Abstract: An electrode includes an electrode material, which includes: a core part made of an active substance having a polyanion structure having Mn; and a shell part obtained by covering a surface of the core part with carbon. In addition, an amount of water, as measured by Karl Fischer's method when the electrode is held at 250° C. for 40 minutes after adsorbed water is volatilized by heating, is 1500 ppm or less.

Abstract: After start of replication, backup data for restoring master data managed by a data management apparatus according to a restoration instruction is obtained. A content in the obtained backup data is designated as data for replication, and the data for replication is transmitted to an apparatus that is a replication destination. Data managed by the data management apparatus is restored using the obtained backup data.

Abstract: A device for providing cutaneous sensations to a fingertip 10 includes a lower base, an upper platform positioned over and mechanically connected to the lower base, and a shear plate positioned between the lower 36 base and the upper platform and mechanically connected to the lower base. When a fingertip is positioned between the upper platform and the lower base, the upper platform is selectively vertically translatable relative to the lower base to provide a compressive force, and the shear plate is selectively laterally translatable relative to the lower base to provide a shear force. Accordingly, a wearable fingertip device having two degrees-of-freedom (DoF) to provide consecutive and/or concurrent compressive force and/or shear force to a fingertip is provided. The wearable fingertip device can be used in various scenarios; is portable, easily wearable, and easily manufacturable; and has low overall operating power requirements.

Abstract: A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusion; a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer; and a cathode electrode disposed under the second major surface, and a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface.

Abstract: A bearing cap (1) is attached to a bulkhead (22) of a cylinder block (21) made of a light metal through a pair of bolts (24). The bearing cap (1) has a frame (2) made of an iron-based metal and a cast light-alloy part (3). The frame (2) has a pair of pillar parts (9) through which the bolts (24) extend and a circular-arc-shaped arch section (10). At high temperatures, the span of the pair of the bolts (24) increases due to thermal expansion of the light-alloy material, and the pair of the pillar parts (9) expand. This causes the middle part of the arch section (10) to shift upward, thereby suppressing an increase in bearing clearance.

Abstract: An information processing apparatus is configured in the following manner. When a client is connected to a server, the client transmits all of setting information that the client handles as a synchronization target to the server. The server returns an error response to prohibit synchronization in response to transmission of a setting item that the server does not handle as the synchronization target among the setting information transmitted from the client. After that, the client apparatus does not notify the server of a content of an update with respect to the setting information of the setting item to which the error response is returned when the client is connected to the server.

Abstract: A thermostable cellobiohydrolase, having a cellobiohydrolase catalytic domain including: (A) a polypeptide including the amino acid sequence represented by SEQ ID NO: 1, (B) a polypeptide including an amino acid sequence in which at least one amino acid has been deleted, substituted, or added in the amino acid sequence represented by SEQ ID NO: 1, and having hydrolysis activity against a substrate of phosphoric acid swollen Avicel at least under conditions of 65° C. and pH 6, or (C) a polypeptide including an amino acid sequence having 80% or greater sequence identity with the amino acid sequence represented by SEQ ID NO: 1, and having hydrolysis activity against a substrate of phosphoric acid swollen Avicel at least under conditions of 65° C. and pH 6.

Abstract: A nitride semiconductor device includes: a substrate of a first conductivity type having a first surface and a second surface on a side of the substrate opposite the first surface; a first nitride semiconductor layer of the first conductivity type which is disposed on the first surface of the substrate and includes an acceptor impurity; a second nitride semiconductor layer of a second conductivity type disposed on the first nitride semiconductor layer, the second conductivity type being opposite to the first conductivity type; a first electrode disposed on the second surface of the substrate; a second electrode disposed on the first nitride semiconductor layer; and a gate electrode disposed on the second nitride semiconductor layer.

Abstract: When data subjected to synchronous communication is changed while an information processing apparatus is set in a stop mode in which synchronous communication with a server is stopped, it is determined whether to synchronize the changed data and data in the server. When it is determined to synchronize the changed data and the data in the server, the changed data is transmitted to the server by synchronous communication even if the stop mode is set.

Abstract: A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer above the n-type drift layer; a gate opening in the base layer that reaches the drift layer; an n-type channel forming layer that covers the gate opening and has a channel region; a gate electrode above a section of the channel forming layer in the gate opening; an opening that is separated from the gate electrode and reaches the base layer; an opening formed in a bottom surface of said opening and reaching the drift layer; a source electrode covering the openings; and a drain electrode on the rear surface of the substrate.

Abstract: When data subjected to synchronous communication is changed while an information processing apparatus is set in a stop mode in which synchronous communication with a server is stopped, it is determined whether to synchronize the changed data and data in the server. When it is determined to synchronize the changed data and the data in the server, the changed data is transmitted to the server by synchronous communication even if the stop mode is set.

