Abstract: Disclosed herein are devices for molecule detection and methods for using detection devices for molecule detection, such as nucleic acid sequencing. In some embodiments, a detection device comprises one or more pole pieces, one or more sensors, each of the one or more sensors coupled to at least one of the one or more pole pieces, and detection circuitry coupled to the one or more sensors. The detection circuitry is configured to detect a characteristic of each of the one or more sensors, the characteristic indicating presence or absence of one or more magnetic nanoparticles (MNPs) coupled to at least one of a plurality of molecules to be detected, and at least one of the one or more pole pieces is operable to draw the one or more MNPs toward at least one of the one or more sensors.

Abstract: A memory system is provided that includes a first memory array including a first memory cell, a second memory array including a second memory cell, and a memory controller configured to determine a threshold voltage of the second memory cell to compensate a drift of a threshold voltage of the first memory cell and/or determine an offset voltage of the second memory cell to compensate an offset voltage of the first memory cell.

Abstract: Disclosed herein are improved methods and systems for sequencing nucleic acid that exploit the temperature-dependence of the emitted intensity of fluorescent dyes. The temperature of the sequencing reaction is adjusted during each sequencing cycle, and the emission, or lack of emission, of light meeting or exceeding a threshold by the fluorescent dyes at different temperatures, or within different temperature ranges, is used to detect the fluorescent labels of the incorporated dNTPs and thereby sequence the nucleic acid. The disclosed methods enable a determination of the dNTP incorporated at any given site with a reasonable number of chemistry steps without the complex optics necessary for prior-art systems.

Abstract: A memory system is provided that includes a first memory array including a first memory cell, a second memory array including a second memory cell, and a memory controller configured to determine a threshold voltage of the second memory cell to compensate a drift of a threshold voltage of the first memory cell and/or determine an offset voltage of the second memory cell to compensate an offset voltage of the first memory cell.

Abstract: A computing reservoir comprised of a plurality of oscillator components configured to receive input data and produce one or more output signals, and a feedback loop coupled to an output of the network, wherein the feedback loop is comprised of circuitry configured to establish and maintain an optimal operating point of the network based upon the output of the network.

Abstract: A reservoir computing system comprising an input layer configured to receive input data from a signal propagation channel and to convert the input data into fixed input values, a reservoir configured to receive the fixed input values and generate a set of trained output values, and an output layer configured to receive the set of trained output values and generate a probability distribution based on the set of trained output values. The reservoir is comprised of a plurality of integrated oscillator components coupled in a fixed, random network, wherein each of the oscillator components is comprised of a device characterized by a current-voltage curve that comprises a region of non-linear behavior, such as a negative differential resistance (NDR) behavior.

Abstract: A method is provided that includes applying a read voltage to a resistance-switching memory cell to determine a first memory cell resistance, applying a first write voltage to the resistance-switching memory cell, applying the read voltage to the resistance-switching memory cell to determine a second memory cell resistance, and comparing the first memory cell resistance to the second memory cell resistance to determine that the resistance-switching memory cell is in a first memory state or a second memory state.

Abstract: Disclosed herein are detection devices, systems, and methods that use magnetic nanoparticles (MNPs) to allow molecules to be identified. Embodiments of this disclosure include magnetic sensors (e.g., magnetoresistive sensors) that can be used to detect temperature-dependent magnetic fields (or changes in magnetic fields) emitted by MNPs, and, specifically to distinguish between the presence and absence of magnetic fields emitted, or not emitted, by MNPs at different temperatures selected to take advantage of knowledge of how the MNPs' magnetic properties change with temperature. Embodiments disclosed herein may be used for nucleic acid sequencing, such as deoxyribonucleic acid (DNA) sequencing.

Abstract: Disclosed herein is a detection device comprising sensors with spin torque oscillators (STOs), at least one fluidic channel configured to receive molecules to be detected, and detection circuitry coupled to the sensors. At least some of the molecules to be detected are labeled by magnetic nanoparticles (MNPs). The presence of one or more MNPs in the vicinity of a STO subjected to a bias current changes the oscillation frequency of the STO. The sensors are encapsulated by a material, such as an insulator, separating the sensors from the at least one fluidic channel. A surface of the material provides binding sites for the molecules to be detected. The detection circuitry is configured to detect changes in the oscillation frequencies of the sensors in response to presence or absence of one or more MNPs coupled to one or more binding sites associated with the sensors.

Abstract: Devices and methods for molecule detection using such devices are disclosed herein. A molecule detection device comprises at least one fluidic channel configured to receive molecules to be detected, a sensor comprising a spin torque oscillator (STO) and encapsulated by a material separating the sensor from the at least one fluidic channel, and detection circuitry coupled to the sensor. At least some of the molecules to be detected are labeled by magnetic nanoparticles (HNPs). A surface of the material provides binding sites for the molecules to be detected. The detection circuitry is configured to detect a frequency or frequency noise of a radio-frequency (RF) signal generated by the STO in response to presence or absence of at least one MNP coupled to one or more binding sites associated with the sensor.

