Abstract: A communication system includes a server that stores setting information notified from a communication apparatus. The communication apparatus is operable in a first mode and a second mode and includes a reception device to receive an instruction, and a controller to, in accordance with a changing instruction regarding a predetermined function received via the reception device when the first mode is set, notify the server of setting information based on the changing instruction and, in accordance with the changing instruction when the second mode is set, not notify the server of the setting information based on the changing instruction. When a switching instruction for switching from the first mode to the second mode is received, the communication apparatus notifies the server of the setting information which corresponds to the changing instruction received before the switching instruction was received and which has not been notified to the server.

Abstract: An information processing apparatus configured to manage operation log information about an external apparatus and communicate with a communication apparatus communicating with the external apparatus, includes at least one controller configured to acquire the operation log information about the external apparatus and to transmit, upon receiving a notification from the communication apparatus, state information based on the operation log information, to the communication apparatus. The notification indicates a communication error in communication between the external apparatus and the communication apparatus, wherein a message based on the state information is displayed on the communication apparatus.

Abstract: A coating material for preventing metal corrosion contains 50 to 99% by mass of an inorganic layered compound having an average particle size of 10 ?m or less; 1 to 50% by mass of a corrosion inhibitor; and a liquid medium, in which the total content of the inorganic layered compound and the corrosion inhibitor is 100% by mass.

Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity type; a second nitride semiconductor layer of a second conductivity type; an electron transport layer and an electron supply layer provided, in that order from a side on which the substrate is located, above the second nitride semiconductor layer and on an inner surface of a first opening; a gate electrode provided above the electron supply layer and covering the first opening; a source electrode provided in a second opening and connected to the second nitride semiconductor layer; a drain electrode; a third opening at an outermost edge part in a plan view of the substrate; and a potential fixing electrode provided in the third opening, the potential fixing electrode being connected to the second nitride semiconductor layer and in contact with neither the electron transport layer nor the electron supply layer.

Abstract: A nitride semiconductor device includes: a substrate having a first main surface and a second main surface; a first nitride semiconductor layer of a first conductivity type provided above the first main surface; a second nitride semiconductor layer of a second conductivity type provided above the first nitride semiconductor layer; a first opening which penetrates through the second nitride semiconductor layer to the first nitride semiconductor layer; an electron transport layer provided above the second nitride semiconductor layer and on an inner surface of the first opening; a gate electrode provided above the electron transport layer and covering the first opening; a source electrode connected to the second nitride semiconductor layer; a drain electrode provided on a second main surface-side of the substrate; and a high-resistance layer provided between the second nitride semiconductor layer and the electron transport layer in the first opening, the high-resistance layer including a nitride semiconductor.

Abstract: A semiconductor relay includes: a substrate; a semiconductor layer of a direct transition type which is on the substrate and which has semi-insulating properties; a p-type semiconductor layer on at least part of the semiconductor layer; a first electrode; and a second electrode. The first electrode is electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer. The second electrode is spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, and the first electrode includes a first opening part.

Abstract: A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.

Abstract: A server apparatus that communicates with a plurality of information processing apparatuses and transmits synchronization data based on a database to an information processing apparatus that has requested data acquisition includes a hard disk drive (HDD) that stores the database, and at least one controller that updates the database based on update data transmitted from one information processing apparatus from among the plurality of information apparatuses, and receives a request for data acquisition and does not access the database when a transmission source of the request is the one information processing apparatus.

Abstract: A server apparatus collects, from a plurality of information processing apparatuses, time series information indicating a change over time in settings and a state of each information processing apparatus, and error information indicating an error that has occurred in each information processing apparatus, generates learning data including the collected information, and generates a diagnostic model, which is a trained model for a malfunction diagnosis in the information processing apparatus, through learning based on the generated learning data. The information processing apparatus obtains the diagnostic model from the server apparatus, outputs a diagnosis result indicating a likelihood that an error will occur in the information processing apparatus by collecting information necessary for the malfunction diagnosis within the information processing apparatus and executing the malfunction diagnosis using the collected information and the obtained diagnostic model.

Abstract: A nitride semiconductor device includes a substrate; a first nitride semiconductor layer above the substrate; a block layer above the first nitride semiconductor layer; a first opening penetrating through the block layer; an electron transit layer and an electron supply layer provided sequentially above the block layer and along an inner surface of the first opening; a gate electrode provided above the electron supply layer to cover the first opening; a second opening penetrating through the electron supply layer and the electron transit layer; a source electrode provided in the second opening; and a drain electrode. When the first main surface is seen in a plan view, (i) the first opening and the source electrode each are elongated in a predetermined direction, and (ii) at least part of an outline of a first end of the first opening in a longitudinal direction follows an arc or an elliptical arc.