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer; a first opening penetrating the second nitride semiconductor layer; an electron transit layer and an electron supply layer which are formed along an upper surface of the second nitride semiconductor layer and a recessed surface of the first opening; a gate electrode disposed above the electron supply layer; a second opening penetrating the electron supply layer and the electron transit layer; a source electrode disposed to cover the second opening and electrically connected to the second nitride semiconductor layer; and a drain electrode disposed on a back surface of the substrate. The electron supply layer has a side surface formed along a side surface of the first opening. The gate electrode is not disposed on the side surface of the electron supply layer.

Abstract: A semiconductor device includes: a substrate; a drift layer which is disposed on the substrate and has a groove; an underlayer which is disposed above the drift layer; a first opening which penetrates the underlayer to reach the drift layer; an electron transit layer and an electron supply layer which are disposed to cover the first opening; a second opening which penetrates the electron supply layer and the electron transit layer to reach the underlayer; a gate electrode which is disposed above the electron supply layer at a position corresponding to a position of the first opening; a source electrode which is disposed to cover the second opening and in contact with the underlayer; and a drain electrode which is disposed on a backside surface of the substrate. A bottom surface of the groove is closer to the substrate than a bottom surface of the first opening.

Abstract: A thermostable cellobiohydrolase, having a cellobiohydrolase catalytic domain including: (A) a polypeptide including the amino acid sequence represented by SEQ ID NO: 1 or 2, (B) a polypeptide including an amino acid sequence in which at least one amino acid has been deleted, substituted, or added in the amino acid sequence represented by SEQ ID NO: 1 or 2, and having hydrolysis activity against a substrate of phosphoric acid swollen Avicel at least under conditions of 75° C. and pH 5.5, or (C) a polypeptide including an amino acid sequence having 75% or greater sequence identity with the amino acid sequence represented by SEQ ID NO: 1 or 2, and having hydrolysis activity against a substrate of phosphoric acid swollen Avicel at least under conditions of 75° C. and pH 5.5.

Abstract: A coating material for preventing metal corrosion contains 50 to 99% by mass of an inorganic layered compound having an average particle size of 10 ?m or less; 1 to 50% by mass of a corrosion inhibitor; and a liquid medium, in which the total content of the inorganic layered compound and the corrosion inhibitor is 100% by mass.

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.

Abstract: An information processing apparatus is configured in the following manner. When a client is connected to a server, the client transmits all of setting information that the client handles as a synchronization target to the server. The server returns an error response to prohibit synchronization in response to transmission of a setting item that the server does not handle as the synchronization target among the setting information transmitted from the client. After that, the client apparatus does not notify the server of a content of an update with respect to the setting information of the setting item to which the error response is returned when the client is connected to the server.

Abstract: A thermostable glycoside hydrolase includes a polypeptide including the amino acid sequence represented by SEQ ID NO: 1, and at least one moiety selected from the group consisting of a cellulose-binding module, a linker region, a signal peptide and a tag. A glycoside hydrolase mixture includes a hermostable glycoside hydrolase and at least one other glycoside hydrolase, in which the thermostable glycoside hydrolase is encoded by a polynucleotide including the nucleotide sequence encoding the polypeptide having the amino acid sequence of SEQ ID NO: 1 and the nucleotide sequence encoding at least one moiety selected from the group consisting of a cellulose-binding module, a linker region, a signal peptide and a tag. The thermostable glycoside hydrolase is produced by a method including generating the thermostable glycoside hydrolase in a transformant. The transformant is introduced in an expression vector.

Abstract: A thermostable cellobiohydrolase, having a cellobiohydrolase catalytic domain including: (A) a polypeptide including the amino acid sequence represented by SEQ ID NO: 1 or 2, (B) a polypeptide including an amino acid sequence in which at least one amino acid has been deleted, substituted, or added in the amino acid sequence represented by SEQ ID NO: 1 or 2, and having hydrolysis activity against a substrate of phosphoric acid swollen Avicel at least under conditions of 75° C. and pH 5, or (C) a polypeptide including an amino acid sequence having 60% or greater sequence identity with the amino acid sequence represented by SEQ ID NO: 1 or 2, and having hydrolysis activity against a substrate of phosphoric acid swollen Avicel at least under conditions of 75° C. and pH 5.

Abstract: The thermostable cellobiohydrolase of the present invention is a polypeptide which has cellobiohydrolase activity at least under conditions of a temperature of 75° C. and a pH of 5.5, and which includes a polypeptide including an amino acid sequence represented by SEQ ID NO: 1, 3, 5, or 7, a polypeptide including an amino acid sequence in which one or several amino acids are deleted, substituted, or added in an amino acid sequence represented by SEQ ID NO: 1, 3, 5, or 7, or a polypeptide including an amino acid sequence having 80% or greater but less than 100% sequence identity with an amino acid sequence represented by SEQ ID NO: 1, 3, 5, or 7.