Abstract: A sensing device comprises a plurality of magnetoresistive (MR) sensors, at least one fluidic channel, and detection circuitry coupled to the MR sensors. Each MR sensor is configured to detect the presence of molecules (e.g., biologic molecules) labeled by magnetic nanoparticles (MNPs). The sensors are encapsulated by an insulating material that protects the sensors from the contents of the at least one fluidic channel. The insulating material has a surface within the fluidic channel that provides sites for binding the molecules to be detected. The detection circuitry is configured to detect (a) a characteristic of magnetic noise of each MR sensor, the characteristic being influenced by a presence or absence of one or more MNPs at each site, or (b) a change in resistance, current, and/or voltage drop of each MR sensor, wherein the change is influenced by the presence or absence of one or more MNPs at each site.

Abstract: Disclosed herein are detection devices, systems including such detection devices, and methods of using such detection devices. A detection device comprises a fluidic channel configured to receive a plurality of molecules to be detected, a plurality of temperature sensors, and an insulating material encapsulating the plurality of temperature sensors and providing a barrier between the plurality of temperature sensors and contents of the fluidic channel. A surface of the insulating material within the fluidic channel provides a plurality of sites for binding the plurality of molecules to be detected. Each of the plurality of temperature sensors is configured to detect, in the presence of an alternating magnetic field, a temperature change indicating presence or absence of one or more magnetic nanoparticles (MNPs) coupled to at least one of the plurality of molecules to be detected at a respective subset of the plurality of sites.

Abstract: A ferroelectric memory device contains a two-dimensional semiconductor material layer having a band gap of at least 1.1 eV and at least one of a thickness of 1 to 5 monolayers of atoms of the semiconductor material or includes a two-dimensional charge carrier gas layer, a source contact contacting a first portion of the two-dimensional semiconductor material layer, a drain contact contacting a second portion of the two-dimensional semiconductor material layer, a ferroelectric memory element located between the source and drain contacts and adjacent to a first surface of the two-dimensional semiconductor material layer, and a conductive gate electrode located adjacent to the ferroelectric memory element.

Abstract: A ferroelectric memory device contains a two-dimensional semiconductor material layer having a band gap of at least 1.1 eV and at least one of a thickness of 1 to 5 monolayers of atoms of the semiconductor material or includes a two-dimensional charge carrier gas layer, a source contact contacting a first portion of the two-dimensional semiconductor material layer, a drain contact contacting a second portion of the two-dimensional semiconductor material layer, a ferroelectric memory element located between the source and drain contacts and adjacent to a first surface of the two-dimensional semiconductor material layer, and a conductive gate electrode located adjacent to the ferroelectric memory element.

Abstract: A ferroelectric memory device contains a two-dimensional semiconductor material layer having a band gap of at least 1.1 eV and at least one of a thickness of 1 to 5 monolayers of atoms of the semiconductor material or includes a two-dimensional charge carrier gas layer, a source contact contacting a first portion of the two-dimensional semiconductor material layer, a drain contact contacting a second portion of the two-dimensional semiconductor material layer, a ferroelectric memory element located between the source and drain contacts and adjacent to a first surface of the two-dimensional semiconductor material layer, and a conductive gate electrode located adjacent to the ferroelectric memory element.

Abstract: To provide enhanced data storage devices and systems, various systems, architectures, apparatuses, and methods, are provided herein. In a first example, a resistive memory device is provided. The resistive memory device includes an active region having resistance properties that can be modified to store one or more data bits in the resistive memory device, and at least one sidewall portion of the active region comprising a dopant configured to suppress conductance paths in the active region proximate to the at least one sidewall portion. The resistive memory device includes terminals configured to couple the active region to associated electrical contacts.

Abstract: To provide enhanced data storage devices and systems, various systems, architectures, apparatuses, and methods, are provided herein. In a first example, a resistive memory device is provided. The resistive memory device comprises a substrate, and an active region having resistance properties that can be modified to store one or more data bits, the active region comprising region of the substrate with a chemically altered reduction level to establish a resistive memory property in the substrate. The resistive memory device comprises terminals formed into the substrate and configured to couple the active region to associated electrical contacts.

Abstract: An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants.

Abstract: A surge protection device contains a first electrode, a second electrode electrically connected to electrical ground, and a field-induced switching component electrically contacting the first electrode and the second electrode. The field-induced switching component can include a correlated-electron material or a volatile conductive bridge.

Abstract: An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants.