Patents by Inventor Daisuke Morita

Daisuke Morita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160137691
    Abstract: The purpose of the present invention is to provide a pharmaceutical composition that is useful for the treatment of diseases that are caused by an increase in bone resorption and that does not cause serious side effects even when used in combination with another drug. The present invention relates to: an ?-oxoacyl aminocaprolactam derivative that is represented by formula (I) (in the formula, X is —O— or —N(R1)— and R1 represents an alkoxycarbonyl group having 1-10 carbon atoms); and a bone resorption inhibitor containing the ?-oxoacyl aminocaprolactam derivative.
    Type: Application
    Filed: June 13, 2014
    Publication date: May 19, 2016
    Inventors: Nobuo Kobayashi, Tsuneo Koji, Hisatomo Kunii, Mizuho Ishikawa, Daisuke Morita
  • Publication number: 20160130266
    Abstract: The purpose of the present invention is to provide a pharmaceutical composition that is useful for the treatment of diseases that are caused by an increase in bone resorption and that does not cause serious side effects even when used in combination with another drug. The present invention relates to: an ?-oxoacyl amino-caprolactam that is represented by formula (I) (in formula (I), X represents N or CH, Y represents O or CH2, and Z represents S or CH2); and a bone resorption inhibitor containing the ?-oxoacyl amino-caprolactam.
    Type: Application
    Filed: June 13, 2014
    Publication date: May 12, 2016
    Inventors: Nobuo Kobayashi, Tsuneo Koji, Hisatomo Kunii, Mizuho Ishikawa, Daisuke Morita
  • Publication number: 20150200520
    Abstract: A method for manufacturing a semiconductor device includes forming a lower light confinement layer on a substrate, a light absorption layer on the lower light confinement layer, and an upper light confinement layer on the light absorption layer; and removing parts of these layers to form an optical modulator, forming a laser section having a diffraction grating in a portion of the substrate where the optical modulator is not present, forming a diffusion constraining layer, which constrains diffusion of a dopant, on the upper light confinement layer, and forming a contact layer on the laser section and the diffusion constraining layer. The same dopant is present in the contact layer and the upper light confinement layer.
    Type: Application
    Filed: September 26, 2014
    Publication date: July 16, 2015
    Inventors: Daisuke Morita, Hiroyuki Kawahara, Shinji Kimura
  • Publication number: 20140034872
    Abstract: The present invention provides a precursor of positive electrode active substance particles for non-aqueous electrolyte secondary batteries which have a high discharge voltage and a high discharge capacity, hardly suffer from side reactions with an electrolyte solution, and are excellent in cycle characteristics, positive electrode active substance particles for non-aqueous electrolyte secondary batteries, and processes for producing these particles, and a non-aqueous electrolyte secondary battery.
    Type: Application
    Filed: December 26, 2011
    Publication date: February 6, 2014
    Applicant: Toda Kogyo Corporation
    Inventors: Hiroyasu Watanabe, Daisuke Morita, Manabu Yamamoto, Kazumichi Koga, Akihisa Kajiyama, Hiroaki Masukuni, Hideaki Sadamura, Ryuta Masaki, Kazutoshi Matsumoto
  • Patent number: 8592085
    Abstract: The present invention relates to nickel-cobalt-manganese-based compound particles which have a volume-based average secondary particle diameter (D50) of 3.0 to 25.0 ?m, wherein the volume-based average secondary particle diameter (D50) and a half value width (W) of the peak in volume-based particle size distribution of secondary particles thereof satisfy the relational formula: W?0.4×D50, and can be produced by dropping a metal salt-containing solution and an alkali solution to an alkali solution at the same time, followed by subjecting the obtained reaction solution to neutralization and precipitation reaction. The nickel-cobalt-manganese-based compound particles according to the present invention have a uniform particle size, a less content of very fine particles, a high crystallinity and a large primary particle diameter, and therefore are useful as a precursor of a positive electrode active substance used in a non-aqueous electrolyte secondary battery.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: November 26, 2013
    Assignee: Toda Kogyo Corporation
    Inventors: Masashi Kobino, Katsuhiro Fujita, Shoichi Fujino, Akihisa Kajiyama, Ryuta Masaki, Daisuke Morita, Takayuki Yamamura, Tetsuya Kodaira, Minoru Yamasaki, Seiji Okazaki, Toshiaki Hiramoto, Akino Sato, Wataru Oda, Kenji Okinaka
  • Publication number: 20130045421
