Abstract: A nitride semiconductor device includes a first nitride semiconductor layer with an n-type conductivity, a second nitride semiconductor layer with a p-type conductivity, a source electrode in direct contact with the second nitride semiconductor layer and a mesa structure with two or more steps disposed in a termination region between an active region of the nitride semiconductor device and an inactive region surrounding the active region. The mesa structure includes a mesa at a first step in which a lower end of a side wall of the mesa is located in the second nitride semiconductor layer, and each of mesas at a second and subsequent steps in which a lower end of a side wall of the mesa reaches the first nitride semiconductor layer. The mesa at the first step has a depth that is half or more of a film thickness of the second nitride semiconductor layer.

Abstract: An information processing system capable of obtaining a total emission of greenhouse gas emitted until a secondary product is obtained by processing a primary product that is a printed matter. The information processing system includes a memory device storing instructions, and a processor executing the instructions to: obtain first information related to a process until a primary product, which is a printed matter obtained by an image forming apparatus printing on a print medium, is output, obtain second information related to a process until a second product, which is obtained by a postprocessing apparatus processing the primary product, is output, calculate emissions of greenhouse gas emitted from the image forming apparatus and the postprocessing apparatus based on the first information and the second information, and calculate a total emission of the greenhouse gas based on the emissions of greenhouse gas.

Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity type which is provided above the substrate; a second nitride semiconductor layer which is provided above the first nitride semiconductor layer; an electron transport layer and an electron supply layer which are sequentially provided above the second nitride semiconductor layer; a third nitride semiconductor layer and a gate electrode which are sequentially provided above the electron supply layer; a source electrode; and a drain electrode, the second nitride semiconductor layer includes: a current conducting portion of the first conductivity type which is located below the third nitride semiconductor layer and includes a first impurity; and a current blocking portion which is provided about the current conducting portion, and the concentration of the first impurity in the electron transport layer is lower than the concentration of the first impurity in the current conducting portion.

Abstract: On the basis of determination by image inspection that an image defect is generated and a predetermined condition being satisfied, an instruction unit for issuing an image diagnosis instruction is displayed on a screen of an inspection result, and image diagnosis is executed in response to an operation on the instruction unit.

Abstract: A nitride semiconductor device includes: a substrate; a first semiconductor layer of a first conductivity type disposed above the substrate; a second semiconductor layer of a second conductivity type disposed above the first semiconductor layer; a third semiconductor layer that includes a channel and is at least partially disposed above the second semiconductor layer; a gate electrode; a source electrode; a drain electrode; a first insulating layer disposed above the gate electrode and including nitride as a main component; and a second insulating layer disposed to cover a side surface of a groove that is provided in an edge termination area of the nitride semiconductor device. In the plan view, an end portion of the first insulating layer coincides with an end portion of the groove, or is positioned inside relative to the end portion of the groove and outside relative to an outermost periphery of the source electrode.

Abstract: A nitride semiconductor device includes: a substrate; an n-type drift layer; a p-type blocking layer; a gate opening which penetrates through the blocking layer to the drift layer; an electron transport layer and an electron supply layer provided on an inner face of the gate opening; a gate electrode above the electron supply layer and covering the gate opening; a source opening penetrating through the electron supply layer and the electron transport layer to the blocking layer; a source electrode covering the source opening, the source electrode being connected to the electron supply layer, the electron transport layer, and the blocking layer; and a drain electrode on a side of the substrate opposite from a side on which the blocking layer is located. A bottom face of the gate electrode is closer to the drain electrode than a bottom face of the blocking layer is.

Abstract: A battery monitoring method includes acquiring monitoring data of a secondary battery, identifying a degradation factor based on the acquired monitoring data, and setting a usage condition of the secondary battery based on a degradation factor of the secondary battery.

