Abstract: In an embodiment an optoelectronic package includes a carrier substrate having at least two through vias filled with an electrically conductive material, at least one optoelectronic component arranged on the carrier substrate, wherein the at least one optoelectronic component is configured to generate light in an ultraviolet range, and wherein the at least one optoelectronic component has at least two connection regions, each of which is electrically coupled to one of the two electrically conductive vias and a package material surrounding the at least one optoelectronic component, wherein the package material is based on a fluoropolymer and covers side surfaces of the at least one optoelectronic component at least in regions, and wherein a top surface of the at least one optoelectronic component opposite the connection regions remains free of the package material.

Abstract: The apparatus (1000) includes a housing (110), a chamber (120) disposed in the housing, at least two light emitting diodes (LEDs) (130) disposed within the housing (110), and a user interface (140) disposed on an exterior (112) of the housing. The chamber (120) is adaptable to each of an open, closed, and hermetically sealed configuration. The chamber (120) includes a material transparent to actinic radiation and light from the LEDs (130) enters the chamber from more than one direction. The user interface (140) includes a display (142) and program switches (144) configured to adjust at least three operational parameters of the apparatus. The apparatus (1000) further includes a vacuum pump (150) operatively coupled to the chamber (120). The system includes the apparatus (1000) and an article (180). An article includes layers of at least one photopolymerized crosslinked composition and a low extractable component content.

Abstract: An optoelectronic semiconductor element includes a semiconductor chip for generating electromagnetic radiation. The chip includes: a radiation decoupling surface through which first electromagnetic radiation is emitted in a first wavelength range during operation and a conversion layer which is disposed directly on the radiation decoupling surface of the semiconductor chip. The conversion layer completely covers the radiation decoupling surface and has a main surface which is opposite the radiation decoupling surface. The conversion layer includes at least one luminescent substance which is designed to convert at least a portion the of first electromagnetic radiation into second electromagnetic radiation of a second wavelength range, wherein the second wavelength range is different from the first wavelength range. An optical feedback element is disposed directly on the main surface of the conversion layer and is designed to reflect at least a portion of the first and/or the second electromagnetic radiation.

Abstract: The tray includes a base, the base including first sidewalls that are substantially cylindrically shaped, a first upper surface on an upper end of the base, a dome, the dome extending upwardly and away from the first upper surface, the first upper surface and the dome closing the upper end, a first brim, the first brim radially extending from a first lower end of the base.

Abstract: An electronic device and a manufacturing method thereof. As non-limiting examples, various aspects of this disclosure provide an electronic device having a top side pin array, for example which may be utilized for three-dimensional stacking, and a method for manufacturing such an electronic device.

Abstract: A component comprising a plurality of semiconductor chips and a carrier is disclosed, wherein the carrier has a common metallic carrier layer with a mounting surface on which the semiconductor chips are arranged. The semiconductor chips are thermally but not electrically conductively connected to the common metallic carrier layer. The carrier has a plurality of contact layers, which are arranged next to one another and next to the common carrier layer in lateral directions and are configured for electrically contacting the component and thus for electrically contacting the semiconductor chips. The carrier has an electrically insulating housing material which holds the common metallic carrier layer and the contact layers together, wherein the common metallic carrier layer and the contact layers are adjacent to the housing material and are electrically insulated from one another by the electrically insulating housing material.

Abstract: In an embodiment an optoelectronic component includes at least one semiconductor component configured to emit light of a first wavelength through a surface and a converter layer arranged on the surface of the at least one semiconductor component, the converter layer configured to convert the light of the first wavelength into light of a second wavelength, wherein a portion of the converter layer comprises a wavelength-selective mirror for a range of the first wavelength.

Abstract: The tray includes a base, the base including first sidewalls that are substantially cylindrically shaped, a first upper surface on an upper end of the base, a dome, the dome extending upwardly and away from the first upper surface, the first upper surface and the dome closing the upper end, a first brim, the first brim radially extending from a first lower end of the base.

Abstract: The invention relates to an optoelectronic semiconductor layer sequence comprising:—an active layer for generating radiation, and—at least one filter layer configured to at least partially absorb the electromagnetic radiation generated by the active layer of wavelengths smaller than a predetermined cutoff wavelength. The invention also relates to an optoelectronic semiconductor device.

Abstract: A includes A) providing a wafer having a plurality of semiconductor regions for each of the optoelectronic semiconductor chips, B) applying a color conversion layer directly onto the wafer, the color conversion layer being applied continuously over the plurality of the semiconductor regions, C) performing a color correction so that a color conversion strength of the color conversion layer is locally reduced and D) separating the wafer into the semiconductor chips, wherein the steps are performed in the recited order, and wherein the step C) includes one of the following three possibilities: 1) creating a plurality of cracks and/or bubbles within the color conversion layer, 2) delaminating the color conversion layer locally directly from an emission side of the semiconductor regions, or 3) performing a thickness reduction of the color conversion layer from a top surface, wherein the color conversion layer includes at least one intermediate layer, and wherein the intermediate layer is a mirror layer.