    Abstract: The present invention relates to nickel-cobalt-manganese-based compound particles which have a volume-based average secondary particle diameter (D50) of 3.0 to 25.0 ?m, wherein the volume-based average secondary particle diameter (D50) and a half value width (W) of the peak in volume-based particle size distribution of secondary particles thereof satisfy the relational formula: W?0.4×D50, and can be produced by dropping a metal salt-containing solution and an alkali solution to an alkali solution at the same time, followed by subjecting the obtained reaction solution to neutralization and precipitation reaction. The nickel-cobalt-manganese-based compound particles according to the present invention have a uniform particle size, a less content of very fine particles, a high crystallinity and a large primary particle diameter, and therefore are useful as a precursor of a positive electrode active substance used in a non-aqueous electrolyte secondary battery.
    Type: Application
    Filed: October 21, 2010
    Publication date: February 21, 2013
    Inventors: Masashi Kobino, Katsuhiro Fujita, Shoichi Fujino, Akihisa Kajiyama, Ryuta Masaki, Daisuke Morita, Takayuki Yamamura, Tetsuya Kodaira, Minoru Yamasaki, Seiji Okazaki, Toshiaki Hiramoto, Akino Sato, Wataru Oda, Kenji Okinaka
  • Patent number: 8190603
    Abstract: An information providing system which provides accumulated information items in compliance with requests has an association unit which totals access logs to the information items in each predetermined access unit. The association unit associates the plurality of information items accessed in the predetermined access unit as relevant information items. The information providing system also has an information providing unit which provides a requested information item when any of the plurality of information items associated by the association unit has been requested and which simultaneously provides any other information associated with the requested information or an access portion to the other information.
    Type: Grant
    Filed: August 22, 2008
    Date of Patent: May 29, 2012
    Assignee: Fujitsu Limited
    Inventor: Daisuke Morita
  • Publication number: 20120066152
    Abstract: An estimate assisting apparatus includes an alternative storing unit that stores information regarding an alternative service corresponding to a certain service, a temporary estimate making unit to makes a temporary estimate on the basis of the certain service and other services that is determined through the telephone call, an alternative obtaining unit that obtains the information regarding the alternative service corresponding to the certain service from the alternative storing unit. A request screen generating unit that generates a request screen content which corresponds to the presented information and which displays information regarding the temporary estimate, a mail transmitting unit that transmits an estimate mail including the request screen content to a mail address of the client, and a request receiving unit that receives a request for a service by receiving the request mail which is transmitted using the request instructing unit and which includes estimate information.
    Type: Application
    Filed: September 8, 2011
    Publication date: March 15, 2012
    Applicant: FUJITSU LIMITED
    Inventor: Daisuke MORITA
  • Publication number: 20120059774
    Abstract: An estimate assisting apparatus makes a temporary estimate upon receiving presented information regarding a certain service, issues an identification number corresponding to the presented information, obtains information regarding an alternative service corresponding to the certain service that is received by the temporary estimate, and generates an estimate request screen that includes information regarding the temporary estimate. A display control unit causes a display device to display the estimate request screen. An estimate providing unit makes an estimate and provides the estimate based upon information regarding a service selected on the estimate request screen and the presented information.
    Type: Application
    Filed: August 31, 2011
    Publication date: March 8, 2012
    Applicant: FUJITSU LIMITED
    Inventor: Daisuke MORITA
  • Patent number: 8030665
    Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: October 4, 2011
    Assignee: Nichia Corporation
    Inventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
  • Publication number: 20090083259
    Abstract: An information providing system which provides accumulated information items in compliance with requests has an association unit which totals access logs to the information items in each predetermined access unit. The association unit associates the plurality of information items accessed in the predetermined access unit as relevant information items. The information providing system also has an information providing unit which provides a requested information item when any of the plurality of information items associated by the association unit has been requested and which simultaneously provides any other information associated with the requested information or an access portion to the other information.
