Abstract: To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of Inx1Ga1−x1N (x1>0) containing In and a first barrier layer made of Aly2Ga1−y2N (y2>0) containing Al formed on the well layer.

Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.

Abstract: The present invention relates to the client machine and the server machine and the like which are connected to the communication line, and answers are accurately given to a question of a user of the client machine according to a level of that question. First, the solution of the answer is attempted inside the client machine (primary answer section 61) and, if not solved, an enquiry is made to the server machine (secondary answer request section 63) and, if not yet solved, a mail is transmitted to a support window (e-mail soft 66).

Abstract: To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of Inx1Ga1−x1N (x1>0) containing In and a first barrier layer made of Aly2Ga1−y2N (y2>0) containing Al formed on the well layer.