Abstract: A battery monitoring method includes: obtaining a malfunction prediction sign of a secondary battery; examining a battery characteristic of the secondary battery only on obtaining the malfunction prediction sign of the secondary battery; instructing placement of a preliminary order for a replacement secondary battery to replace the secondary battery only on obtaining the malfunction prediction sign of the secondary battery; and instructing placement of an official order for the replacement secondary battery on determining that the secondary battery is not usable based on an examination result of the battery characteristic.

Abstract: A nitride semiconductor device includes: a substrate; a drift layer, a high-resistance layer, and a first base layer above the substrate in stated order; a gate opening penetrating through the first base layer and the high-resistance layer to the drift layer; an electron transport layer and an electron supply layer covering an upper portion of the first base layer and the gate opening; a gate electrode above the electron supply layer; a source electrode in contact with the electron supply layer; an electrode opening penetrating through the electron supply layer and the electron transport layer to the first base layer; a potential fixing electrode in contact with the first base layer at a bottom part of the electrode opening; and a drain electrode below the substrate.

Abstract: A nitride semiconductor device includes: a substrate; an n-type drift layer; a p-type blocking layer; a gate opening which penetrates through the blocking layer to the drift layer; an electron transport layer and an electron supply layer provided on an inner face of the gate opening; a gate electrode above the electron supply layer and covering the gate opening; a source opening penetrating through the electron supply layer and the electron transport layer to the blocking layer; a source electrode covering the source opening, the source electrode being connected to the electron supply layer, the electron transport layer, and the blocking layer; and a drain electrode on a side of the substrate opposite from a side on which the blocking layer is located. A bottom face of the gate electrode is closer to the drain electrode than a bottom face of the blocking layer is.

Abstract: A nitride semiconductor device includes a substrate, a first electron transport layer above the substrate, a first electron supply layer above the first electron transport layer, a first nitride semiconductor layer above the first electron supply layer, a first opening passing through the first nitride semiconductor layer and the first electron supply layer and reaching the first electron transport layer, a second electron transport layer disposed above the first nitride semiconductor layer and along the inner surface of the first opening, a second electron supply layer disposed above the second electron transport layer and covering the first opening, a gate electrode disposed above the second electron supply layer and covering the first opening, a source electrode connected to the first nitride semiconductor layer and the second electron transport layer, and a drain electrode.

Abstract: A nitride semiconductor device includes: a substrate; a nitride semiconductor layer above the substrate; a high-resistance layer above the nitride semiconductor layer; a p-type nitride semiconductor layer above the high-resistance layer; a first opening penetrating through the p-type nitride semiconductor layer and the high-resistance layer to the nitride semiconductor layer; an electron transport layer and an electron supply layer covering an upper portion of the p-type nitride semiconductor layer and the first opening; a gate electrode above the electron supply layer; a source electrode in contact with the electron supply layer; a second opening penetrating through the electron supply layer and the electron transport layer to the p-type nitride semiconductor layer; a potential fixing electrode in contact with the p-type nitride semiconductor layer at a bottom part of the second opening; and a drain electrode.

Abstract: A printing system includes a printing apparatus and a server, wherein the printing apparatus prints, based on image data, an image on a sheet, and wherein the server stores a history showing that a user accessed image data, identifies image data based on the stored history, and notifies the user of the identified image data, wherein the printing apparatus prints an image on a sheet based on image data selected by the user from image data that the user has been notified of.

Abstract: A nitride semiconductor device, including a substrate with a first nitride semiconductor layer on its surface, a block layer, an electron transit layer and an electron supply layer sequentially formed thereon. Formed along an inner surface thereof a first opening penetrating through the block layer to the first nitride semiconductor layer, a source electrode provided in a second opening in a location away from the first opening and connected to the block layer. The second opening penetrating through the electron supply and electron transit layers to the block layer. On an opposite surface of the substrate a drain electrode is provided. Seen in plan view, the first opening and the source electrode extend in a same, longitudinal direction, and the first opening includes: two straight portions extending in the longitudinal direction with the source electrode being interposed therebetween, and a first connection portion connecting ends of the two straight portions.