    Type: Application
    Filed: August 22, 2008
    Publication date: March 26, 2009
    Applicant: FUJITSU LIMITED
    Inventor: Daisuke MORITA
  • Publication number: 20080296609
    Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.
    Type: Application
    Filed: April 30, 2008
    Publication date: December 4, 2008
    Applicant: Nichia Corporation
    Inventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
  • Publication number: 20080222122
    Abstract: An information search apparatus for searching an internal information resource within an apparatus and an external information resource connected via a network includes a search unit searching the internal information resource and the external information resource at the same time or in series based on an inputted search condition, and an information output unit outputting a search result.
    Type: Application
    Filed: March 3, 2008
    Publication date: September 11, 2008
    Applicant: FUJITSU LIMITED
    Inventor: Daisuke Morita
  • Publication number: 20080215592
    Abstract: An information processing apparatus and method determining whether a site corresponding to identification information of a request exists on a network, and registering identification information in a storage device based on a result of the determination.
    Type: Application
    Filed: December 12, 2007
    Publication date: September 4, 2008
    Applicant: FUJITSU LIMITED
    Inventor: Daisuke Morita
  • Publication number: 20080177707
    Abstract: Included are a request unit 17 requesting, when receiving a trigger occurring based on a command from a user and a predetermined time schedule, a Website 5 originating information via a communication network 4 to transmit an RSS feed defined as metadata of update information of the Website 5, an extracting unit 19 referring to the content of the RSS feed transmitted from the Website 5 and extracting the useful information as the information that should be provided to the user from within the RSS feed, and a display unit 3 displaying the extracted useful information.
    Type: Application
    Filed: October 31, 2007
    Publication date: July 24, 2008
    Applicant: FUJITSU LIMITED
    Inventors: Daisuke MORITA, Takeshi Kumazawa
  • Patent number: 7378334
    Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.
    Type: Grant
    Filed: February 1, 2006
    Date of Patent: May 27, 2008
    Assignee: Nichia Corporation
    Inventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
  • Publication number: 20070226208
    Abstract: In order for even a user not used to retrieval to be able to easily and rapidly obtain desired information, the information retrieval device 10 comprises a first retrieval unit 11 for performing retrieval, using a first retrieval character string, a retrieval result display unit 12 for outputting display data displaying identifiably second retrieval character string candidates together with its retrieval result, a second retrieval character string selection unit 13 capable of selecting a second retrieval character string and a second retrieval unit 14 for adding the second retrieval character string to the first retrieval character string and implementing the first retrieval unit 11.
    Type: Application
    Filed: June 6, 2006
    Publication date: September 27, 2007
    Applicant: FUJITSU LIMITED
    Inventors: Daisuke Morita, Shigeru Hidesawa
  • Patent number: 7105857
    Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.
    Type: Grant
    Filed: July 8, 2003
    Date of Patent: September 12, 2006
    Assignee: Nichia Corporation
    Inventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
  • Publication number: 20060128118
    Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.
    Type: Application
    Filed: February 1, 2006
    Publication date: June 15, 2006
    Applicant: Nichia Corporation
    Inventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
  • Patent number: 6883005
    Abstract: The present invention relates to the client machine and the server machine and the like which are connected to the communication line, and answers are accurately given to a question of a user of the client machine according to a level of that question. First, the solution of the answer is attempted inside the client machine (primary answer section 61) and, if not solved, an enquiry is made to the server machine (secondary answer request section 63) and, if not yet solved, a mail is transmitted to a support window (e-mail soft 66).
    Type: Grant
    Filed: January 29, 2002
    Date of Patent: April 19, 2005
    Assignee: Fujitsu Limited
    Inventors: Shigeru Hidesawa, Kazuhiko Nakamura, Daisuke Morita