Abstract: A laser diode includes a ridge portion, channel portions located adjacent to the ridge portion such that the ridge portion is sandwiched, the channel portions being shorter in height than the ridge portion, terrace portions adjacent to opposite sides of the respective channel portions from the ridge portion and longer in height than the channel portions, supporting portions provided over the respective channel portions, separated from side surfaces of the ridge portion or side surfaces of terrace portions or both, and made of resin, a ceiling portion including first portions provided over the supporting portions and second portions continuous with the first portions and located over the respective channel portions with hollow portions interposed therebetween, the ceiling portion being made of resin, and a metal layer provided over the ceiling portion and connected to an upper surface of the ridge portion.

Abstract: Provided is a laser light source device which has a plurality of semiconductor laser elements arranged in an array and is provided with: a heat sink; a sub-mount substrate which is placed on one end edge of the heat sink, which has a power feed path, and on which the semiconductor laser array is mounted; an insulation plate placed in an area other than the sub-mount substrate on the heat sink; a first electrode plate mounted on the insulation plate; a second electrode plate mounted on the insulation plate separately from the first electrode plate; metal wires electrically connecting respectively between the first electrode plate and the sub-mount substrate and between the second electrode plate and the semiconductor laser array; and a cooling block on which the heat sink is mounted and which has a cooling water flow channel inside of the cooling block.

Abstract: A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced from a region directly under the upper electrode, the lower electrode being reflective; and a protective film disposed continuously on a surface of the upper electrode and the upper surface of the semiconductor layered structure. A thickness of a first portion of the protective film, which is disposed at least in a region directly above the lower electrode, is smaller than a thickness of a second portion of the protective film, which is disposed continuously on the surface of the upper electrode and the upper surface of the semiconductor layered structure adjacent to the portion on which the upper electrode is disposed.

Abstract: A semiconductor laser device includes a substrate, a buffer layer provided on an upper surface of the substrate and formed of InP, a laser element having a ridge structure formed above the buffer layer, and an epi intermediate layer formed of a compound semiconductor containing As and exposed to the outside.

Abstract: A laser diode includes a ridge portion, channel portions located adjacent to the ridge portion such that the ridge portion is sandwiched, the channel portions being shorter in height than the ridge portion, terrace portions adjacent to opposite sides of the respective channel portions from the ridge portion and longer in height than the channel portions, supporting portions provided over the respective channel portions, separated from side surfaces of the ridge portion or side surfaces of terrace portions or both, and made of resin, a ceiling portion including first portions provided over the supporting portions and second portions continuous with the first portions and located over the respective channel portions with hollow portions interposed therebetween, the ceiling portion being made of resin, and a metal layer provided over the ceiling portion and connected to an upper surface of the ridge portion.

Abstract: A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced from a region directly under the upper electrode, the lower electrode being reflective; and a protective film disposed continuously on a surface of the upper electrode and the upper surface of the semiconductor layered structure. A thickness of a first portion of the protective film, which is disposed at least in a region directly above the lower electrode, is smaller than a thickness of a second portion of the protective film, which is disposed continuously on the surface of the upper electrode and the upper surface of the semiconductor layered structure adjacent to the portion on which the upper electrode is disposed.

Abstract: A laser diode includes a ridge portion, channel portions located adjacent to the ridge portion such that the ridge portion is sandwiched, the channel portions being shorter in height than the ridge portion, terrace portions adjacent to opposite sides of the respective channel portions from the ridge portion and longer in height than the channel portions, supporting portions provided over the respective channel portions, separated from side surfaces of the ridge portion or side surfaces of terrace portions or both, and made of resin, a ceiling portion including first portions provided over the supporting portions and second portions continuous with the first portions and located over the respective channel portions with hollow portions interposed therebetween, the ceiling portion being made of resin, and a metal layer provided over the ceiling portion and connected to an upper surface of the ridge portion.

Abstract: An optical axis alignment method may include the steps of taking an image of a lens holder and a holder base to obtain contour information before laser irradiation, detecting location information about a light path of a light beam which exits from a collimating lens, adjusting the position of the collimating lens by plastically deforming via laser irradiation, taking an image of a contour of a lens holder and a base member to obtain new contour information and detecting new location information about a light path of a light beam which exits from the collimating lens. If the accuracy is not within the predetermined allowable limits, the laser irradiation condition is corrected based on the contour information and/or the location information obtained both before and after the laser irradiation and the lens position adjustment is repeated.

Abstract: A laser diode includes a ridge portion, channel portions located adjacent to the ridge portion such that the ridge portion is sandwiched, the channel portions being shorter in height than the ridge portion, terrace portions adjacent to opposite sides of the respective channel portions from the ridge portion and longer in height than the channel portions, supporting portions provided over the respective channel portions, separated from side surfaces of the ridge portion or side surfaces of terrace portions or both, and made of resin, a ceiling portion including first portions provided over the supporting portions and second portions continuous with the first portions and located over the respective channel portions with hollow portions interposed therebetween, the ceiling portion being made of resin, and a metal layer provided over the ceiling portion and connected to an upper surface of the ridge portion.