Abstract: In an embodiment a method includes providing a coupling element with at least one predefined coupling point, arranging at least one component with a temporary alignment with the predefined coupling point, wherein the component comprises a decoupling point which is approximately aligned with the predefined coupling point of the coupling element, performing an assisted self-alignment of the component with the predefined coupling point, wherein the self-alignment is assisted by utilizing an action of a capillary force on an alignment material which is embedded in the component or attached to the component or by diverting the alignment material, and wherein the decoupling point of the component is moved to the predefined coupling point of the coupling element and adjusted, and permanent fixing of the component to the coupling element after carrying out the assisted self-alignment of the component.

Abstract: In an embodiment an optoelectronic sensor arrangement includes a carrier substrate, an illuminating device, a frequency-selective optical element and a photodetector, wherein the illuminating device and the photodetector form a stacked arrangement on or with the carrier substrate, wherein the frequency-selective optical element is arranged between the illuminating device and the photodetector, wherein the photodetector is arranged in a cavity of the carrier substrate which is covered by the illuminating device and/or the frequency-selective optical element, and wherein the frequency-selective optical element includes a divider mirror and an optical filter.

Abstract: In embodiments, an optoelectronic lighting device includes at least one optoelectronic light source configured to generate light, at least one converter configured to generate converted light by converting the light and a thermally conductive substrate, wherein the converter is arranged on the substrate and the light source is arranged above the converter, wherein a mirror coating is arranged on a side of the light source facing away from the converter, wherein the mirror coating is configured to be transparent for the converted light and/or to reflect the light, wherein an upper side of the substrate, on which the converter is arranged, comprises a flat region and a rising region adjoining the flat region, and wherein the converter is located at least on the rising region.

Abstract: The disclosure relates to a halogen lamp replacement, in particular for car headlights, having a carrier plate which is covered on both main surfaces by structured electrically conductive layers, to which at least one respective light-emitting component, in particular at least one respective light-emitting-diode chip, is attached, the carrier plate being designed to dissipate heat generated by the light-emitting components to a heat sink formed by a coupling structure.

Abstract: An audio encoder is disclosed for providing an encoded representation of an audio information encodes a sequence of audio frames. The audio encoder provides one or more immediate playout frames including a representation of a current audio frame, preceding the current audio frame. The audio encoder provides the representations of the current frame and of the one or more audio frames preceding the current audio frame, such that these representations are decodable using a same decoder configuration. The audio encoder provides the representations of the one or more audio frames preceding the current audio frame, which are included into the immediate playout frame, using a modified encoding functionality, which encodes an audio frame using a smaller number of bits than a normal encoding functionality, which is used for the encoding of the current audio frame.

Abstract: In an example embodiment, a pack for tobacco articles comprises an inner sleeve, and an outer box comprising front and back covers that allow access to the inner sleeve when the outer box is opened. The inner sleeve can include a front connecting panel pivotally connecting a front wall of the inner sleeve to an inner surface of the front cover and a back connecting panel pivotally connecting a back wall of the inner sleeve to an inner surface of the back cover. A slot in the outer box is configured to allow opening of the outer box by applying pressure against a bottom wall of the inner sleeve.

Abstract: A method for producing an optoelectronic component comprises steps for providing a lead frame, which has a front side and a back side; for forming an inner shaped body, a first portion of the lead frame being embedded in the inner shaped body and a second portion of the lead frame not being embedded in the inner shaped body; for placing an optoelectronic semiconductor chip onto the inner shaped body on the front side of the lead frame; for bending the lead frame such that the first portion of the lead frame is angled with respect to the second portion of the lead frame; and for embedding the lead frame and the inner shaped body in an outer shaped body such that electromagnetic radiation emitted by the optoelectronic semiconductor chip runs through the outer shaped body.

Abstract: Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

Abstract: An optoelectronic component (1) is specified, with at least one radiation-emitting semiconductor chip generating electromagnetic radiation during operation, a coating surrounding the at least one semiconductor chip in lateral directions, a magnetic structure covered by the coating, wherein the magnetic structure enables the component to be identified. Furthermore, a process for the manufacture of such an optoelectronic component is given.

Abstract: A projection apparatus includes a light source for emitting light with an initial spectral distribution, an optical element, and a projection surface. The optical element is arranged in a beam path of light emitted from the light source between the light source and the projection surface. The optical element includes a number of pixels. The pixels of the optical element are each configured to convert light with the initial spectral distribution into light with a predetermined final spectral distribution different from the initial spectral distribution.