg, Ba and B, transition metals other than Ni, Co, and Mn, and x is in the range of from zero to 0.2, wherein at least 50 mole-% of the transition metal of TM is Ni, (b) treating said electrode active material with an aqueous medium, (c) partially removing water by solid-liquid separation method, (d) treating the residue with a compound of Me, Me being selected from at least one of aluminum, boron, phosphorus, antimony, magnesium, vanadium, and tellurium, and (e) treating the residue thermally.

Abstract: A compressor includes a rotor including a plurality of disks, a shaft portion connected on a downstream side of the disks; and rotor blade rows fixed to the plurality of disks; a stator including a compressor casing; and a plurality of stator vane rows each provided between corresponding adjacent ones of the rotor blade rows; an outlet guide vane including blade main bodies disposed at an interval in a circumferential direction on the downstream side of the disk located most downstream, and inner shrouds connecting the blade main bodies in the circumferential direction, on an inner side in a radial direction; and an inner casing disposed on the downstream side of the disk located most downstream with a gap between the disk and the inner casing.

Abstract: A heat sink having a coolant flow path formed inside through which a coolant flows includes: a heat transfer plate having a first surface on which a semiconductor device is disposed and a second surface; a junction flow path-forming plate having a third surface and a fourth surface; a first partition wall provided in contact with the second surface and the third surface; and first fins provided in contact with the second surface. The coolant flow path includes a first flow path. A plurality of first divided regions separated by the at least one first partition wall are formed in the first flow path. The plurality of first fins are arranged by being spaced side by side in the first divided regions.

Abstract: A laser device includes: a plurality of laser diodes that emit laser beams having different wavelengths; a partial reflection mirror that resonates the plurality of laser beams emitted by the plurality of laser diodes; and a wavelength dispersion element that causes the plurality of laser beams incident from the plurality of laser diodes in different orientations of optical axes of the laser beams to travel to the mirror with the optical axes aligned. Each of the plurality of laser diodes is integrally formed with an adjustment component that is rotatable around an emission end of the laser diode.

Abstract: A laser device includes: a plurality of laser diodes that emit laser beams having different wavelengths; a partial reflection mirror that resonates the plurality of laser beams emitted by the plurality of laser diodes; and a wavelength dispersion element that causes the plurality of laser beams incident from the plurality of laser diodes in different orientations of optical axes of the laser beams to travel to the mirror with the optical axes aligned. Each of the plurality of laser diodes is integrally formed with an adjustment component that is rotatable around an emission end of the laser diode.

Abstract: A multistage axial compressor includes: a rotational shaft to which a plurality of rotor blades are mounted; a casing surrounding the rotational shaft, the casing forming a flow passage of a working fluid between the rotational shaft and the casing; a wall portion having an annular shape and extending in a circumferential direction of the rotational shaft so as to surround the casing, the wall portion forming an bleed chamber having an annular shape and being in communication with the flow passage; a plurality of port portions connected to an outer peripheral surface of the wall portion, the port portions forming respective outlet flow passages which are in communication with the bleed chamber; and a plurality of bleed pipes connected to the respective port portions.

Abstract: Process for making an at least partially coated electrode active material wherein said process comprises the following steps: (a) Providing an electrode active material according to general formula Li1?xTM1?xO2, wherein TM is Ni and, optionally, at least one of Co and Mn, and, optionally, at least one element selected from Al, Mg, Ba and B, transition metals other than Ni, Co, and Mn, and x is in the range of from zero to 0.2, wherein at least 50 mole-% of the transition metal of TM is Ni, (b) treating said electrode active material with an aqueous formulation containing a compound of Me wherein Me is selected from Sb, Mg, Zn, Sn, and Te, (c) separating off the water, (d) treating the residue thermally.