Abstract: A semiconductor device manufacturing system includes: a PL evaluation apparatus that evaluates wavelengths of photoluminescent light produced by individual optical modulators on a single semiconductor wafer; an electron beam drawing apparatus that draws patterns of diffraction gratings of laser sections that adjoin respective optical modulators on the wafer; and a calculation section that receives the wavelengths of the photoluminescent light from the PL evaluation apparatus, calculates densities of respective diffraction gratings so that differences between the wavelengths of the photoluminescent light and oscillating wavelengths of the laser sections become a constant, and sends the densities calculated to the electron beam drawing apparatus for drawing respective diffraction grating patterns on the respective laser sections.

Abstract: A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced from a region directly under the upper electrode, the lower electrode being reflective; and a protective film disposed continuously on a surface of the upper electrode and the upper surface of the semiconductor layered structure. A thickness of a first portion of the protective film, which is disposed at least in a region directly above the lower electrode, is smaller than a thickness of a second portion of the protective film, which is disposed continuously on the surface of the upper electrode and the upper surface of the semiconductor layered structure adjacent to the portion on which the upper electrode is disposed.

Abstract: A light-emitting device includes a semiconductor layered structure; a conductive substrate disposed below the semiconductor layered structure; one or more upper electrodes, each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced apart from regions of the lower surface of the semiconductor layered structure directly under the upper electrodes, the lower electrode being electrically connected between the semiconductor layered structure and the substrate; and one or more conduction prevention portions, each disposed on the lower surface of the semiconductor layered structure in at least a region located between (i) a region directly under a respective one of the one or more upper electrodes and (ii) the region on which the lower electrode is disposed.

Abstract: The purpose of the present invention is to provide a pharmaceutical composition that is useful for the treatment of diseases that are caused by an increase in bone resorption and that does not cause serious side effects even when used in combination with another drug. The present invention relates to: an ?-oxoacyl amino-caprolactam derivative that is represented by formula (I) (in the formula, X is —O— or —N(R1)— and R1 represents an alkoxycarbonyl group having 1-10 carbon atoms); and a bone resorption inhibitor containing the ?-oxoacyl amino-caprolactam derivative.

Abstract: The purpose of the present invention is to provide a pharmaceutical composition that is useful for the treatment of diseases that are caused by an increase in bone resorption and that does not cause serious side effects even when used in combination with another drug. The present invention relates to: an ?-oxoacyl amino-caprolactam that is represented by formula (I) (in formula (I), X represents N or CH, Y represents O or CH2, and Z represents S or CH2); and a bone resorption inhibitor containing the ?-oxoacyl amino-caprolactam.

Abstract: The purpose of the present invention is to provide a pharmaceutical composition that is useful for the treatment of diseases that are caused by an increase in bone resorption and that does not cause serious side effects even when used in combination with another drug. The present invention relates to: an ?-oxoacyl amino-caprolactam derivative that is represented by formula (I) (in the formula, X is —O— or —N(R1)— and R1 represents an alkoxycarbonyl group having 1-10 carbon atoms); and a bone resorption inhibitor containing the ?-oxoacyl amino-caprolactam derivative.

Abstract: An object of the present invention is to provide a positive electrode mixture capable of conducting stable charging and discharging with a less amount of gasses generated which has an operating voltage or an initial crystal phase transition voltage of not less than 4.5 V on the basis of lithium. The present invention relates to a positive electrode mixture comprising carbon black having a bulk density of not more than 0.1 g/cm3, a crystallite size of 10 to 40 ?, an iodine adsorption of 1 to 150 mg/g, a volatile content of not more than 0.1% and a metal impurity content of not more than 20 ppm, and a positive electrode active substance having an operating voltage or an initial crystal phase transition voltage of not less than 4.5 V on the basis of lithium.

Abstract: The purpose of the present invention is to provide a pharmaceutical composition that is useful for the treatment of diseases that are caused by an increase in bone resorption and that does not cause serious side effects even when used in combination with another drug. The present invention relates to: an ?-oxoacyl aminocaprolactam derivative that is represented by formula (I) (in the formula, X is —O— or —N(R1)— and R1 represents an alkoxycarbonyl group having 1-10 carbon atoms); and a bone resorption inhibitor containing the ?-oxoacyl aminocaprolactam derivative.

Abstract: A semiconductor device manufacturing system includes: a PL evaluation apparatus that evaluates wavelengths of photoluminescent light produced by individual optical modulators on a single semiconductor wafer; an electron beam drawing apparatus that draws patterns of diffraction gratings of laser sections that adjoin respective optical modulators on the wafer; and a calculation section that receives the wavelengths of the photoluminescent light from the PL evaluation apparatus, calculates densities of respective diffraction gratings so that differences between the wavelengths of the photoluminescent light and oscillating wavelengths of the laser sections become a constant, and sends the densities calculated to the electron beam drawing apparatus for drawing respective diffraction grating patterns on the respective laser sections.

Abstract: A semiconductor laser device includes a substrate, a buffer layer provided on an upper surface of the substrate and formed of InP, a laser element having a ridge structure formed above the buffer layer, and an epi intermediate layer formed of a compound semiconductor containing As and exposed to the outside.

Abstract: A method for manufacturing a semiconductor device includes forming a lower light confinement layer on a substrate, a light absorption layer on the lower light confinement layer, and an upper light confinement layer on the light absorption layer; and removing parts of these layers to form an optical modulator, forming a laser section having a diffraction grating in a portion of the substrate where the optical modulator is not present, forming a diffusion constraining layer, which constrains diffusion of a dopant, on the upper light confinement layer, and forming a contact layer on the laser section and the diffusion constraining layer. The same dopant is present in the contact layer and the upper light confinement layer.