Abstract: The present invention provides a coating fluid including: a hydroxy group-containing resin; an inorganic layered compound; and a liquid medium, in which a ratio (outflow time (B)/outflow time (A)) of outflow time (B) of a coating fluid at 5° C. measured by a Zahn cup to outflow time (A) of a coating fluid at 24° C. measured by a Zahn cup is 1.40 or less.

Abstract: A battery structure includes a plurality of batteries each made of lithium-ion secondary battery; and a plurality of arrangement portions in which the plurality of batteries are arranged. The plurality of arrangement portions are divided into two groups of: a upper heat transfer group having heat transfer orders higher than a center value of the heat transfer orders, where the heat transfer orders are respective amount of heat transfer from the batteries being ranked in descending order; and a lower heat transfer group having the heat m transfer orders lower than the center value. A battery among the plurality of batteries showing the highest value of a lithium deposition tolerance which represents a degree of lithium being unlikely to deposit during charge/discharge operation, is disposed in a high tolerance arrangement portion in the plurality of arrangement portions, the high tolerance arrangement portion belonging to the upper heat transfer group.

Abstract: An image reading apparatus configured to cause a document placed on a document tray to be conveyed based on information about a thickness of the document includes a detector configured to detect the document placed on the document tray, a display device configured to display an object for setting the thickness of the document when the detector detects the document placed on the document tray, a sheet conveyance controller configured to cause a sheet conveyance device to convey the document based on information about the thickness of the document set by the object displayed by the display device, and a reader configured to read an image of the document conveyed by the sheet conveyance device, wherein the image reading apparatus receives a setting as to whether a screen for setting the thickness of the document is to be displayed when the detector detects the placed document.

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer; a first opening penetrating the second nitride semiconductor layer; an electron transit layer and an electron supply layer which are formed along an upper surface of the second nitride semiconductor layer and a recessed surface of the first opening; a gate electrode disposed above the electron supply layer; a second opening penetrating the electron supply layer and the electron transit layer; a source electrode disposed to cover the second opening and electrically connected to the second nitride semiconductor layer; and a drain electrode disposed on a back surface of the substrate. The electron supply layer has a side surface formed along a side surface of the first opening. The gate electrode is not disposed on the side surface of the electron supply layer.

Abstract: An information processing apparatus configured to manage operation log information about an external apparatus and communicate with a communication apparatus communicating with the external apparatus, includes at least one controller configured to acquire the operation log information about the external apparatus and to transmit, upon receiving a notification from the communication apparatus, state information based on the operation log information, to the communication apparatus. The notification indicates a communication error in communication between the external apparatus and the communication apparatus, wherein a message based on the state information is displayed on the communication apparatus.

Abstract: A device for providing cutaneous sensations to a fingertip includes a lower base, an upper platform positioned over and mechanically connected to the lower base, and a shear plate positioned between the lower base and the upper platform and mechanically connected to the lower base. When a fingertip is positioned between the upper platform and the lower base, the upper platform is selectively vertically translatable relative to the lower base to provide a compressive force, and the shear plate is selectively laterally translatable relative to the lower base to provide a shear force. Accordingly, a wearable fingertip device having two degrees-of-freedom (DoF) to provide consecutive and/or concurrent compressive force and/or shear force to a fingertip is provided. The wearable fingertip device can be used in various scenarios; is portable, easily wearable, and easily manufacturable; and has low overall operating power requirements.

Abstract: An electrode active material for a nonaqueous electrolyte secondary battery includes: a core part including at least one of an inorganic oxide and a carbon-composite inorganic composite oxide; and a shell part for carbon coating on the core part. The electrode active material has a specific surface area of 6.0 m2/g or more. The electrode active material has a moisture content of 400 ppm or less, which is measured by a Karl Fischer method such that the electrode active material is heated in a heat-evaporating manner, and continuously maintained at 250° C. for 40 minutes without exposing to an atmosphere after the electrode active material is exposed to the atmosphere to absorb moisture to be saturated.

Abstract: A semiconductor device includes: a substrate; a drift layer which is disposed on the substrate and has a groove; an underlayer which is disposed above the drift layer; a first opening which penetrates the underlayer to reach the drift layer; an electron transit layer and an electron supply layer which are disposed to cover the first opening; a second opening which penetrates the electron supply layer and the electron transit layer to reach the underlayer; a gate electrode which is disposed above the electron supply layer at a position corresponding to a position of the first opening; a source electrode which is disposed to cover the second opening and in contact with the underlayer; and a drain electrode which is disposed on a backside surface of the substrate. A bottom surface of the groove is closer to the substrate than a bottom surface of the first opening.

Abstract: A server apparatus that communicates with a plurality of information processing apparatuses and transmits synchronization data based on a database to an information processing apparatus that has requested data acquisition includes a hard disk drive (HDD) that stores the database, and at least one controller that updates the database based on update data transmitted from one information processing apparatus from among the plurality of information apparatuses, and receives a request for data acquisition and does not access the database when a transmission source of the request is the one information processing apparatus.

Abstract: A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.