Abstract: A nitride semiconductor device includes a substrate, a drift layer and a block layer sequentially provided above the substrate, a gate opening penetrating through a block layer and reaching a drift layer, an electron transit layer and an electron supply layer sequentially provided above the block layer and along the inner surface of the gate opening, a gate electrode provided to cover the gate opening, a source opening penetrating through an electron supply layer and an electron transit layer and reaching the block layer, a source electrode provided in the source opening, and a drain electrode on the rear surface side of the substrate. Seen in a plan view, at least part of an outline of an end of the gate opening in the longitudinal direction follows an arc or an elliptical arc.

Abstract: A nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a first high-resistance semiconductor layer, a first p-type nitride semiconductor layer, and a second high-resistance semiconductor layer that are arranged sequentially from a lower side; an electron mobility layer and an electron supply layer covering a first opening that penetrates through the second high-resistance semiconductor layer, the first p-type nitride semiconductor layer, and the first high-resistance semiconductor layer; a potential-fixing electrode that is disposed in contact with the first p-type nitride semiconductor layer; and an insulating film that covers a gate electrode and a source electrode. The insulating film is disposed along an inner surface of a groove portion that is disposed in an end portion of the nitride semiconductor device, and penetrates through the first p-type nitride semiconductor layer. The first high-resistance semiconductor layer is a high-resistance AlGaN layer.

Abstract: A nitride semiconductor device includes a substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer that has a resistance higher than that of the second semiconductor layer, and a fourth semiconductor layer of the second conductivity type that are arranged sequentially from a lower side; a fifth semiconductor layer including a channel region of the first conductivity type, a portion of the fifth semiconductor layer being disposed along the inner surface of a first opening and the other portion of the fifth semiconductor layer being disposed above the fourth semiconductor layer, the first opening penetrating through the fourth semiconductor layer, the third semiconductor layer, and the second semiconductor layer; a sixth semiconductor layer of the second conductivity type disposed above the fifth semiconductor layer; a gate electrode; a source electrode; and a drain electrode.

Abstract: Nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity above the substrate; a second nitride semiconductor layer of a second conductivity different from the first conductivity, above the first nitride semiconductor layer; a first opening penetrating through the second nitride semiconductor layer; an electron transport layer and an electron supply layer disposed along inner surfaces of the first opening, in stated sequence from the substrate-side; a gate electrode above the electron supply layer, covering the first opening; a source electrode connected to the electron supply layer and the electron transport layer, at a position separated from the gate electrode; and a drain electrode on a surface of the substrate opposite to a surface on which the first nitride semiconductor layer is disposed. At least part of the second nitride semiconductor layer is fixed to a potential different from a potential of the source electrode.

Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer; a second nitride semiconductor layer; a first opening penetrating through the second nitride semiconductor layer to the first nitride semiconductor layer; a second opening penetrating through the second nitride semiconductor layer to the first nitride semiconductor layer; an electron transport layer and an electron supply layer provided along an inner face of each of the first opening and the second opening and above the second nitride semiconductor layer; a gate electrode; an anode electrode; a third opening penetrating through the electron supply layer and the electron transport layer to the second nitride semiconductor layer; a source electrode in the third opening; a drain electrode; and a cathode electrode. The anode electrode and the source electrode are electrically connected, and the cathode electrode and the drain electrode are electrically connected.

Abstract: A nitride semiconductor device includes: a substrate; an n-type drift layer; a p-type blocking layer; a gate opening which penetrates through the blocking layer to the drift layer; an electron transport layer and an electron supply layer provided on an inner face of the gate opening; a gate electrode above the electron supply layer and covering the gate opening; a source opening penetrating through the electron supply layer and the electron transport layer to the blocking layer; a source electrode covering the source opening, the source electrode being connected to the electron supply layer, the electron transport layer, and the blocking layer; and a drain electrode on a side of the substrate opposite from a side on which the blocking layer is located. A bottom face of the gate electrode is closer to the drain electrode than a bottom face of the blocking layer is.